Simulation and correction of mask shadowing effect
    1.
    发明授权
    Simulation and correction of mask shadowing effect 有权
    掩模遮蔽效果的模拟和校正

    公开(公告)号:US08539393B2

    公开(公告)日:2013-09-17

    申请号:US13244070

    申请日:2011-09-23

    CPC classification number: G03F1/22 G03F1/70 G03F7/70433

    Abstract: Disclosed are techniques for simulating and correcting the mask shadowing effect using the domain decomposition method (DDM). According to various implementations of the invention, DDM signals for an extreme ultraviolet (EUV) lithography mask are determined for a plurality of azimuthal angles of illumination. Base on the DDM signals, one or more layout designs for making the mask may be analyzed and/or modified.

    Abstract translation: 公开了使用域分解方法(DDM)来模拟和校正掩模阴影效应的技术。 根据本发明的各种实现方式,针对多个方位角的照明来确定用于极紫外(EUV)光刻掩模的DDM信号。 基于DDM信号,可以分析和/或修改用于制作掩模的一个或多个布局设计。

    Simulation And Correction Of Mask Shadowing Effect
    2.
    发明申请
    Simulation And Correction Of Mask Shadowing Effect 有权
    面罩遮蔽效果的模拟与校正

    公开(公告)号:US20130080982A1

    公开(公告)日:2013-03-28

    申请号:US13244070

    申请日:2011-09-23

    CPC classification number: G03F1/22 G03F1/70 G03F7/70433

    Abstract: Disclosed are techniques for simulating and correcting the mask shadowing effect using the domain decomposition method (DDM). According to various implementations of the invention, DDM signals for an extreme ultraviolet (EUV) lithography mask are determined for a plurality of azimuthal angles of illumination. Base on the DDM signals, one or more layout designs for making the mask may be analyzed and/or modified.

    Abstract translation: 公开了使用域分解方法(DDM)来模拟和校正掩模阴影效应的技术。 根据本发明的各种实现方式,针对多个方位角的照明来确定用于极紫外(EUV)光刻掩模的DDM信号。 基于DDM信号,可以分析和/或修改用于制作掩模的一个或多个布局设计。

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