公开(公告)号：US5061655A

公开(公告)日：1991-10-29

申请号：US653086

申请日：1991-02-11

申请人： Takashi Ipposhi ,  Kozuyuki Sugahara

发明人： Takashi Ipposhi ,  Kozuyuki Sugahara

IPC分类号： H01L21/20 ,  H01L21/263 ,  H01L21/321 ,  H01L21/762

CPC分类号： H01L21/2026 ,  H01L21/321 ,  H01L21/76248 ,  Y10S117/904 ,  Y10S148/093 ,  Y10S148/154

摘要： A method of producing so-called SOI structures according to this invention includes the step of forming an opening for seeding after an insulating layer of predetermined thickness has been formed on a first monocrystal silicon layer. Further, a non-monocrystal layer, e.g., a polycrystal silicon layer is formed on the surface of the insulating layer. The surface of the polycrystal silicon layer is smoothed as by grinding. A reflection-preventive film is formed on the smoothed surface of the polycrystal silicon layer. The reflection-preventive film has a thin film region whose reflectance is substantially zero and a thick film region having a predetermined reflectance. During laser annealing, the reflection-preventive film produces a predetermined temperature distribution in the polycrystal silicon layer. The polycrystal silicon layer which has melted according to this temperature distribution recrystallizes from adjacent the seed portion and thereby forms a new monocrystal silicon layer over the entire surface. The smoothing process for the polycrystal silicon layer prevents any change in the reflectance of the reflection-preventive film and improves control on the temperature distribution in the polycrystal silicon layer.

摘要翻译： 根据本发明的制造所谓的SOI结构的方法包括在第一单晶硅层上形成预定厚度的绝缘层之后形成用于接种​​的开口的步骤。 此外，在绝缘层的表面上形成非单晶层，例如多晶硅层。 多晶硅层的表面通过研磨而平滑化。 在多晶硅层的平滑表面上形成防反射膜。 防反射膜具有反射率基本为零的薄膜区域和具有预定反射率的厚膜区域。 在激光退火期间，防反射膜在多晶硅层中产生预定的温度分布。 根据该温度分布熔融的多晶硅层从种子部分相邻再结晶，从而在整个表面上形成新的单晶硅层。 多晶硅层的平滑处理防止防反射膜的反射率的任何变化，并且改善对多晶硅层中的温度分布的控制。