公开(公告)号：US08017475B1

公开(公告)日：2011-09-13

申请号：US12804414

申请日：2010-07-20

申请人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

发明人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

IPC分类号： H01L21/8242

CPC分类号： H01L28/57 ,  H01L27/0629 ,  H01L27/0805

摘要： A method of fabricating a high-performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the standard CMOS process may be maintained, particularly for the definition and etch of the lower electrode layer. To reduce variation in critical dimension width, an Anti-Reflective Layer (ARL) is used, such as a Plasma Enhanced chemical vapor deposition Anti-Reflective Layer (PEARL) or other Anti-Reflective Coatings (ARCS), such as a conductive film like TiN. This ARL formation occurs after the capacitor specific process steps, but prior to the masking used for defining the lower electrodes. A Rapid Thermal Oxidation (RTO) is performed subsequent to removing the unwanted capacitor dielectric layer from the transistor poly outside of the capacitor regions, but prior to the PEARL deposition. Another embodiment instead eliminates the capacitor dielectric removal step, which is then replaced by a step to form an additional layer that is later etched away to leave spacers on the capacitor sides, thereby eliminating any undercutting of the dielectric.

摘要翻译： 描述了可以并入适用于亚微米器件的标准CMOS制造工艺中的制造高性能电容器的方法。 可以保持在标准CMOS工艺中使用的参数，特别是对于下电极层的定义和蚀刻。 为了减小临界尺寸宽度的变化，使用抗反射层（ARL），例如等离子体增强化学气相沉积抗反射层（PEARL）或其它抗反射涂层（ARCS），例如导电膜 锡。 该ARL形成发生在电容器特定工艺步骤之后，但在用于限定下电极的掩模之前。 在从电容器区域外的晶体管多晶硅去除不需要的电容器介电层之后，但在PEARL沉积之前，执行快速热氧化（RTO）。 另一个实施例代替消除了电容器介质去除步骤，然后由步骤代替以形成附加层，随后蚀刻掉附加层以在电容器侧留下间隔物，从而消除电介质的任何底切。

公开(公告)号：US07060584B1

公开(公告)日：2006-06-13

申请号：US09351544

申请日：1999-07-12

申请人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

发明人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

IPC分类号： H01L21/331

CPC分类号： H01L28/57 ,  H01L27/0629 ,  H01L27/0805

摘要： A method of fabricating a high performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the standard CMOS process may be maintained, particularly for the definition and etch of the lower electrode layer. To reduce variation in critical dimension width, an Anti-Reflective Layer (ARL) is used. In the preferred embodiment, this is of the Plasma Enhanced chemical vapor deposition Anti-Reflective Layer (PEARL) type, although other Anti-Reflective Coatings (ARCs) or layers, such as a conductive film like TiN may be employed. This ARL formation occurs after the capacitor specific process steps, but prior to the masking used for defining the lower electrodes. In one embodiment, a Rapid Thermal Oxidation (RTO) is performed subsequent to removing the unwanted capacitor dielectric layer from the transistor poly outside of the capacitor regions, but prior to the PEARL deposition. Another embodiment instead eliminates the capacitor dielectric removal step, which is then replaced by a step to form an additional layer which, in a second step, is then etched away to leave spacers on the capacitor sides, thereby eliminating any undercutting of the dielectric.

摘要翻译： 描述了一种制造可以并入适用于亚微米器件的标准CMOS制造工艺中的高性能电容器的方法。 可以保持在标准CMOS工艺中使用的参数，特别是对于下电极层的定义和蚀刻。 为了减小关键尺寸宽度的变化，使用抗反射层（ARL）。 在优选实施例中，这是等离子体增强化学气相沉积抗反射层（PEARL）型，但是也可以使用其它抗反射涂层（ARC）或诸如TiN等导电膜的层。 该ARL形成发生在电容器特定工艺步骤之后，但在用于限定下电极的掩模之前。 在一个实施例中，在从电容器区域外的晶体管多晶硅聚集层除去不想要的电容器介电层之前，但在PEARL沉积之前，执行快速热氧化（RTO）。 另一实施例代替消除了电容器电介质去除步骤，然后由步骤代替以形成附加层，然后在第二步中蚀刻掉附加层，以在电容器侧留下间隔物，从而消除电介质的任何底切。

