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    Fuse box for semiconductor device and method of forming same
    2.
    发明授权
    Fuse box for semiconductor device and method of forming same 有权
    用于半导体器件的保险丝盒及其形成方法

    公开(公告)号：US07888770B2

    公开(公告)日：2011-02-15

    申请号：US11764385

    申请日：2007-06-18

    Applicant: Kwang-kyu Bang ,  Jong-hyun Choi

    Inventor： Kwang-kyu Bang ,  Jong-hyun Choi

    IPC: H01L29/00

    CPC classification number: H01L23/5258 ,  G11C17/18 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A fuse box for a semiconductor device is disclosed and includes a first fuse group comprising a plurality of first fuses, arranged in a first direction and having a first cutting axis, each first fuse comprising a first portion having a first fuse pitch, a second portion having a second fuse pitch smaller than the first fuse pitch, and a third portion connecting the first and second portions, a second fuse group comprising a plurality of second fuses, arranged in the first direction and having a second cutting axis, each second fuse comprising a first portion having a first fuse pitch, a second portion having a second fuse pitch smaller than the first fuse pitch, and a third portion connecting the first portion and the second portion, and a third fuse group comprising a plurality of third fuses, wherein each third fuse has either the first cutting axis or the second cutting axis, comprises a first pattern arranged in the first direction and having a first fuse pitch, and a second pattern arranged in a second direction and having a second fuse pitch smaller than the first fuse pitch, and is arranged to bypass the first fuse or the second fuse.

    Abstract translation: 公开了一种用于半导体器件的保险丝盒，并且包括：第一熔丝组，包括沿第一方向布置并具有第一切割轴的多个第一熔丝，每个第一熔丝包括具有第一熔丝间距的第一部分，第二部分 具有小于所述第一熔丝间距的第二熔丝节距和连接所述第一部分和所述第二部分的第三部分，包括沿所述第一方向布置并具有第二切割轴的多个第二熔丝的第二熔丝组，每个第二熔丝包括 具有第一熔丝间距的第一部分，具有小于第一熔丝间距的第二熔丝间距的第二部分和连接第一部分和第二部分的第三部分，以及包括多个第三熔丝的第三熔丝组，其中 每个第三保险丝具有第一切割轴或第二切割轴，包括沿第一方向布置并具有第一保险丝间距的第一图案，以及第二图案 rn布置在第二方向上并且具有小于第一熔丝间距的第二熔丝间距，并且被布置成绕过第一熔丝或第二熔丝。

    Methods of forming integrated circuit devices including fuse wires having reduced cross-sectional areas and related structures
    4.
    发明授权
    Methods of forming integrated circuit devices including fuse wires having reduced cross-sectional areas and related structures 有权
    形成集成电路器件的方法包括具有减小的横截面积和相关结构的熔丝

    公开(公告)号：US06878614B2

    公开(公告)日：2005-04-12

    申请号：US10337540

    申请日：2003-01-07

    Applicant: Ho-won Sun ,  Kwang-kyu Bang ,  In-ho Nam

    Inventor： Ho-won Sun ,  Kwang-kyu Bang ,  In-ho Nam

    IPC: H01L21/82 ,  H01L21/8242 ,  H01L23/525 ,  H01L27/02 ,  H01L21/44

    CPC classification number: H01L27/10894 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming an integrated circuit device can include forming a plurality of fuse wires on an integrated circuit substrate, and forming an insulating layer on the integrated circuit substrate and on the plurality of fuse wires so that the fuse wires are between the integrated circuit substrate and the insulating layer. A plurality of fuse cutting holes can be formed in the insulating layer wherein each of the fuse cutting holes exposes a target spot on a respective one of the fuse wires, and a cross-sectional area of the fuse wires can be reduced at the exposed target spots. Related structures are also discussed.

    Abstract translation: 形成集成电路器件的方法可以包括在集成电路衬底上形成多个熔丝，并且在集成电路衬底上和多个熔丝上形成绝缘层，使得熔丝在集成电路衬底之间 和绝缘层。 可以在绝缘层中形成多个保险丝切割孔，其中每个保险丝切割孔暴露在相应的一根熔丝上的目标点，并且可以在暴露的目标位置减小熔丝的横截面积 斑点。 还讨论了相关结构。

    Semiconductor device including fuse focus detector, fabricating method thereof and laser repair method using the fuse focus detector
    8.
    发明授权
    Semiconductor device including fuse focus detector, fabricating method thereof and laser repair method using the fuse focus detector 有权
    包括保险丝聚焦检测器，其制造方法和使用熔丝焦点检测器的激光修复方法的半导体器件

    公开(公告)号：US07671361B2

    公开(公告)日：2010-03-02

    申请号：US11434144

    申请日：2006-05-16

    Applicant: Kwang-kyu Bang ,  Yong-won Lee ,  Kyeong-seon Shin ,  Hyen-wook Ju ,  Jeong-kyu Kim

    Inventor： Kwang-kyu Bang ,  Yong-won Lee ,  Kyeong-seon Shin ,  Hyen-wook Ju ,  Jeong-kyu Kim

    IPC: H01L23/58

    CPC classification number: H01L23/544 ,  B23K26/351 ,  H01L23/5258 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.

