公开(公告)号：US20180345328A1

公开(公告)日：2018-12-06

申请号：US16055871

申请日：2018-08-06

申请人： SCREEN Holdings Co., Ltd.

发明人： Hiroaki KITAGAWA ,  Katsuhiko MIYA

IPC分类号： B08B3/10 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00

CPC分类号： B08B3/10 ,  B08B7/0014 ,  B08B7/0064 ,  B08B7/0092 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67109

摘要： A solidified body forming step includes: a first step of landing a processing surface of a cooling member on a liquid film to solidify the liquid to be solidified located in an area sandwiched between an upper surface and the processing surface; and a second step of releasing the processing surface from the solidified area solidified in the first step. The processing surface has a lower temperature than a freezing point of the liquid to be solidified. Adhesion between the solidified area and the processing surface is smaller than that between the solidified area and the upper surface.

公开(公告)号：US20180040469A1

公开(公告)日：2018-02-08

申请号：US15226362

申请日：2016-08-02

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Michael J. SEDDON

IPC分类号： H01L21/02 ,  H01L23/544 ,  B24B55/06 ,  H01L21/768 ,  H01L21/66 ,  B24B7/22 ,  H01L21/67 ,  H01L21/78

CPC分类号： H01L21/02013 ,  B24B7/228 ,  B24B55/06 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/304 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/78 ,  H01L22/14 ,  H01L23/544 ,  H01L2223/54453

摘要： A semiconductor wafer has a base material. The semiconductor wafer may have an edge support ring. A grinding phase of a surface of the semiconductor wafer removes a portion of the base material. The grinder is removed from or lifted off the surface of the semiconductor wafer during a separation phase. The surface of the semiconductor wafer and under the grinder is rinsed during the grinding phase and separation phase to remove particles. A rinsing solution is dispensed from a rinsing solution source to rinse the surface of the semiconductor wafer. The rinsing solution source can move in position while dispensing the rinsing solution to rinse the surface of the semiconductor wafer. The grinding phase and separation phase are repeated during the entire grinding operation, when grinding conductive TSVs, or during the final grinding stages, until the final thickness of the semiconductor wafer is achieved.

公开(公告)号：US09786699B2

公开(公告)日：2017-10-10

申请号：US14771208

申请日：2015-07-01

申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.

发明人： Jiangbo Yao

IPC分类号： H01L21/67 ,  H01L27/12 ,  B08B5/00 ,  B08B7/00 ,  B08B15/00 ,  H01L21/02 ,  C03C23/00

CPC分类号： H01L27/1262 ,  B08B5/00 ,  B08B7/0057 ,  B08B15/00 ,  C03C23/002 ,  C03C23/0075 ,  H01L21/02068 ,  H01L21/02082 ,  H01L21/6704 ,  H01L21/67115

摘要： The present invention provides an UV cleaning device of a glass substrate, comprising a lamp box, an UV lamp positioned above inside the lamp box, a transparent shield positioned under the UV lamp, a humidifier positioned under the transparent shield and a power exhaust device under the transparent shield and opposite to the humidifier; in usage, the glass substrate is conveyed to be inside the lamp box, and UV light generated by the UV lamp irradiates on the glass substrate through the shield to clean the glass substrate and a humidity and an oxygen content inside the lamp box are adjusted with the humidifier to make a surface of the glass substrate adsorb one layer of water molecules. The electrons generated as the UV light cleans can be gradually conducted and led out with water molecules to effectively restrain the accumulation of the electrostatic to reduce the phenomenon of electrostatic damage, and meanwhile, the increase of the oxygen content makes the concentration of the activated oxygen atoms increases along with. Accordingly, the result of cleaning the organic objects with the UV light is promoted.

公开(公告)号：US20170186620A1

公开(公告)日：2017-06-29

申请号：US15371707

申请日：2016-12-07

申请人： Tokyo Electron Limited

发明人： Hiroshi Marumoto ,  Hisashi Kawano ,  Hiromi Kiyose ,  Mitsunori Nakamori ,  Kazuyuki Mitsuoka

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01L21/324 ,  H01L21/311 ,  H01L21/306 ,  H01L21/02

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/324 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708

摘要： A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.

公开(公告)号：US20170153550A1

公开(公告)日：2017-06-01

申请号：US15363062

申请日：2016-11-29

申请人： SEMES CO., LTD.

发明人： Jaeyong KIM

IPC分类号： G03F7/16

CPC分类号： H01L21/67051 ,  G03F7/16 ,  H01L21/67 ,  H01L21/6704

摘要： The present disclosure relates to an apparatus and a method for treating a substrate with a liquid. A substrate treating apparatus includes a substrate supporting unit having a supporting plate for supporting a substrate and a bottom liquid supply unit for supplying a liquid to a bottom of the substrate supported by the supporting plate, wherein the bottom liquid supply unit includes a body and a liquid discharge nozzle for discharging a treatment liquid to the bottom of the substrate and coupled to the body and wherein an upper surface of the body includes a drainage hole for draining a liquid remaining in the body. Accordingly a liquid remained in the body may be discharged through the drainage hole.

公开(公告)号：US09653327B2

公开(公告)日：2017-05-16

申请号：US13291286

申请日：2011-11-08

申请人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

发明人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

IPC分类号： H01L21/3065 ,  H01L21/67 ,  C23C16/02 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/6704 ,  C23C16/0245 ,  H01L21/02063 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76814

摘要： Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.

公开(公告)号：US09595433B2

公开(公告)日：2017-03-14

申请号：US13713606

申请日：2012-12-13

申请人： DAINIPPON SCREEN MFG. CO., LTD.

