公开(公告)号：US08338960B2

公开(公告)日：2012-12-25

申请号：US13437575

申请日：2012-04-02

Applicant: Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

Inventor： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC: H01L23/522

CPC classification number: G03F1/36

Abstract: A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

公开(公告)号：US08278762B2

公开(公告)日：2012-10-02

申请号：US12568027

申请日：2009-09-28

Applicant: Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

Inventor： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC: H01L23/48

CPC classification number: G03F1/36

Abstract: A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

Abstract translation: 描述了制造光掩模的方法。 提供光掩模的图形数据，并且对图形数据进行光学邻近校正。 然后使用光学邻近校正对图形数据执行处理规则检查。 当在图形数据中找到至少一个未通过过程规则检查的故障模式时，仅对故障模式执行修复过程，以使故障模式能够通过进程规则检查。 然后根据校正和修复的图形数据形成光掩模的图案。

公开(公告)号：US20080163892A1

公开(公告)日：2008-07-10

申请号：US11621002

申请日：2007-01-08

Applicant: I-Hsiung Huang ,  Ling-Chieh Lin

Inventor： I-Hsiung Huang ,  Ling-Chieh Lin

IPC: B08B3/08 ,  C11D7/00 ,  B08B7/00

CPC classification number: C11D11/0047 ,  B08B3/08 ,  C11D17/049 ,  G03F7/70341 ,  G03F7/70925 ,  G03F7/70933 ,  G03F7/70983 ,  H01L21/6704

Abstract: A method of an in situ cleaning of an objective lens of a semiconductor apparatus includes placing a cleaning wafer having a detergent layer on a scanning stage of the semiconductor apparatus. A cleaning composition in the detergent layer is dissolved by using an immersion liquid (water), so that the cleaning composition reacts with the contaminants on the objective lens. Thereafter, the objective lens is rinsed with another solvent.

Abstract translation: 半导体装置的物镜的原位清洁方法包括将具有洗涤剂层的清洁晶片放置在半导体装置的扫描台上。 通过使用浸没液（水）将洗涤剂层中的清洁组合物溶解，使得清洁组合物与物镜上的污染物反应。 此后，用另一溶剂冲洗物镜。

公开(公告)号：US20120187571A1

公开(公告)日：2012-07-26

申请号：US13437575

申请日：2012-04-02

Applicant: Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

Inventor： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC: H01L23/522

CPC classification number: G03F1/36

Abstract: A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

Abstract translation: 描述制造光掩模的方法。 提供光掩模的图形数据，并且对图形数据进行光学邻近校正。 然后使用光学邻近校正对图形数据执行处理规则检查。 当在图形数据中找到至少一个未通过过程规则检查的故障模式时，仅对故障模式执行修复过程，以使故障模式能够通过进程规则检查。 然后根据校正和修复的图形数据形成光掩模的图案。

公开(公告)号：US07617475B2

公开(公告)日：2009-11-10

申请号：US11559107

申请日：2006-11-13

Applicant: Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

Inventor： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

Abstract translation: 描述制造光掩模的方法。 提供光掩模的图形数据，并且对图形数据进行光学邻近校正。 然后使用光学邻近校正对图形数据执行处理规则检查。 当在图形数据中找到至少一个未通过过程规则检查的故障模式时，仅对故障模式执行修复过程，以使故障模式能够通过进程规则检查。 然后根据校正和修复的图形数据形成光掩模的图案。

公开(公告)号：US20080178140A1

公开(公告)日：2008-07-24

申请号：US11624544

申请日：2007-01-18

Applicant: Ling-Chieh Lin ,  Chuen-Huei Yang ,  Chien-Fu Lee ,  I-Hsiung Huang

Inventor： Ling-Chieh Lin ,  Chuen-Huei Yang ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method for correcting a photomask pattern is disclosed. The correction method determines a layout condition according to the space and line width of a layout pattern. The layout condition is used to determine the type of optical proximity correction to be used for a layout pattern in order to generate a correction pattern, and the correction pattern is compared with a predetermined specification. Furthermore, a modified-rule optical proximity correction table is employed to correct the special layout pattern. Therefore, the fidelity correction may be easily implemented.

Abstract translation: 公开了一种用于校正光掩模图案的方法。 校正方法根据布局图案的空间和线宽确定布局条件。 布局条件用于确定要用于布局图案的光学邻近校正的类型，以便生成校正图案，并且将校正图案与预定规格进行比较。 此外，采用修改规则光学邻近校正表来校正特殊布局图案。 因此，可以容易地实现保真度校正。

公开(公告)号：US20100013105A1

公开(公告)日：2010-01-21

申请号：US12568027

申请日：2009-09-28

Applicant: Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

Inventor： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC: H01L23/48

CPC classification number: G03F1/36

Abstract: A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

Abstract translation: 描述制造光掩模的方法。 提供光掩模的图形数据，并且对图形数据进行光学邻近校正。 然后使用光学邻近校正对图形数据执行处理规则检查。 当在图形数据中找到至少一个未通过过程规则检查的故障模式时，仅对故障模式执行修复过程，以使故障模式能够通过进程规则检查。 然后根据校正和修复的图形数据形成光掩模的图案。

公开(公告)号：US20070053077A1

公开(公告)日：2007-03-08

申请号：US11218454

申请日：2005-09-02

Applicant: Ling-Chieh Lin ,  I-Hsiung Huang ,  Te-Hung Wu ,  Chin-Lung Lin

Inventor： Ling-Chieh Lin ,  I-Hsiung Huang ,  Te-Hung Wu ,  Chin-Lung Lin

IPC: G02B9/00 ,  G02B9/08

CPC classification number: G03F7/701 ,  G02B5/005 ,  G03F7/70091

Abstract: A customer illumination aperture (CIA) structure for lithographic exposure is disclosed, including a central part and at least one off-axis part around the central part. The off-axis part of the CIA is disposed in a symmetric manner with respect to the central part.

Abstract translation: 公开了一种用于光刻曝光的客户照明孔径（CIA）结构，包括中心部分和围绕中心部分的至少一个离轴部分。 CIA的离轴部分相对于中心部分以对称的方式设置。

公开(公告)号：US20080113274A1

公开(公告)日：2008-05-15

申请号：US11559107

申请日：2006-11-13

Applicant: LING-CHIEH LIN ,  CHIEN-FU LEE ,  I-HSIUNG HUANG

Inventor： LING-CHIEH LIN ,  CHIEN-FU LEE ,  I-HSIUNG HUANG

IPC: G03F1/00

CPC classification number: G03F1/36

Abstract: A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

Abstract translation: 描述制造光掩模的方法。 提供光掩模的图形数据，并且对图形数据进行光学邻近校正。 然后使用光学邻近校正对图形数据执行处理规则检查。 当在图形数据中找到至少一个未通过过程规则检查的故障模式时，仅对故障模式执行修复过程，以使故障模式能够通过进程规则检查。 然后根据校正和修复的图形数据形成光掩模的图案。