公开(公告)号：US20100266939A1

公开(公告)日：2010-10-21

申请号：US12761876

申请日：2010-04-16

Applicant: Haiko Rolff ,  Carla Byloos ,  Christoph Noelscher ,  Nicolo Morgana ,  Roderick Koehle ,  Molela Moukara ,  Ralf Neubauer ,  Rainer Pforr ,  Dominique Savignac

Inventor： Haiko Rolff ,  Carla Byloos ,  Christoph Noelscher ,  Nicolo Morgana ,  Roderick Koehle ,  Molela Moukara ,  Ralf Neubauer ,  Rainer Pforr ,  Dominique Savignac

IPC: G03F1/00

CPC classification number: G03F1/40 ,  G03F1/26 ,  G03F1/30 ,  G03F1/32

Abstract: A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.

Abstract translation: 平版印刷掩模包括包括凹槽的第一层，包含区域的第二层和包围区段的凹槽状结构。 形成第一层和第二层以便减小第二层内的电位差。 形成光刻掩模的方法包括形成第一层和第二层以将第二层设置在第一层上，将第二层图案化以包括封闭这些区段的区段，区域和沟槽状结构，以及在第一层中形成凹槽 层在未被第二层覆盖的部分。 形成第一层和第二层，以在形成第一层中的槽的步骤期间减小第二层内的电位差。

公开(公告)号：US20080304029A1

公开(公告)日：2008-12-11

申请号：US11760295

申请日：2007-06-08

Applicant: Rainer Pforr ,  Thorsten Winkler ,  Ralf Ziebold ,  Wolfram Kostler ,  Jens Reichelt ,  Stefan Blawid ,  Sebastian Champigny ,  Manuel Vorwerk

Inventor： Rainer Pforr ,  Thorsten Winkler ,  Ralf Ziebold ,  Wolfram Kostler ,  Jens Reichelt ,  Stefan Blawid ,  Sebastian Champigny ,  Manuel Vorwerk

IPC: G03B27/14

CPC classification number: G03F7/705 ,  G03F1/36

Abstract: In a method of adjusting an optical parameter of an exposure apparatus, a photolithographic projection is performed using an exposure apparatus and using a layout pattern so as to provide measured layout data with different focus settings of the exposure apparatus. An optical model is provided including at least one optical parameter and a simulated image is created by using the optical model and the layout pattern. The optical model is optimized by modifying the optical parameter.

Abstract translation: 在调整曝光装置的光学参数的方法中，使用曝光装置进行光刻投影并使用布局图案，以便提供具有不同曝光装置的焦点设置的测量的布局数据。 提供了包括至少一个光学参数的光学模型，并且通过使用光学模型和布局图案来创建模拟图像。 通过修改光学参数优化光学模型。

公开(公告)号：US07425396B2

公开(公告)日：2008-09-16

申请号：US10952885

申请日：2004-09-30

Applicant: Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

Inventor： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

IPC: G03C5/00 ,  G03F9/00

CPC classification number: G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

Abstract: A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

Abstract translation: 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。

公开(公告)号：US07393613B2

公开(公告)日：2008-07-01

申请号：US10791763

申请日：2004-03-04

Applicant: Wolfgang Dettmann ,  Jörg Thiele ,  Rainer Pforr ,  Mario Hennig ,  Karsten Zeiler

Inventor： Wolfgang Dettmann ,  Jörg Thiele ,  Rainer Pforr ,  Mario Hennig ,  Karsten Zeiler

IPC: G03F1/00 ,  G03F1/14

CPC classification number: G03F7/705 ,  G03F1/70 ,  G03F7/70466

Abstract: A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

Abstract translation: 一组至少两个掩模，用于将结构图案的投影彼此配合到设置在半导体晶片上的相同感光层中。 第一掩模包括半透明或不透明的第一层，其布置在第一基板上，并且其中至少一个第一开口形成在第一位置，第一开口具有第一横向尺寸，该第一横向尺寸大于 用于投影结构图案的投影系统。 第二掩模包括半透明或不透明的第二层，其布置在第二基板上，并且其中在第二位置处形成分配给第一开口的至少一个虚拟结构，该虚拟结构具有第二横向尺寸，该第二横向尺寸较小 比投影系统的分辨率极限，其中第一掩模上的第一位置对应于第二掩模上的第二位置。

公开(公告)号：US20060181691A1

公开(公告)日：2006-08-17

申请号：US11339844

申请日：2006-01-26

Applicant: Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

Inventor： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

IPC: G03B27/54

CPC classification number: G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

Abstract translation: 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。

公开(公告)号：US06635388B1

公开(公告)日：2003-10-21

申请号：US09429837

申请日：1999-10-29

Applicant: Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

Inventor： Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

IPC: G03F900

CPC classification number: G03F1/34 ,  G03F7/2022

Abstract: The invention relates to a phase shift mask for lithographically producing small structures at the limit of a resolution that is predetermined by the wavelength of the exposure radiation. The phase shift mask has first regions A and second regions B that effect a phase-shift relative to the first regions. The second regions are arranged beside the first regions for producing a sudden phase shift along the boundaries between the first and the second regions. Individual first regions touch one another via corners at points, at which the second regions also touch one another via corners. The result is that the boundaries between first and second regions merge at these points and these points are opaque to the radiation. The invention makes it possible to expose extremely small contact holes with just a single exposure and thus leads to a reduction of costs in the fabrication of integrated semiconductor circuits.

