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    Method of forming resist patterns and method of producing semiconductor device
    6.
    发明申请
    Method of forming resist patterns and method of producing semiconductor device 审中-公开
    形成抗蚀剂图案的方法和制造半导体器件的方法

    公开(公告)号：US20040241596A1

    公开(公告)日：2004-12-02

    申请号：US10838401

    申请日：2004-05-04

    Inventor： Yuko Yamaguchi ,  Atsushi Someya ,  Hiroshi Kagotani ,  Kenichi Oyama ,  Ryoji Watanabe

    IPC: G03F007/20

    CPC classification number: G03F7/2026 ,  G03F1/32 ,  G03F7/2022

    Abstract: A method of forming resist patterns able to decrease development defects caused by deposition of a resist film or redeposition of semi-insolubles in a development process and rinse process using general systems, and a method of producing a semiconductor device using the same, having lithographic process for exposing an element formation region of the resist film at the optimal exposure amount able to develop the resist film via a mask and exposing the circumference region other than the element formation region at an exposure amount not exceeding that exposure amount able to develop the resist film, due to these exposing, reducing the difference of developability and thickness after development of the resist film by which the resist patterns are formed, reducing the difference of surface conditions in the element formation region and circumference region, and able to smoothly remove development defects formed at the time of rinsing or by high speed rotation.

    Abstract translation: 一种形成抗蚀剂图案的方法，该方法能够减少由于沉积抗蚀剂膜所引起的显影缺陷或在显影过程中的再沉积和使用一般系统的漂洗工艺，以及使用其制造具有光刻工艺的半导体器件的方法 用于以能够通过掩模显影抗蚀剂膜的最佳曝光量曝光抗蚀剂膜的元件形成区域，并且以不超过能够显影抗蚀剂膜的曝光量的曝光量曝光元件形成区域以外的周边区域 由于这些曝光，减少形成抗蚀剂图案的抗蚀剂膜显影后的显影性和厚度的差异，减少了元件形成区域和周边区域中的表面状况的差异，并且能够平滑地除去形成的显影缺陷 在冲洗时或通过高速旋转。

    Method for exposing a peripheral area of a wafer and apparatus for performing the same
    7.
    发明授权
    Method for exposing a peripheral area of a wafer and apparatus for performing the same 失效

    公开(公告)号：US06795162B2

    公开(公告)日：2004-09-21

    申请号：US10090807

    申请日：2002-03-06

    Applicant: Hyung-Sik Hong ,  Dong-Wha Shin ,  Byung-Ho Min ,  Jae-Hong Choi

    Inventor： Hyung-Sik Hong ,  Dong-Wha Shin ,  Byung-Ho Min ,  Jae-Hong Choi

    IPC: G03B2742

    CPC classification number: G03F7/2026

    Abstract: A method and an apparatus for precisely exposing a predetermined width of a peripheral area of a wafer coated with a layer of photoresist material with light from a light source, wherein the wafer is moved when the light is radiated onto the wafer to expose the photoresist layer at the peripheral area of the wafer, an inspection section inspecting whether the light is radiated onto a precise position of the peripheral area of the wafer, whereby by adjusting the position of the light source if the light is not radiated at the precise position of the peripheral area of the wafer requiring exposure while inspecting the light radiated onto the peripheral area of the wafer, the predetermined width of the peripheral area of the wafer is precisely exposed.

    Microdevice and structural components of the same
    8.
    发明授权
    Microdevice and structural components of the same 失效
    微设备和结构部件相同

    公开(公告)号：US06636294B2

    公开(公告)日：2003-10-21

    申请号：US09383641

    申请日：1999-08-26

    Applicant: Tetsunobu Kochi

    Inventor： Tetsunobu Kochi

    IPC: G03B2118

    CPC classification number: G03F7/2026 ,  G03F1/30 ,  G03F1/70 ,  G03F7/70408 ,  G03F7/70466

    Abstract: A device having a substrate and a pattern structure formed on the substrate in accordance with plural processes including a multiple exposure process having (i) a step for photoprinting a fine stripe pattern on the substrate and (ii) a step for photoprinting a predetermined mask pattern on the substrate, such that the fine stripe pattern and the mask pattern are printed superposedly, wherein, in the pattern structure, a particular structural portion of the device is disposed in a portion where the fine stripe pattern and the mask pattern are printed superposedly.

