公开(公告)号：US07255775B2

公开(公告)日：2007-08-14

申请号：US10603781

申请日：2003-06-26

申请人： Masanari Yokogawa ,  Hirotaka Hagihara ,  Shinya Wagatsuma ,  Koutarou Kitayama ,  Chieko Fujiwara

发明人： Masanari Yokogawa ,  Hirotaka Hagihara ,  Shinya Wagatsuma ,  Koutarou Kitayama ,  Chieko Fujiwara

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/6875 ,  H01L21/68757

摘要： There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 μm to 1.3 μm.

摘要翻译： 提供了一种半导体晶片处理构件，其中防止其滑动的发生，并且其具有对半导体晶片的足够的内聚性和优异的耐久性。 本发明的半导体晶片处理元件A至少具有在其上形成有碳化硅（SiC）膜的表面，包括用于接收半导体晶片的支撑部分，所述支撑部分由所述半导体晶片基本上来自 接触; 和由碳化硅（SiC）膜形成的凹陷以提供所述凸起之间的覆盖区域，所述凸起形成为表面粗糙度Ra为0.05μm至1.3μm的顶表面。