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公开(公告)号：US5681486A
公开(公告)日：1997-10-28
申请号：US606419
申请日：1996-02-23
CPC分类号： C23G5/00
摘要： The invention provides a method of removing surface scale from a titanium or titanium alloy substrate. The method includes the steps of heating the substrate to a temperature in the range from about 100.degree. C. to about 600.degree. C., and thereafter subjecting the heated surface to a plasma formed from a gas selected from the group of consisting of CF.sub.4 and SF.sub.6. The plasma reacts with the surface scale, removing the scale, without attacking the underlying crystalline titanium or titanium alloy. Properly controlled, the plasma reaction terminates when the plasma has penetrated the scale and encounters the underlying crystalline metal. As a result, the method of the invention is capable of uniform removal of the entire surface scale of a crystalline titanium-containing substrate, without intergranular attack of the substrate.
摘要翻译： 本发明提供了从钛或钛合金基底去除表面刻度的方法。 该方法包括以下步骤：将基底加热至约100℃至约600℃的温度，然后将加热的表面经受从由以下组成的气体形成的等离子体：CF4和 SF6。 等离子体与表面刻度反应，去除刻度，而不侵蚀下面的晶体钛或钛合金。 正确控制时，当等离子体已经穿过刻度并遇到下面的晶体金属时，等离子体反应终止。 结果，本发明的方法能够均匀地除去结晶含钛基材的整个表面氧化皮，而不会造成基板的晶间侵袭。
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公开(公告)号：USRE36746E
公开(公告)日：2000-06-27
申请号：US154926
申请日：1998-09-16
CPC分类号： C23G5/00
摘要： The invention provides a method of removing surface scale from a titanium or titanium alloy substrate. The method includes the steps of heating the substrate to a temperature in the range from about 100.degree. C. to about 600.degree. C., and thereafter subjecting the heated surface to a plasma formed from a gas selected from the group of consisting of CF.sub.4 and SF.sub.6. The plasma reacts with the surface scale, removing the scale, without attacking the underlying crystalline titanium or titanium alloy. Properly controlled, the plasma reaction terminates when the plasma has penetrated the scale, and encounters the underlying crystalline metal. As a result, the method of the invention is capable of uniform removal of the entire surface scale of a crystalline titanium-containing substrate, without intergranular attack of the substrate.
摘要翻译： 本发明提供了从钛或钛合金基底去除表面刻度的方法。 该方法包括以下步骤：将基底加热至约100℃至约600℃的温度，然后将加热的表面经受从由以下组成的气体形成的等离子体：CF4和 SF6。 等离子体与表面刻度反应，去除刻度，而不侵蚀下面的晶体钛或钛合金。 正确控制时，当等离子体已经渗透到刻度上并且遇到下面的晶体金属时，等离子体反应终止。 结果，本发明的方法能够均匀地除去结晶含钛基材的整个表面氧化皮，而不会造成基板的晶间侵袭。
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公开(公告)号：US6010635A
公开(公告)日：2000-01-04
申请号：US975242
申请日：1997-11-21
CPC分类号： C23G5/00 , H01J2237/335
摘要： The plasma descaling process of the present invention removes surface oxides selectively from structural metal surfaces, especially titanium and its alloys, and, with appropriate control of the reaction temperature, is self-limiting to avoid cracking problems otherwise associated with intergranular attack. In a preferred embodiment of the present invention, a fluoride plasma reacts with surface oxides on a titanium alloy to remove scale and alpha case in a temperature controlled chamber without attacking the underlying crystalline metal to cause intergranular attack. Properly controlled by regulating the chamber temperature, the plasma reaction terminates when the plasma has removed the surface oxides and encounters the underlying crystalline metal. The product is a metal surface free of scale and alpha case and free of intergranular attack. The plasma descaling process replaces conventional metal finishing processes, such as chemical milling or etching.
摘要翻译： 本发明的等离子体除垢方法从结构金属表面，特别是钛及其合金中选择性地去除表面氧化物，并且通过适当控制反应温度，是自限制的，以避免与晶间侵蚀有关的裂纹问题。 在本发明的优选实施方案中，氟化物等离子体与钛合金上的表面氧化物反应以除去温度控制室中的氧化皮和α壳，而不侵蚀下面的晶体金属以引起晶间侵蚀。 通过调节室温来适当控制，当等离子体已经除去表面氧化物并遇到下面的晶体金属时，等离子体反应终止。 该产品是没有鳞片和α壳的金属表面，没有晶间侵袭。 等离子体除垢过程代替常规的金属精加工工艺，例如化学研磨或蚀刻。
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