公开(公告)号：US20120192123A1

公开(公告)日：2012-07-26

申请号：US13402053

申请日：2012-02-22

Applicant: Chun-Hsien Huang ,  Ming-Jui Chen ,  Te-Hung Wu ,  Yu-Shiang Yang

Inventor： Chun-Hsien Huang ,  Ming-Jui Chen ,  Te-Hung Wu ,  Yu-Shiang Yang

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G06F2217/12 ,  Y02P90/265

Abstract: A method to compensate optical proximity correction adapted for a photolithography process includes providing an integrated circuit (IC) layout. The IC layout includes active regions, a shallow trench isolation (STI) region and ion implant regions overlapped with a part of the STI region and at least a part of the active regions. Subsequently, at least a photoresist line width compensation region disposed in the STI region is acquired in a photoresist covering region outside the ion implant regions according to the IC layout. Afterwards, the IC layout is corrected according to a width of the photoresist line width compensation region, a length of a side of the active region facing a side of the photoresist line width compensation region and a distance from the side of the photoresist line width compensation region to the active region facing the side. Then, the corrected IC layout is transferred to a photomask.

Abstract translation: 补偿适用于光刻工艺的光学邻近校正的方法包括提供集成电路（IC）布局。 IC布局包括有源区域，浅沟槽隔离（STI）区域和与STI区域的一部分和至少一部分有源区域重叠的离子注入区域。 随后，根据IC布局，在离子注入区域外的光致抗蚀剂覆盖区域中至少获取设置在STI区域中的光致抗蚀剂线宽度补偿区域。 然后，根据光致抗蚀剂线宽度补偿区域的宽度，有源区域的面对光致抗蚀剂线宽度补偿区域的一侧的长度和距光致抗蚀剂线宽度补偿侧的距离来校正IC布局 区域到面向侧面的活动区域。 然后，将校正的IC布局转移到光掩模。

公开(公告)号：US08151221B2

公开(公告)日：2012-04-03

申请号：US12769873

申请日：2010-04-29

Applicant: Chun-Hsien Huang ,  Ming-Jui Chen ,  Te-Hung Wu ,  Yu-Shiang Yang

Inventor： Chun-Hsien Huang ,  Ming-Jui Chen ,  Te-Hung Wu ,  Yu-Shiang Yang

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G06F2217/12 ,  Y02P90/265

Abstract: A method to compensate optical proximity correction adapted for a photolithography process is provided. An integrated circuit (IC) layout firstly is provided. The IC layout includes active regions and a shallow trench isolation (STI) region. The STI region is a region except the active regions. The IC layout further includes ion implant regions which are overlapped with a part of the STI region and at least a part of the active regions. Subsequently, at least a photoresist line width compensation region is acquired in a photoresist covering region outside the ion implant regions according to the IC layout. Each photoresist line width compensation region is disposed in the STI region. Afterwards, the IC layout is corrected according to a width of the photoresist line width compensation region, a length of a side of the active region facing a side of the photoresist line width compensation region and a distance from the side of the photoresist line width compensation region to the active region facing the side. Finally, the corrected IC layout is transferred to a photomask.

Abstract translation: 提供了一种用于补偿适于光刻工艺的光学邻近校正的方法。 首先提供集成电路（IC）布局。 IC布局包括有源区和浅沟隔离（STI）区。 STI区域是除活性区域之外的区域。 IC布局还包括与STI区域的一部分和有效区域的至少一部分重叠的离子注入区域。 随后，根据IC布局，在离子注入区域外的光致抗蚀剂覆盖区域中至少获得光致抗蚀剂线宽度补偿区域。 每个光致抗蚀剂线宽度补偿区域设置在STI区域中。 然后，根据光致抗蚀剂线宽度补偿区域的宽度，有源区域的面对光致抗蚀剂线宽度补偿区域的一侧的长度和距光致抗蚀剂线宽度补偿侧的距离来校正IC布局 区域到面向侧面的活动区域。 最后，将校正的IC布局转移到光掩模。