发明人： Hiroaki Takahashi

IPC分类号： B08B3/04 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02054 ,  H01L21/6704 ,  H01L21/67051

摘要： A substrate processing method includes a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying (coating) step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby dry the silicon substrate.

摘要翻译： 基板处理方法包括将第一温度的水供给到硅基板的表面的漂洗工序，将使用该水的冲洗处理应用于硅基板表面，第二温度供水（涂布）工序， 在第二温度供水步骤之后使硅衬底旋转以将硅衬底表面上的水分离到硅衬底的周围的干燥步骤;以及干燥步骤， 从而干燥硅衬底。

公开(公告)号：US09530676B2

公开(公告)日：2016-12-27

申请号：US13483118

申请日：2012-05-30

申请人： Toshio Yokoyama ,  Junji Kunisawa ,  Mitsuru Miyazaki ,  Kenichi Suzuki ,  Hiroshi Sotozaki

发明人： Toshio Yokoyama ,  Junji Kunisawa ,  Mitsuru Miyazaki ,  Kenichi Suzuki ,  Hiroshi Sotozaki

IPC分类号： H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  B25J11/00

CPC分类号： H01L21/67718 ,  B25J11/0095 ,  H01L21/6704 ,  H01L21/67173 ,  H01L21/67196 ,  H01L21/67219 ,  H01L21/67706 ,  H01L21/67742 ,  H01L21/68707

摘要： A substrate processing apparatus can prevent photo-corrosion of, e.g., copper interconnects due to exposure of a surface to be processed of a substrate to light, and can perform processing, such as cleaning, of a substrate surface while preventing photo-corrosion of, e.g., copper interconnects due to exposure to light. The substrate processing apparatus includes a plurality of processing areas housing therein processing units which have been subjected to light shielding processing; and at least one transfer area housing therein a transfer robot and disposed between two adjacent ones of the plurality of processing areas. A light shielding wall is provided between the transfer area and each of the two adjacent processing areas, and a light-shielding maintenance door is provided for the front opening of the transfer area. The processing units are coupled to the light shielding walls in a light-shielding manner.

摘要翻译： 基板处理装置可以防止由于基板的被处理表面暴露于光而导致的铜互连的光腐蚀，并且可以执行基板表面的处理，例如清洁基板表面，同时防止光蚀刻， 例如，由于曝光而导致的铜互连。 基板处理装置包括容纳其中已进行遮光处理的处理单元的多个处理区域; 以及至少一个传送区域，其中容纳有传送机器人并设置在所述多个处理区域中的两个相邻处理区域之间。 在传送区域和两个相邻的处理区域中的每一个之间设置遮光壁，并且为传送区域的前开口设置遮光维护门。 处理单元以遮光方式耦合到遮光壁。

公开(公告)号：US09437448B2

公开(公告)日：2016-09-06

申请号：US14417698

申请日：2013-06-07

申请人： SCREEN Holdings Co., Ltd.

发明人： Hiroki Kiyama

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/225

CPC分类号： H01L21/31111 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02282 ,  H01L21/2252 ,  H01L21/2254 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67086

摘要： A hydrofluoric acid is supplied to a surface of a substrate, and a native oxide film formed on the surface is corroded to be removed, exposing silicon in the surface of the substrate. Then, a rinse solution such as alcohols is supplied to the surface of the substrate, and then, the hydrofluoric acid is washed off from the surface. After that, a dopant solution, which is a dopant-containing chemical solution, is supplied to the surface of the substrate. The dopant solution comes into contact with the surface of the substrate, which is not hydrogen-terminated and has silicon exposed, thereby forming a dopant-containing monolayer thin film on the surface in a short period of time.

摘要翻译： 将氢氟酸供给到基板的表面，并且形成在表面上的自然氧化膜被腐蚀除去，暴露在基板表面的硅。 然后，将诸如醇的冲洗溶液供应到基材的表面，然后从表面洗去氢氟酸。 之后，将作为含掺杂剂的化学溶液的掺杂剂溶液供给到基板的表面。 掺杂剂溶液与基板的表面接触，该表面不是氢封端的，并具有暴露的硅，从而在短时间内在表面上形成含掺杂剂的单层薄膜。

公开(公告)号：US20160211155A1

公开(公告)日：2016-07-21

申请号：US15085678

申请日：2016-03-30

申请人： STMicroelectronics, Inc.

发明人： John H. Zhang

IPC分类号： H01L21/67 ,  H01L21/677

CPC分类号： H01L21/3212 ,  B24B37/005 ,  H01L21/02074 ,  H01L21/6704 ,  H01L21/67207 ,  H01L21/67219 ,  H01L21/67253 ,  H01L21/67706 ,  H01L22/14 ,  H01L22/20

摘要： CMP selectivity, removal rate, and uniformity are controlled both locally and globally by altering electric charge at the wafer surface. Surface charge characterization is performed by an on-board metrology module. Based on a charge profile map, the wafer can be treated in an immersion bath to impart a more positive or negative charge overall, or to neutralize the entire wafer before the CMP operation is performed. If charge hot spots are detected on the wafer, a charge pencil can be used to neutralize localized areas. One type of charge pencil bears a tapered porous polymer tip that is placed in close proximity to the wafer surface. Films present on the wafer absorb ions from, or surrender ions to, the charge pencil tip, by electrostatic forces. The charge pencil can be incorporated into a CMP system to provide an in-situ treatment prior to the planarization step or the slurry removal step.