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公开(公告)号：US08860101B2
公开(公告)日：2014-10-14
申请号：US13406363
申请日：2012-02-27
申请人： Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
发明人： Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
IPC分类号： H01L31/062
CPC分类号： H01L31/103 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment an isolation region comprising a first concentration of dopants is located between the photosensitive diodes. The photosensitive diodes have a second concentration of dopants that is less than the first concentration of dopants, which helps to prevent diffusion from the photosensitive diodes to form a potential path for undesired cross-talk between the photosensitive diodes.
摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施方案中，包含第一浓度的掺杂剂的隔离区位于感光二极管之间。 感光二极管具有小于掺杂剂的第一浓度的掺杂剂的第二浓度，这有助于防止光敏二极管扩散以形成感光二极管之间不期望的串扰的电势路径。
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公开(公告)号：US20130207220A1
公开(公告)日：2013-08-15
申请号：US13406363
申请日：2012-02-27
申请人： Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
发明人： Lan Fang Chang , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Chih-Kang Chao , Fu-Sheng Guo
IPC分类号： H01L31/102 , H01L31/18
CPC分类号： H01L31/103 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment an isolation region comprising a first concentration of dopants is located between the photosensitive diodes. The photosensitive diodes have a second concentration of dopants that is less than the first concentration of dopants, which helps to prevent diffusion from the photosensitive diodes to form a potential path for undesired cross-talk between the photosensitive diodes.
摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施方案中，包含第一浓度的掺杂剂的隔离区位于感光二极管之间。 感光二极管具有小于掺杂剂的第一浓度的掺杂剂的第二浓度，这有助于防止光敏二极管扩散以形成感光二极管之间不期望的串扰的电势路径。
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公开(公告)号：US20100240155A1
公开(公告)日：2010-09-23
申请号：US12636539
申请日：2009-12-11
申请人： Lan Fang Chang , Wei-Ming You
发明人： Lan Fang Chang , Wei-Ming You
CPC分类号： H01L21/67282 , B23K26/032 , B41M5/26 , H01L22/12 , H01L22/20 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/14 , H01L2924/00
摘要： A method of manufacturing integrated circuits includes measuring a reflectivity value of a wafer. An optimum energy level for laser marking the wafer is determined using the reflectivity value. A laser beam having the optimum energy level is then emitted to make laser marks on the wafer.
摘要翻译： 集成电路的制造方法包括测量晶片的反射率值。 使用反射率值确定用于激光标记晶片的最佳能级。 然后发射具有最佳能级的激光束以在晶片上形成激光标记。
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公开(公告)号：US08129203B2
公开(公告)日：2012-03-06
申请号：US12636539
申请日：2009-12-11
申请人： Lan Fang Chang , Wei-Ming You
发明人： Lan Fang Chang , Wei-Ming You
IPC分类号： H01L21/66
CPC分类号： H01L21/67282 , B23K26/032 , B41M5/26 , H01L22/12 , H01L22/20 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/14 , H01L2924/00
摘要： A method of manufacturing integrated circuits includes measuring a reflectivity value of a wafer. An optimum energy level for laser marking the wafer is determined using the reflectivity value. A laser beam having the optimum energy level is then emitted to make laser marks on the wafer.
摘要翻译： 集成电路的制造方法包括测量晶片的反射率值。 使用反射率值确定用于激光标记晶片的最佳能级。 然后发射具有最佳能级的激光束以在晶片上形成激光标记。
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