Method for continuous production of elongated carbon bodies
    1.
    发明授权
    Method for continuous production of elongated carbon bodies 失效
    连续生产细长碳体的方法

    公开(公告)号:US4612151A

    公开(公告)日:1986-09-16

    申请号:US668492

    申请日:1984-11-05

    CPC classification number: H05B7/09 Y02P10/262 Y10T29/49117

    Abstract: The present invention relates to a method for continuous production of elongated carbon bodies having substantial uniform cross-section where a casing filled with unbaked carbonaceous electrode paste is slowly and substantially continuously lowered down through a baking furnace having an external energy supply. The casing is perforated in order to allow baking gases to flow from the electrode paste and into the baking furnace. Air for combustion of the baking gases is supplied to the baking furnace in an amount necessary for combustion of the baking gases which flow into the baking furnace. The external energy supplied to the baking furnace is controlled in such a way that the total amount of external energy supplied to the baking furnace and the energy generated by combustion of the baking gases inside the baking furnace is sufficient to maintain a temperature inside the baking furnace of 700.degree.-1300.degree. C., preferably 900.degree.-1100.degree. C.

    Abstract translation: 本发明涉及一种用于连续生产具有基本均匀横截面的细长碳体的方法,其中填充有未焙烧的碳质电极浆料的壳体通过具有外部能量供应的烘烤炉缓慢且基本上连续地降低。 套管被穿孔以便烘烤气体从电极浆料流入焙烧炉。 将焙烧气体燃烧的空气以烘焙炉内的烘烤气体的燃烧所需的量供给烘焙炉。 供给到烘焙炉的外部能量被控制成使得供给烘焙炉的外部能量的总量和烘焙炉内的烘烤气体的燃烧产生的能量足以保持焙烧炉内部的温度 700°-1300℃,优选900°-1100℃

    Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication
    2.
    发明申请
    Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication 有权
    用于减轻浅沟槽隔离制造的蚀刻停止限幅的方法和系统

    公开(公告)号:US20050282351A1

    公开(公告)日:2005-12-22

    申请号:US10874038

    申请日:2004-06-22

    Abstract: The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.

    Abstract translation: 本发明通过在沟槽填充操作期间保持蚀刻停止层(206)的形状和密度来促进半导体制造。 通过在沟槽填充操作之前在蚀刻停止层(206)上形成保护合金衬垫层(310)来保持蚀刻停止层(206)的形状和密度。 保护合金衬套(310)由对沟槽填充操作中使用的材料具有耐受性的合金构成。 结果,减轻了对蚀刻停止层(206)的削波和/或损伤,从而有利于采用蚀刻停止层(206)的随后的平坦化工艺。 此外,形成的保护合金(310)的厚度和组成(1706)的选择产生施加到未成形晶体管器件的沟道区域的应力量和类型(1704),最终提供了沟道迁移率的改善。

    Heating or cooling mat
    4.
    发明授权
    Heating or cooling mat 有权
    加热或冷却垫

    公开(公告)号:US08816251B2

    公开(公告)日:2014-08-26

    申请号:US12158184

    申请日:2006-12-20

    Abstract: The invention concerns a heating or cooling mat (1) with a carrying sheet (2) having a top side (9) and a bottom side (11), and at least one heating and cooling unit (5) located on the carrying sheet (2), an adhesive being located on the bottom side (11) of the carrying sheet (2). It is endeavored to improve the handling properties of the heating or cooling mat. For this purpose, the adhesive is located on a double-sided adhesive tape (12), which is fixed on the bottom side (11) of the carrying sheet (2), the adhesive on the bottom side of the adhesive tape (12) being covered by the top side of the carrying sheet (2) and the adhesive tape (12) bonding with the top side of the carrying sheet (2) in the rolled up state of the heating or cooling mat (1).

    Abstract translation: 本发明涉及具有带顶板(9)和底侧(11)的承载板(2)的加热或冷却垫(1)和位于承载板上的至少一个加热和冷却单元(5) 2),粘合剂位于承载板(2)的底侧(11)上。 努力提高加热或冷却垫的处理性能。 为此,粘合剂位于固定在承载板(2)的底侧(11)上的双面胶带(12)上,胶带(12)的底侧上的粘合剂, 在加热或冷却垫(1)的卷起状态下,由承载板(2)的顶侧和与承载板(2)的顶侧粘合的粘合带(12)被覆盖。

    HEATING AND COOLING MAT
    5.
    发明申请
    HEATING AND COOLING MAT 有权
    加热和冷却垫

    公开(公告)号:US20090050616A1

    公开(公告)日:2009-02-26

    申请号:US12158184

    申请日:2006-12-20

    Abstract: The invention concerns a heating and cooling mat (1) with a carrying sheet (2) having a top side (9) and a bottom side (11), and at least one heating and cooling unit (5) located on the carrying sheet (2), an adhesive being located on the bottom side (11) of the carrying sheet (2). It is endeavoured to improve the handling properties of the heating and cooling mat. For this purpose, the adhesive is located on a double-sided adhesive tape (12), which is fixed on the bottom side (11) of the carrying sheet (2), the adhesive on the bottom side of the adhesive tape (12) being covered by the top side of the carrying sheet (2) and the adhesive tape (12) bonding with the top side of the carrying sheet (2) in the rolled up state of the heating and cooling mat (1).

    Abstract translation: 本发明涉及具有带顶板(9)和底侧(11)的承载板(2)的加热和冷却垫(1)和位于承载板上的至少一个加热和冷却单元(5) 2),粘合剂位于承载板(2)的底侧(11)上。 努力提高加热和冷却垫的处理性能。 为此,粘合剂位于固定在承载板(2)的底侧(11)上的双面胶带(12)上,胶带(12)的底侧上的粘合剂, 在加热和冷却垫(1)的卷起状态下由承载板(2)的顶侧和粘合带(12)覆盖在承载板(2)的顶侧。

    Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication
    6.
    发明申请
    Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication 有权
    用于减轻浅沟槽隔离制造的蚀刻停止限幅的方法和系统

    公开(公告)号:US20070134886A1

    公开(公告)日:2007-06-14

    申请号:US11678107

    申请日:2007-02-23

    Abstract: The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.

    Abstract translation: 本发明通过在沟槽填充操作期间保持蚀刻停止层(206)的形状和密度来促进半导体制造。 通过在沟槽填充操作之前在蚀刻停止层(206)上形成保护合金衬垫层(310)来保持蚀刻停止层(206)的形状和密度。 保护合金衬套(310)由对沟槽填充操作中使用的材料具有耐受性的合金构成。 结果,减轻了对蚀刻停止层(206)的削波和/或损伤,从而有利于采用蚀刻停止层(206)的随后的平坦化工艺。 此外,形成的保护合金(310)的厚度和组成(1706)的选择产生施加到未成形晶体管器件的沟道区域的应力量和类型(1704),最终提供了沟道迁移率的改善。

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