公开(公告)号：US07913196B2

公开(公告)日：2011-03-22

申请号：US11752310

申请日：2007-05-23

Applicant: Te-Hung Wu ,  Chia-Wei Huang ,  Chuen Huei Yang ,  Sheng-Yuan Huang ,  Pei-Ru Tsai ,  Chih-Hao Wu

Inventor： Te-Hung Wu ,  Chia-Wei Huang ,  Chuen Huei Yang ,  Sheng-Yuan Huang ,  Pei-Ru Tsai ,  Chih-Hao Wu

IPC: G06F17/50

CPC classification number: G06F17/5081

Abstract: A method of verifying a layout pattern comprises separately steps of obtaining a simulated pattern at a lower portion of a film by using a layout pattern as a mask to transfer the layout pattern to the film, and obtaining a simulated pattern at an upper portion of the film by using the layout pattern as a mask to transfer the layout pattern to the film. The layout pattern is verified according to the upper and lower simulated patterns.

Abstract translation: 验证布局图案的方法包括单独的步骤，通过使用布局图案作为掩模，在胶片的下部获得模拟图案，以将布局图案转印到胶片上，以及在胶片的上部获得模拟图案 通过使用布局图案作为掩模将电影布局布局转移到电影中。 根据上下模拟图案验证布局图案。

公开(公告)号：US20100131914A1

公开(公告)日：2010-05-27

申请号：US12324858

申请日：2008-11-27

Applicant: Te-Hung Wu ,  Sheng-Yuan Huang ,  Cheng-Te Wang ,  Chia-Wei Huang ,  Ping-I Hsieh ,  Po-I Lee ,  Chuen Huei Yang ,  Pei-Ru Tsai

Inventor： Te-Hung Wu ,  Sheng-Yuan Huang ,  Cheng-Te Wang ,  Chia-Wei Huang ,  Ping-I Hsieh ,  Po-I Lee ,  Chuen Huei Yang ,  Pei-Ru Tsai

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method to determine a process window is disclosed. First, a pattern data is provided. Second, a bias set is determined. Then, a resizing procedure is performed on the pattern data in accordance with the bias set to obtain a usable final resized pattern to be a target pattern of changed area. The final resized pattern is consistent with a minimum spacing rule, a contact to poly rule and a contact to metal rule. Accordingly, the target pattern is output.

Abstract translation: 公开了一种确定处理窗口的方法。 首先，提供图案数据。 其次，确定偏差集。 然后，根据偏置设置对图案数据执行调整大小程序，以获得可用的最终调整尺寸图案作为改变区域的目标图案。 最终调整大小的模式与最小间距规则，与多边规则的联系以及与金属规则的联系是一致的。 因此，输出目标图案。

公开(公告)号：US20100036644A1

公开(公告)日：2010-02-11

申请号：US12188192

申请日：2008-08-07

Applicant: Yu-Shiang Yang ,  Te-Hung Wu ,  Yung-Feng Cheng ,  Chuen Huei Yang ,  Hsiang-Yun Huang ,  Hui-Fang Kuo ,  Shih-Ming Kuo ,  Lun-Hung Chen

Inventor： Yu-Shiang Yang ,  Te-Hung Wu ,  Yung-Feng Cheng ,  Chuen Huei Yang ,  Hsiang-Yun Huang ,  Hui-Fang Kuo ,  Shih-Ming Kuo ,  Lun-Hung Chen

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

Abstract: A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output.

