公开(公告)号：US06267501B1

公开(公告)日：2001-07-31

申请号：US09283274

申请日：1999-04-01

申请人： Martin A. Wand ,  Kenneth Rachels ,  John F. Brady ,  Michael Weinstein ,  David D. Ratcliff

发明人： Martin A. Wand ,  Kenneth Rachels ,  John F. Brady ,  Michael Weinstein ,  David D. Ratcliff

IPC分类号： G01J520

CPC分类号： H04N5/2178 ,  G01J5/20

摘要： A method for measuring the temperature of a scene using a detector having at least one reference pixel, with an integratable sampling circuit associated with each pixel. Initially, an ambient reference temperature is observed with the reference pixel(s) to provide a parameter, generally voltage, indicative of that temperature to provide a constant voltage output indicating that temperature by varying the sampling circuit integration time. Each non-reference pixel is exposed to different scene and ambient temperatures and the integration time for each set of data for each pixel is recorded. For each pixel, an equation is provided relating integration time to pixel voltage when the ambient temperature and the scene temperature are the same to correct for offsets and an equation is provided relating integration time and offset corrected pixel value to the difference between the ambient temperature and the scene temperature when the ambient temperature and scene temperature differ for correction of responsivity. An equation is provided relating integration time to ambient temperature for calculating ambient temperature. The voltage level for each of the pixels and the integration is determined, the offset correction for each pixel is calculated based upon the integration time and the offset correction is applied to the pixel value for each pixel. The responsivity corrected value is calculated for each pixel based upon the integration time and the offset corrected pixel value. The ambient temperature is calculated based upon the integration time and the temperature difference between the ambient temperature and the scene temperature for each pixel which is calculated based upon the responsivity corrected pixel value using a scale factor determined during calibration. The ambient temperature and the difference between the ambient and the scene temperatures are added to obtain the actual scene temperature.

摘要翻译： 一种使用具有至少一个参考像素的检测器来测量场景的温度的方法，具有与每个像素相关联的可积分采样电路。 首先，利用参考像素观察环境参考温度，以提供指示该温度的参数，通常是电压，以通过改变采样电路积分时间来提供指示温度的恒定电压输出。 每个非参考像素暴露于不同的场景和环境温度，并记录每个像素的每组数据的积分时间。 对于每个像素，当环境温度和场景温度相同以提供偏移量时，提供了与像素电压相关的积分时间的等式，并且提供了将积分时间和偏移校正像素值与环境温度和 当环境温度和场景温度不同时，对场景温度进行校正。 提供了一个方程式，将积分时间与环境温度相关，以计算环境温度。 确定每个像素和积分的电压电平，基于积分时间计算每个像素的偏移校正，并且将偏移校正应用于每个像素的像素值。 基于积分时间和偏移校正像素值，针对每个像素计算响应度校正值。 基于积分时间和基于使用在校准期间确定的比例因子的响应度校正像素值计算的每个像素的环境温度和场景温度之间的温度差来计算环境温度。 添加环境温度和环境温度与场景温度之间的差异，以获得实际场景温度。

公开(公告)号：US06806470B2

公开(公告)日：2004-10-19

申请号：US10108391

申请日：2002-03-29

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J520

CPC分类号： G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/16

摘要： A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

摘要翻译： 一种用于支撑在半导体衬底上的腔中的支撑束线，包括用于吸收入射红外线并将其转换成热的红外吸收部分的红外检测像素和用于转换由热量引起的温度变化的热电转换部分 在红外线吸收部分中产生的电信号由与外围电路中使用的镶嵌金属栅极MOS晶体管的栅极相同的一层上的镶嵌金属形成。 支撑梁线包括具有U形横截面的导体线，其中填充有金属。

公开(公告)号：US06680478B2

公开(公告)日：2004-01-20

申请号：US10021011

申请日：2001-12-19

申请人： Huey-Liang Hwang ,  Yeu-Long Jiang ,  Klaus Yung-Jane Hsu ,  Cho-Jen Tsai

发明人： Huey-Liang Hwang ,  Yeu-Long Jiang ,  Klaus Yung-Jane Hsu ,  Cho-Jen Tsai

IPC分类号： G01J520

CPC分类号： H01L31/1055 ,  H01L31/11

摘要： Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the I1 and I2 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.