Abstract translation: 本发明涉及一种用于光刻产生在由曝光辐射的波长预定的分辨率极限处的小结构的相移掩模。 相移掩模具有相对于第一区域进行相移的第一区域A和第二区域B. 第二区域布置在第一区域旁边，用于沿着第一和第二区域之间的边界产生突然的相移。 单个第一区域通过角点彼此接触，在第二区域也通过拐角彼此接触。 结果是第一和第二区域之间的边界在这些点处合并，并且这些点对辐射是不透明的。 本发明使得可以仅用一次曝光来暴露极小的接触孔，从而导致集成半导体电路的制造成本的降低。

公开(公告)号：US5624773A

公开(公告)日：1997-04-29

申请号：US325286

申请日：1994-12-21

Applicant: Rainer Pforr ,  Kurt G. M. Ronse ,  Rik M. E. Jonckheere ,  Luc M. M. L. Van Den Hove

Inventor： Rainer Pforr ,  Kurt G. M. Ronse ,  Rik M. E. Jonckheere ,  Luc M. M. L. Van Den Hove

IPC: G03F1/00 ,  G03F1/26 ,  G03F1/38 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC classification number: G03F7/70191 ,  G03F1/26 ,  G03F1/50 ,  G03F7/70108 ,  G03F7/70125

Abstract: In an optical projection system for use in projection printing of masks to wafers, comprising an illumination system including a light source and a mask positioned in the optical path of the illumination system, an optical phase structure is positioned in the optical path between the light source and the mask. The phase structure comprises a pattern of distributed transparent features having at least one refractive index, the transparent features of said phase structure being related in position and orientation to the opaque features of the mask.

Abstract translation: PCT No.PCT / BE93 / 00009 Sec。 371日期1994年12月21日 102（e）日期1994年12月21日PCT提交1993年2月23日PCT公布。 公开号WO94 / 19723 日期1994年9月1日在用于向晶片投影印刷掩模的光学投影系统中，包括照明系统，其包括位于照明系统的光路中的光源和掩模，光学相位结构位于光学 光源和掩模之间的路径。 相位结构包括具有至少一个折射率的分布式透明特征的图案，所述相位结构的透明特征在位置和方向上与掩模的不透明特征相关。

公开(公告)号：US08293431B2

公开(公告)日：2012-10-23

申请号：US12761876

申请日：2010-04-16

Applicant: Haiko Rolff ,  Carla Byloos ,  Christoph Noelscher ,  Nicolo Morgana ,  Roderick Koehle ,  Molela Moukara ,  Ralf Neubauer ,  Rainer Pforr ,  Dominique Savignac

Inventor： Haiko Rolff ,  Carla Byloos ,  Christoph Noelscher ,  Nicolo Morgana ,  Roderick Koehle ,  Molela Moukara ,  Ralf Neubauer ,  Rainer Pforr ,  Dominique Savignac

IPC: G03F1/40

CPC classification number: G03F1/40 ,  G03F1/26 ,  G03F1/30 ,  G03F1/32

Abstract: A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.

Abstract translation: 平版印刷掩模包括包括凹槽的第一层，包含区域的第二层和包围区段的凹槽状结构。 形成第一层和第二层以便减小第二层内的电位差。 形成光刻掩模的方法包括形成第一层和第二层以将第二层设置在第一层上，将第二层图案化以包括封闭这些区段的区段，区域和沟槽状结构，以及在第一层中形成凹槽 层在未被第二层覆盖的部分。 形成第一层和第二层，以在形成第一层中的槽的步骤期间减小第二层内的电位差。

公开(公告)号：US07855776B2

公开(公告)日：2010-12-21

申请号：US12056060

申请日：2008-03-26

Applicant: Bernd Kuechler ,  Rainer Pforr ,  Thomas Muelders

Inventor： Bernd Kuechler ,  Rainer Pforr ,  Thomas Muelders

IPC: G03B27/68

CPC classification number: G03F7/70891 ,  G03F1/36 ,  G03F1/50 ,  G03F7/70433

Abstract: Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.

Abstract translation: 实施例涉及补偿透镜加热，光刻投影系统和光掩模。 因此，通过提供包括在第一区域中基本对称布置的规则图案和包括多个子分辨率结构元件的子分辨率图案的布局图案来补偿透镜加热，其中在第二区域中的子分辨率图案， 以便在光刻投影的情况下使投影装置的非均匀透镜加热最小化。

公开(公告)号：US07644389B2

公开(公告)日：2010-01-05

申请号：US11668565

申请日：2007-01-30

Applicant: Mario Hennig ,  Rainer Pforr ,  Gerd Unger

Inventor： Mario Hennig ,  Rainer Pforr ,  Gerd Unger

IPC: G06F17/50 ,  G03F1/00 ,  G03C5/00

CPC classification number: G03F7/70191 ,  G03F1/00

Abstract: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

Abstract translation: 布局被分解为部分图案。 为每个部分图案绘制中间掩模。 中间掩模在掩模步进器或扫描仪中逐渐用于投影到测试掩模上的共同图案中。 从测试掩模或使用掩模曝光的测试晶片确定线宽度分布LB（x，y），并将其转换成剂量校正的分布。 基于所计算的剂量校正来适应各个中间掩模的传输T（x，y）。 这可以使用分配给中间掩模并具有阴影结构元件的附加光学元件，或者通过激光引起的中间掩模本身的石英衬底中的遮光元件的后侧引入来实现。