公开(公告)号：US07156948B2

公开(公告)日：2007-01-02

申请号：US10740111

申请日：2003-12-17

Applicant: Chi-An Lin ,  Kuo-Hung Kuo ,  Ta-Hsin Kuan ,  Po-Yi Lo ,  Ming-Hsien Yang

Inventor： Chi-An Lin ,  Kuo-Hung Kuo ,  Ta-Hsin Kuan ,  Po-Yi Lo ,  Ming-Hsien Yang

IPC: H01L21/306 ,  B44C1/22

CPC classification number: H01L21/67086 ,  C03C17/225 ,  C03C2217/213 ,  C03C2217/281 ,  C03C2217/29 ,  C03C2218/33 ,  H01L29/78603

Abstract: A wet etching apparatus is disclosed. The apparatus comprises a first tank, containing a first wet etching solution; a filter, having a filter cartridge, connected to the first tank to filter out the impurities in the first solution; a second etching tank, connected to the filter and the first tank in parallel, containing a second solution; a reaction tank, connected to the filter, wherein having a wet etching reaction; an exhaust component, connected to the filter and the reaction tank in parallel; a first pump, delivering the first solution to the reaction tank through the filter; and a second pump, delivering the second solution to the exhaust component to exhaust the solution from the etching tank through the filter.

Abstract translation: 公开了一种湿蚀刻装置。 该装置包括：第一罐，包含第一湿蚀刻溶液; 过滤器，具有滤筒，连接到第一罐以过滤第一溶液中的杂质; 第二蚀刻槽，并联连接到所述过滤器和所述第一罐，所述第二腐蚀槽包含第二溶液; 连接到过滤器的反应罐，其中具有湿蚀刻反应; 排气部件，并联连接到过滤器和反应槽; 第一泵，通过过滤器将第一溶液输送到反应罐; 和第二泵，将第二溶液输送到排气部件，以通过过滤器将来自蚀刻槽的溶液排出。

公开(公告)号：US07554619B2

公开(公告)日：2009-06-30

申请号：US11295422

申请日：2005-12-05

Applicant: Mu-Chia Lee ,  Chun-Wei Huang ,  Hung-Che Lu ,  Kuo-Hung Kuo ,  Hong-Bin Li ,  Wen-Kuei Lai ,  Chia-Yi Tsai ,  Yu-Chi Chang ,  Hau-Chiun Li ,  Wei-Chih Chang

Inventor： Mu-Chia Lee ,  Chun-Wei Huang ,  Hung-Che Lu ,  Kuo-Hung Kuo ,  Hong-Bin Li ,  Wen-Kuei Lai ,  Chia-Yi Tsai ,  Yu-Chi Chang ,  Hau-Chiun Li ,  Wei-Chih Chang

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F2201/18

Abstract: The invention discloses a stacked storage capacitor structure for a LTPS TFT-LCD comprising a processed substrate, a first storage capacitor and a second storage capacitor. The first storage capacitor comprises a first conductive layer, a second conductive layer and a first insulating layer therebetween. The stacked storage capacitor structure further comprises a third conductive layer including a first portion and an extended second portion. The second storage capacitor comprises the second conductive layer, the extended second portion of the third conductive layer and a second insulating layer therebetween.

Abstract translation: 本发明公开了一种包括处理衬底，第一存储电容器和第二存储电容器的LTPS TFT-LCD的堆叠存储电容器结构。 第一存储电容器包括第一导电层，第二导电层和第一绝缘层。 层叠的存储电容器结构还包括第三导电层，其包括第一部分和延伸的第二部分。 第二存储电容器包括第二导电层，第三导电层的延伸的第二部分和其间的第二绝缘层。

公开(公告)号：US20070126943A1

公开(公告)日：2007-06-07

申请号：US11295422

申请日：2005-12-05

Applicant: Mu-Chia Lee ,  Chun-Wei Huang ,  Hung-Che Lu ,  Kuo-Hung Kuo ,  Hong-Bin Li ,  Wen-Kuei Lai ,  Chia-Yi Tsai ,  Yu-Chi Chang ,  Hau-Chiun Li ,  Wei-Chih Chang

Inventor： Mu-Chia Lee ,  Chun-Wei Huang ,  Hung-Che Lu ,  Kuo-Hung Kuo ,  Hong-Bin Li ,  Wen-Kuei Lai ,  Chia-Yi Tsai ,  Yu-Chi Chang ,  Hau-Chiun Li ,  Wei-Chih Chang

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F2201/18

Abstract: The invention discloses a stacked storage capacitor structure for a LTPS TFT-LCD comprising a processed substrate, a first storage capacitor and a second storage capacitor. The first storage capacitor comprises a first conductive layer, a second conductive layer and a first insulating layer therebetween. The stacked storage capacitor structure further comprises a third conductive layer including a first portion and an extended second portion. The second storage capacitor comprises the second conductive layer, the extended second portion of the third conductive layer and a second insulating layer therebetween.

Abstract translation: 本发明公开了一种包括处理衬底，第一存储电容器和第二存储电容器的LTPS TFT-LCD的堆叠存储电容器结构。 第一存储电容器包括第一导电层，第二导电层和第一绝缘层。 层叠的存储电容器结构还包括第三导电层，其包括第一部分和延伸的第二部分。 第二存储电容器包括第二导电层，第三导电层的延伸的第二部分和其间的第二绝缘层。