公开(公告)号：US06680478B2

公开(公告)日：2004-01-20

申请号：US10021011

申请日：2001-12-19

申请人： Huey-Liang Hwang ,  Yeu-Long Jiang ,  Klaus Yung-Jane Hsu ,  Cho-Jen Tsai

发明人： Huey-Liang Hwang ,  Yeu-Long Jiang ,  Klaus Yung-Jane Hsu ,  Cho-Jen Tsai

IPC分类号： G01J520

CPC分类号： H01L31/1055 ,  H01L31/11

摘要： Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the I1 and I2 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.

摘要翻译： 制造非晶硅/非晶硅锗NI1PI2N位置检测器以抑制可见光并增加红外光的检测。 I1层的材料是用于吸收可见光的非晶硅或非晶硅锗，I2层的材料是用于吸收红外光的非晶硅锗或无定形锗。 当NI1P二极管正向偏置且P12N二极管反向偏置时，可以获得由于吸收可见光而导致的信号抑制和由于吸收红外光而引起的信号放大。 可以通过Si / Ge原子比来控制I1和I2层的光学带隙。 可以通过控制I1和I2层的厚度和光学带隙来调节对可见光的抑制和红外光的增强检测。 可以通过13.56MHz的方波调制沉积非晶硅和非晶硅锗层。