公开(公告)号：US08324069B1

公开(公告)日：2012-12-04

申请号：US13134159

申请日：2011-05-31

申请人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

发明人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

IPC分类号： H01L21/20

CPC分类号： H01L28/57 ,  H01L27/0629 ,  H01L27/0805

摘要： A method of fabricating a high-performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the standard CMOS process may be maintained, particularly for the definition and etch of the lower electrode layer. To reduce variation in critical dimension width, an Anti-Reflective Layer (ARL) is used, such as a Plasma Enhanced chemical vapor deposition Anti-Reflective Layer (PEARL) or other Anti-Reflective Coatings (ARCS), such as a conductive film like TiN. This ARL formation occurs after the capacitor specific process steps, but prior to the masking used for defining the lower electrodes. A Rapid Thermal Oxidation (RTO) is performed subsequent to removing the unwanted capacitor dielectric layer from the transistor poly outside of the capacitor regions, but prior to the PEARL deposition. Another embodiment instead eliminates the capacitor dielectric removal step, which is then replaced by a step to form an additional layer that is later etched away to leave spacers on the capacitor sides, thereby eliminating any undercutting of the dielectric.

摘要翻译： 描述了可以并入适用于亚微米器件的标准CMOS制造工艺中的制造高性能电容器的方法。 可以保持在标准CMOS工艺中使用的参数，特别是对于下电极层的定义和蚀刻。 为了减小临界尺寸宽度的变化，使用抗反射层（ARL），例如等离子体增强化学气相沉积抗反射层（PEARL）或其它抗反射涂层（ARCS），例如导电膜 锡。 该ARL形成发生在电容器特定工艺步骤之后，但在用于限定下电极的掩模之前。 在从电容器区域外的晶体管多晶硅去除不需要的电容器介电层之后，但在PEARL沉积之前，执行快速热氧化（RTO）。 另一个实施例代替消除了电容器介质去除步骤，然后由步骤代替以形成附加层，随后蚀刻掉附加层以在电容器侧留下间隔物，从而消除电介质的任何底切。

公开(公告)号：US07768052B1

公开(公告)日：2010-08-03

申请号：US11289262

申请日：2005-11-29

申请人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

发明人： Timothy K. Carns ,  John L. Horvath ,  Lee J. DeBruler ,  Michael J. Westphal

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L28/57 ,  H01L27/0629 ,  H01L27/0805

摘要： A method of fabricating a high-performance capacitor that may be incorporated into a standard CMOS fabrication process suitable for submicron devices is described. The parameters used in the standard CMOS process may be maintained, particularly for the definition and etch of the lower electrode layer. To reduce variation in critical dimension width, an Anti-Reflective Layer (ARL) is used, such as a Plasma Enhanced chemical vapor deposition Anti-Reflective Layer (PEARL) or other Anti-Reflective Coatings (ARCS), such as a conductive film like TiN. This ARL formation occurs after the capacitor specific process steps, but prior to the masking used for defining the lower electrodes. A Rapid Thermal Oxidation (RTO) is performed subsequent to removing the unwanted capacitor dielectric layer from the transistor poly outside of the capacitor regions, but prior to the PEARL deposition. Another embodiment instead eliminates the capacitor dielectric removal step, which is then replaced by a step to form an additional layer that is later etched away to leave spacers on the capacitor sides, thereby eliminating any undercutting of the dielectric.

摘要翻译： 描述了可以并入适用于亚微米器件的标准CMOS制造工艺中的制造高性能电容器的方法。 可以保持在标准CMOS工艺中使用的参数，特别是对于下电极层的定义和蚀刻。 为了减小临界尺寸宽度的变化，使用抗反射层（ARL），例如等离子体增强化学气相沉积抗反射层（PEARL）或其它抗反射涂层（ARCS），例如导电膜 锡。 该ARL形成发生在电容器特定工艺步骤之后，但在用于限定下电极的掩模之前。 在从电容器区域外的晶体管多晶硅去除不需要的电容器介电层之后，但在PEARL沉积之前，执行快速热氧化（RTO）。 另一个实施例代替消除电容器电介质去除步骤，然后由步骤代替以形成附加层，该附加层随后被蚀刻掉以在电容器侧留下间隔物，由此消除电介质的任何底切。