摘要翻译： 制造非晶硅/非晶硅锗NI1PI2N位置检测器以抑制可见光并增加红外光的检测。 I1层的材料是用于吸收可见光的非晶硅或非晶硅锗，I2层的材料是用于吸收红外光的非晶硅锗或无定形锗。 当NI1P二极管正向偏置且P12N二极管反向偏置时，可以获得由于吸收可见光而导致的信号抑制和由于吸收红外光而引起的信号放大。 可以通过Si / Ge原子比来控制I1和I2层的光学带隙。 可以通过控制I1和I2层的厚度和光学带隙来调节对可见光的抑制和红外光的增强检测。 可以通过13.56MHz的方波调制沉积非晶硅和非晶硅锗层。

公开(公告)号：US06410917B1

公开(公告)日：2002-06-25

申请号：US09677651

申请日：2000-10-03

申请人： Kwong-Kit Choi

发明人： Kwong-Kit Choi

IPC分类号： G01J520

CPC分类号： H01L27/14601 ,  G01J4/04 ,  G01J5/20 ,  H01L27/1465

摘要： A polarization-sensitive infrared (IR) detector array for use in infrared cameras and other IR based instruments, is comprised of multiple corrugated quantum well infrared photodetector elements (C-QWIP) that form a unitary detector unit (cell). The array is preferably two-dimensional, which can detect polarization contrast of an observed object in a scene. Each detector unit (cell) is formed by a group of C-QWIP detector elements having different groove orientations and cross sections. Each detector unit (cell) has at least two C-QWIP detector elements with their respective corrugations orthogonally oriented. Infrared detection by these detector cells is primarily by polarization contrast, compared to intensity contrast, which is well known in the art. By measuring polarization of reflected light from the observed object, the type of material can also be identified. A first array embodiment of the invention comprises four C-QWIP elements that form a cell. The second array embodiment of the invention comprises a detector having two C-QWIPs to form a detector cell.

摘要翻译： 用于红外相机和其他基于IR的仪器的偏振敏感红外（IR）检测器阵列由多个波纹量子阱红外光电探测器元件（C-QWIP）组成，其形成一体的检测器单元（单元）。 阵列优选是二维的，其可以检测场景中被观察物体的偏振对比度。 每个检测器单元（单元）由具有不同凹槽取向和横截面的一组C-QWIP检测器元件形成。 每个检测器单元（单元）具有至少两个C-QWIP检测器元件，其各自的波形正交定向。 这些检测器单元的红外检测主要是通过偏振对比度，与本领域公知的强度对比相比。 通过测量来自观察对象的反射光的偏振，还可以识别材料的类型。 本发明的第一阵列实施例包括形成单元的四个C-QWIP元件。 本发明的第二阵列实施例包括具有两个C-QWIP以形成检测器单元的检测器。

公开(公告)号：US06573504B2

公开(公告)日：2003-06-03

申请号：US09819596

申请日：2001-03-29

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J520

CPC分类号： H01L31/103 ,  G01J5/10 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683 ,  H01L31/024 ,  H01L31/035281 ,  Y02E10/50

摘要： An object of the present invention is to provide a high-sensitivity infrared sensor. According to the present invention, a support member for supporting a sensor portion in a cavity structure is formed to be remarkably thin as compared with a conventional structure, a sectional area of the support member is considerably reduced, heat conductance can remarkably be reduced and, as a result, the infrared sensor having a remarkably high sensitivity can be obtained. Moreover, according to the present invention, since an insulating layer of a support member area is etched, and a sacrifice silicon film is embedded in the area, an aspect ratio of an insulating layer RIE for forming a support leg is remarkably reduced. A manufacturing process is facilitated, a sectional area of the support leg is further reduced as a secondary effect, and the sensitivity of the infrared sensor can further be enhanced.

摘要翻译： 本发明的目的是提供一种高灵敏度红外传感器。 根据本发明，与传统结构相比，用于支撑腔结构中的传感器部分的支撑构件形成为非常薄，支撑构件的截面积显着减小，导热性可以显着降低， 结果，可以获得具有非常高的灵敏度的红外线传感器。 此外，根据本发明，由于蚀刻了支撑构件区域的绝缘层，并且在该区域中埋设牺牲硅膜，所以用于形成支撑腿的绝缘层RIE的纵横比显着降低。 便于制造过程，作为副作用，支撑腿的截面积进一步减小，并且可以进一步提高红外线传感器的灵敏度。

公开(公告)号：US06512229B2

公开(公告)日：2003-01-28

申请号：US09799001

申请日：2001-03-06

申请人： Tokuhito Sasaki

发明人： Tokuhito Sasaki

IPC分类号： G01J520

CPC分类号： C30B23/02 ,  C30B23/002 ,  C30B29/16

摘要： Crystal phase V2O3 with x=1.5 in VOx is prepared. Such a lower specific resistance than a desired one as a starting film quality is modified to the final desired specific resistance by heating under an oxidizing atmosphere. A protective film for a bolometer material is formed by physical vapor deposition.

摘要翻译： 制备VO x中x = 1.5的晶相V 2 O 3。 通过在氧化气氛下加热，比作为起始膜质量的所需要的这种较低的电阻率被修饰为最终期望的电阻率。 通过物理气相沉积形成测辐射热量计材料的保护膜。

公开(公告)号：US06483111B1

公开(公告)日：2002-11-19

申请号：US09394095

申请日：1999-09-13

申请人： Tomohiro Ishikawa ,  Masafumi Kimata

发明人： Tomohiro Ishikawa ,  Masafumi Kimata

IPC分类号： G01J520

CPC分类号： H01L27/14649 ,  G01J5/20 ,  H01L27/14689

摘要： A thermal infrared-detector array has semiconductor-junction elements as detectors. It has high sensitivity and low noise and is fabricated in semiconductor-fabrication process. The semiconductor-junction elements are located in a monocrystalline silicon layer overlying a silicon-oxide layer on a monocrystalline silicon substrate. A signal-output circuit reading out signals from the detector elements includes transistors located on the monocrystalline silicon substrate.