    Abstract translation: 提供一种半导体器件，包括熔丝焦点检测器，其制造方法和激光修复方法。 在芯片区域中，可以在第一级形成保险丝。 包括第一和第二导电层的熔丝聚焦检测器可以形成在划线区域中。 第一导电层可以形成在第一层，而第二导电层可以形成在不同的水平。 对于激光修复方法，可以将目标区域划分为子区域。 在一个选择的子区域中，可以在提供关于熔丝聚焦检测器的厚度的信息的反射光测量的方向上激光扫描熔丝聚焦检测器。 使用厚度信息，可以计算所选子区域中的熔丝的聚焦偏移值。 当焦点偏移值在允许范围内时，可以执行熔断器切割。

    Fuse box reducing damage caused by laser blowing and cross talk
    9.
    发明授权
    Fuse box reducing damage caused by laser blowing and cross talk 失效
    保险丝盒减少了激光吹扫和串扰造成的损坏

    公开(公告)号：US07605444B2

    公开(公告)日：2009-10-20

    申请号：US11637996

    申请日：2006-12-13

    Applicant: Kwang-kyu Bang ,  Kun-gu Lee ,  Jeong-kyu Kim

    Inventor： Kwang-kyu Bang ,  Kun-gu Lee ,  Jeong-kyu Kim

    IPC: H01L29/00

    CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided are a fuse box that simultaneously prevents damage caused by laser blowing and cross talk between the fuses and a method of manufacturing the same. In a fuse box having an open region in which fuses are opened by laser blowing and a bundle region in which fuse opens do not occur, a capping layer, adjacent to the open region, having a metal layer and an insulation layer covers the outermost fuses in the bundle region, thereby reducing the influence of laser blowing of fuses in the bundle region, and preventing capacitive coupling caused by the formation of a parasitic capacitor between fuse lines and an insulation layer therebetween. Accordingly, cross talk due to the capacitive coupling can be prevented, thereby enhancing the reliability of a fuse circuit. Lower fuses can be disposed in a lower layer in the bundle region, thereby forming a two-layered fuse box.

    Abstract translation: 提供了一种保险丝盒，其同时防止由熔断器之间的激光吹扫和串扰造成的损坏及其制造方法。 在具有开放区域的保险丝盒中，通过激光吹制保险丝打开，并且不会发生保险丝打开的束区域，具有金属层和绝缘层的与敞开区域相邻的封盖层覆盖最外侧保险丝 在束区域中，由此减少了束区域中的熔丝的激光吹送的影响，并且防止了熔丝线之间的寄生电容器之间形成的电容耦合以及它们之间的绝缘层。 因此，可以防止由于电容耦合引起的串扰，从而提高了熔丝电路的可靠性。 下部保险丝可以设置在束区域的下层中，从而形成双层保险丝盒。

    FUSE BOX AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
    10.
    发明申请
    FUSE BOX AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME 有权
    保险丝盒和半导体存储器件，包括它们

    公开(公告)号：US20090141578A1

    公开(公告)日：2009-06-04

    申请号：US12327985

    申请日：2008-12-04

    Applicant: Kwang-Kyu Bang

    Inventor： Kwang-Kyu Bang

    IPC: G11C11/00 ,  H01L23/525

    CPC classification number: H01L23/5258 ,  G11C17/143 ,  G11C17/16 ,  G11C29/785 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A fuse box of a semiconductor memory device which comprises a plurality of fuse units commonly connected to a power line, each of the fuse units comprising a first fuse connected with the power line; and a plurality of second fuses connected with the first fuse in parallel. If the second fuses are determined to be cut off, the first fuse is cut off instead of the second fuses.

    Abstract translation: 一种半导体存储器件的保险丝盒，包括共同连接到电源线的多个熔丝单元，每个熔丝单元包括与电源线相连的第一熔丝; 以及与第一熔丝并联连接的多个第二熔丝。 如果第二个保险丝被确定为切断，则第一个保险丝被切断而不是第二个保险丝。

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