    Abstract translation: 一种具有基板和图案结构的装置，根据包括多次曝光工艺的多种工艺在基板上形成的图案结构，所述多次曝光工艺具有（i）用于在基板上对微细图案进行照相印刷的步骤，以及（ii）用于对预定掩模图案进行照相印刷的步骤 在基板上，使得细纹图案和掩模图案被重叠地打印，其中在图案结构中，装置的特定结构部分设置在重叠地印刷细条纹图案和掩模图案的部分中。

    Mask repair in resist image
    9.
    发明授权
    Mask repair in resist image 有权
    抗蚀剂图像中的面膜修复

    公开(公告)号：US06627358B1

    公开(公告)日：2003-09-30

    申请号：US09838514

    申请日：2001-04-20

    Applicant: Burn J. Lin

    Inventor： Burn J. Lin

    IPC: G03P900

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/26 ,  G03F1/72 ,  G03F7/2026

    Abstract: A method of producing defect free resist images from defective phase shifting or extreme ultraviolet masks is described. The method uses supplemental radiation to achieve direct repair of the resist image. Pinhole type of defects in opaque pattern elements, which would cause overexposed regions of resist and can readily be repaired on the mask, are first repaired directly on the mask before the mask is used in the exposure of a layer of resist. The remaining defects on the mask are left as they are and not repaired. The layer of resist is then exposed using the partially repaired mask. The remaining mask defects will cause unexposed latent images in the layer of resist. These unexposed regions of the resist are then exposed using supplemental radiation thereby correcting the exposure of the layer of resist. The layer of resist is then developed to form a defect free resist image.

    Abstract translation: 描述了从缺陷相移或极紫外线掩模产生无缺陷抗蚀剂图像的方法。 该方法使用补充辐射来实现抗蚀剂图像的直接修复。 首先在掩模用于曝光抗蚀剂层之前，直接在掩模上修复不透明图案元件中的针孔类型，其将导致抗蚀剂的过度曝光区域并且可以容易地在掩模上修复。 面罩上的剩余缺陷保留原样，未修复。 然后使用部分修复的面罩曝光抗蚀剂层。 剩余的掩模缺陷将导致抗蚀剂层中未曝光的潜像。 然后使用补充辐射曝光抗蚀剂的这些未曝光区域，从而校正抗蚀剂层的曝光。 然后将抗蚀剂层显影以形成无缺陷抗蚀剂图像。

    Trimming mask with semitransparent phase-shifting regions
    10.
    发明授权
    Trimming mask with semitransparent phase-shifting regions 有权
    具有半透明相移区域的修整面罩

    公开(公告)号：US06466373B1

    公开(公告)日：2002-10-15

    申请号：US09677321

    申请日：2000-09-29

    Applicant: Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

    Inventor： Rainer Pforr ,  Christoph Friedrich ,  Klaus Ergenzinger ,  Fritz Gans ,  Uwe Griesinger ,  Wilhelm Maurer ,  Jürgen Knobloch

    IPC: G02B2700

    CPC classification number: G03F1/29 ,  G03F1/32 ,  G03F1/34 ,  G03F1/70 ,  G03F7/2026 ,  G03F7/70466

    Abstract: For lithographically producing the smallest structures at less than the exposure wavelengths in semiconductor fabrication, a double exposure is carried out using a thick phase mask and a trimming mask, the trimming mask further structures the phase-contrast lines produced by the phase mask. Besides transparent or opaque regions, the trimming mask also has phase-shifting regions. These surround transparent regions of the trimming mask through which the phase-contrast lines produced by the first mask are locally re-exposed, that is to say interrupted. The intensity profile of successive line sections is especially rich in contrast through the addition of the phase-shifting partially transparent regions on the second mask; the distances between the line sections can be reduced. The trimming mask, otherwise used only for larger structures, is therefore suitable for the configuration of the finest dimensionally critical structures.

    Abstract translation: 为了在半导体制造中以小于曝光波长的方式平版印刷产生最小结构，使用厚相位掩模和修剪掩模进行双重曝光，修整掩模进一步构成由相位掩模产生的相位对比线。 除了透明或不透明区域之外，修整掩模还具有相移区域。 这些环绕着修整掩模的透明区域，由第一掩模产生的相位对应线通过该区域被局部再暴露，也就是说被中断。 通过在第二掩模上添加相移部分透明区域，连续线段的强度分布特别丰富; 可以减少线路部分之间的距离。 因此，修剪面罩，否则仅用于较大的结构，因此适用于最精细的尺寸关键结构的构造。

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