摘要翻译： 热红外检测器阵列具有作为检测器的半导体结元件。 它具有高灵敏度和低噪声，并且在半导体制造工艺中制造。 半导体结元件位于单晶硅衬底上的硅氧化物层上的单晶硅层中。 从检测器元件读出信号的信号输出电路包括位于单晶硅衬底上的晶体管。

公开(公告)号：US06339220B1

公开(公告)日：2002-01-15

申请号：US09040569

申请日：1998-03-18

申请人： Naoki Oda

发明人： Naoki Oda

IPC分类号： G01J520

CPC分类号： H01L31/09 ,  G01J5/20

摘要： A thermal infrared detecting device includes a lower layer portion having a readout circuit, and an upper layer portion having a bolometer thin film covered with an insulating protective film to perform heat/resistance conversion. The upper layer portion and the lower layer portion are spaced apart from each other while sandwiching a vacuum or sealed gas to form a thermal isolation structure, and also electrically connected to each other through an electrode film formed on the insulating protective film or in the insulating protective film. The bolometer thin film also serves as an infrared absorption film.

摘要翻译： 热红外线检测装置包括具有读出电路的下层部分和具有覆盖有绝缘保护膜的测辐射热计薄膜以进行热/电阻转换的上层部分。 上层部分和下层部分彼此间隔开，同时夹住真空或密封气体以形成热隔离结构，并且还通过形成在绝缘保护膜上的电极膜或绝缘保护膜中的电极膜彼此电连接 保护膜。 测辐射热计薄膜还用作红外吸收膜。

公开(公告)号：US06294787B1

公开(公告)日：2001-09-25

申请号：US09133802

申请日：1998-08-13

申请人： Jörg Schieferdecker ,  Marion Simon ,  Karlheinz Storck ,  Manfred Rothley ,  Erich Zabler ,  Rolf Jähne

发明人： Jörg Schieferdecker ,  Marion Simon ,  Karlheinz Storck ,  Manfred Rothley ,  Erich Zabler ,  Rolf Jähne

IPC分类号： G01J520

CPC分类号： B81C99/0045 ,  G01J5/02 ,  G01J5/026 ,  G01J5/061 ,  G01J5/10 ,  G01J5/12 ,  G01J5/22 ,  G01J2005/068

摘要： Presented is a sensor system for the detection of thermal radiation, with a substrate (15) and several sensor elements (10) on the substrate (15), in which case at least one self-test device (53) is provided in order to generate heat which can be used for the heating of one or more sensor elements (10). The sensor elements (10) can be heated according to a typical time pattern during the self-testing process. Also presented is an advantageous process for the manufacture of the sensor system as well as an advantageous configuration of the total system, including signal processing.

摘要翻译： 提出了一种用于检测热辐射的传感器系统，在基板（15）上具有基板（15）和多个传感器元件（10），在这种情况下，提供至少一个自检装置（53），以便 产生可用于加热一个或多个传感器元件（10）的热量。 传感器元件（10）可以在自检过程中根据典型的时间模式进行加热。 还提出了用于制造传感器系统的有利过程以及包括信号处理在内的整个系统的有利配置。

公开(公告)号：US06777682B2

公开(公告)日：2004-08-17

申请号：US10128570

申请日：2002-04-24

申请人： Tomohiro Ishikawa ,  Hirofumi Yagi

发明人： Tomohiro Ishikawa ,  Hirofumi Yagi

IPC分类号： G01J520

CPC分类号： G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/14687

摘要： An infrared detector includes a semiconductor substrate having a hollow, a single crystal silicon thin film opposite the hollow at a distance from the semiconductor substrate, thermoelectric converters embedded in the single crystal silicon thin film and converting heat energy generated by infrared light irradiating the single crystal silicon thin film into an electric signal, a first connecting layer embedded in the single crystal silicon thin film and electrically connecting the thermoelectric converters to each other and a second connecting layer for transmitting the electric signal output by the thermoelectric converters to a wire in the semiconductor substrate. In the infrared detector, at least one of the first and second connecting layers is a silicon compound.

摘要翻译： 红外检测器包括：半导体衬底，具有中空部分，与半导体衬底相距一定距离的中空部分的单晶硅薄膜;嵌入在单晶硅薄膜中的热电转换器，转换由照射单晶的红外光产生的热能; 将硅薄膜变成电信号，将第一连接层嵌入在单晶硅薄膜中并将热电转换器彼此电连接;以及第二连接层，用于将由热电转换器输出的电信号传输到半导体中的导线 基质。 在红外检测器中，第一和第二连接层中的至少一个是硅化合物。