Abstract:
The present invention relates to a method for continuous production of elongated carbon bodies having substantial uniform cross-section where a casing filled with unbaked carbonaceous electrode paste is slowly and substantially continuously lowered down through a baking furnace having an external energy supply. The casing is perforated in order to allow baking gases to flow from the electrode paste and into the baking furnace. Air for combustion of the baking gases is supplied to the baking furnace in an amount necessary for combustion of the baking gases which flow into the baking furnace. The external energy supplied to the baking furnace is controlled in such a way that the total amount of external energy supplied to the baking furnace and the energy generated by combustion of the baking gases inside the baking furnace is sufficient to maintain a temperature inside the baking furnace of 700.degree.-1300.degree. C., preferably 900.degree.-1100.degree. C.
Abstract:
The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.
Abstract:
The invention concerns a heating or cooling mat (1) with a carrying sheet (2) having a top side (9) and a bottom side (11), and at least one heating and cooling unit (5) located on the carrying sheet (2), an adhesive being located on the bottom side (11) of the carrying sheet (2). It is endeavored to improve the handling properties of the heating or cooling mat. For this purpose, the adhesive is located on a double-sided adhesive tape (12), which is fixed on the bottom side (11) of the carrying sheet (2), the adhesive on the bottom side of the adhesive tape (12) being covered by the top side of the carrying sheet (2) and the adhesive tape (12) bonding with the top side of the carrying sheet (2) in the rolled up state of the heating or cooling mat (1).
Abstract:
The invention concerns a heating and cooling mat (1) with a carrying sheet (2) having a top side (9) and a bottom side (11), and at least one heating and cooling unit (5) located on the carrying sheet (2), an adhesive being located on the bottom side (11) of the carrying sheet (2). It is endeavoured to improve the handling properties of the heating and cooling mat. For this purpose, the adhesive is located on a double-sided adhesive tape (12), which is fixed on the bottom side (11) of the carrying sheet (2), the adhesive on the bottom side of the adhesive tape (12) being covered by the top side of the carrying sheet (2) and the adhesive tape (12) bonding with the top side of the carrying sheet (2) in the rolled up state of the heating and cooling mat (1).
Abstract:
The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.