公开(公告)号：US07255775B2

公开(公告)日：2007-08-14

申请号：US10603781

申请日：2003-06-26

申请人： Masanari Yokogawa ,  Hirotaka Hagihara ,  Shinya Wagatsuma ,  Koutarou Kitayama ,  Chieko Fujiwara

发明人： Masanari Yokogawa ,  Hirotaka Hagihara ,  Shinya Wagatsuma ,  Koutarou Kitayama ,  Chieko Fujiwara

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/6875 ,  H01L21/68757

摘要： There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 μm to 1.3 μm.

摘要翻译： 提供了一种半导体晶片处理构件，其中防止其滑动的发生，并且其具有对半导体晶片的足够的内聚性和优异的耐久性。 本发明的半导体晶片处理元件A至少具有在其上形成有碳化硅（SiC）膜的表面，包括用于接收半导体晶片的支撑部分，所述支撑部分由所述半导体晶片基本上来自 接触; 和由碳化硅（SiC）膜形成的凹陷以提供所述凸起之间的覆盖区域，所述凸起形成为表面粗糙度Ra为0.05μm至1.3μm的顶表面。

公开(公告)号：US20060065196A1

公开(公告)日：2006-03-30

申请号：US11231938

申请日：2005-09-22

申请人： Masanari Yokogawa

发明人： Masanari Yokogawa

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4581 ,  C23C16/4584 ,  C30B25/12 ,  C30B31/14 ,  H01L21/68757 ,  H01L21/68764 ,  H01L21/68771

摘要： A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 μm or more and 3 μm or less.

摘要翻译： 感受器至少在其表面上涂覆有SiC，包括其中安装晶片的凹部，凹部具有设置在凹部的外周部分的下部的圆形部分，环形SiC晶体生长表面部分 在所述圆形部分内设置有从所述凹部的外周垂直部分限定的0.05mm以上且0.3mm以下的范围，以及所述基座与所述凹部上的所述晶片接触的接触部，所述接触部具有表面粗糙度Ra 0.5μm以上3μm以下的范围。

公开(公告)号：US07393418B2

公开(公告)日：2008-07-01

申请号：US11231938

申请日：2005-09-22

申请人： Masanari Yokogawa

发明人： Masanari Yokogawa

IPC分类号： C23C16/00 ,  C23C16/458 ,  H01L21/306 ,  H01L21/205

CPC分类号： H01L21/68735 ,  C23C16/4581 ,  C23C16/4584 ,  C30B25/12 ,  C30B31/14 ,  H01L21/68757 ,  H01L21/68764 ,  H01L21/68771

摘要： A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 μm or more and 3 μm or less.

摘要翻译： 感受器至少在其表面上涂覆有SiC，包括其中安装晶片的凹部，凹部具有设置在凹部的外周部分的下部的圆形部分，环形SiC晶体生长表面部分 在所述圆形部分内设置有从所述凹部的外周垂直部分限定的0.05mm以上且0.3mm以下的范围，以及所述基座与所述凹部上的所述晶片接触的接触部，所述接触部具有表面粗糙度Ra 0.5μm以上3μm以下的范围。