Abstract translation: 公开了一种选择性地修改布局图案的方法。 首先，提供包括至少第一组和第二组的布局图案，其中第一组和第二组中的每一个分别包括多个构件。 其次，分别对第一组和第二组的所有成员进行模拟程序和修改程序，以获得修改后的第一组和第二组。 然后，经修改的第一组和第二组被修正为目标。 之后，输出了包括目标修正的第一组和目标修正的第二组的布局模式。

公开(公告)号：US07669153B2

公开(公告)日：2010-02-23

申请号：US11742372

申请日：2007-04-30

Applicant: Te-Hung Wu ,  Chuen-Huei Yang ,  Sheng-Yuan Huang ,  Chia-Wei Huang ,  Pei-Ru Tsai

Inventor： Te-Hung Wu ,  Chuen-Huei Yang ,  Sheng-Yuan Huang ,  Chia-Wei Huang ,  Pei-Ru Tsai

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method for correcting a photomask pattern is provided. The correcting method performs a verification of a focus-exposure matrix (FEM) and an overlay variation on a layout area having contact holes or vias in a layout pattern so as to generate a hint information. The layout pattern of the photomask is corrected according to the hint information to prevent the contact holes or vias from being exposed in arrangement to corresponding metal layer, poly layer, or diffusion layer.

Abstract translation: 提供了一种用于校正光掩模图案的方法。 校正方法在布局图案中对具有接触孔或通孔的布局区域执行聚焦曝光矩阵（FEM）和覆盖变化的验证，以产生提示信息。 根据提示信息校正光掩模的布局图案，以防止接触孔或通孔暴露于相应的金属层，多晶硅层或扩散层。

公开(公告)号：US07664614B2

公开(公告)日：2010-02-16

申请号：US11934524

申请日：2007-11-02

Applicant: Te-Hung Wu ,  Shih-Ming Yen ,  Chih-Hao Wu ,  Chuen-Huei Yang

Inventor： Te-Hung Wu ,  Shih-Ming Yen ,  Chih-Hao Wu ,  Chuen-Huei Yang

IPC: G06F19/00 ,  G06F17/40

CPC classification number: G03F1/84

Abstract: A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.

Abstract translation: 提供了一种检查面罩缺陷的方法。 在该方法中，创建用于存储多个虚拟模拟模型的数据库。 虚拟模拟模型由在掩模图案转移到晶片上的光致抗蚀剂层的多个因素确定，包括光学效应和化学效应。 获取掩模缺陷图像。 从数据库中的至少一个虚拟仿真模型生成掩模缺陷图像的模拟轮廓。 接下来，确定掩模的可接受性。

公开(公告)号：US08321822B2

公开(公告)日：2012-11-27

申请号：US12788375

申请日：2010-05-27

Applicant: Yu-Shiang Yang ,  Ming-Jui Chen ,  Te-Hung Wu

Inventor： Yu-Shiang Yang ,  Ming-Jui Chen ,  Te-Hung Wu

IPC: G06F17/50 ,  G03F1/00 ,  G03C5/00

CPC classification number: G06F17/5081 ,  G03F1/36

Abstract: A method optical proximity correction includes the following steps. First, a layout of an integrated circuit with an exposure intensity specification is provided. The integrated circuit includes a plurality of patterns and each pattern has an exposure intensity distribution. Second, a quadratic polynomial equation of each exposure intensity distribution is approximated. Third, a local extreme intensity of each exposure intensity distribution is computed by fitting the quadratic polynomial equation. Fourth, the local extreme intensity is determined whether violating the exposure intensity specification or not. Then, the layout is corrected when the local extreme intensity violates the exposure intensity specification.

Abstract translation: 一种光学邻近校正方法包括以下步骤。 首先，提供具有曝光强度规格的集成电路的布局。 集成电路包括多个图案，并且每个图案具有曝光强度分布。 其次，近似每个曝光强度分布的二次多项式方程。 第三，通过拟合二次多项式方程来计算每个曝光强度分布的局部极值强度。 第四，确定是否违反曝光强度规格的局部极端强度。 然后，当局部极端强度违反曝光强度规格时，布局被修正。

公开(公告)号：US08321820B2

公开(公告)日：2012-11-27

申请号：US13402053

申请日：2012-02-22

Applicant: Chun-Hsien Huang ,  Ming-Jui Chen ,  Te-Hung Wu ,  Yu-Shiang Yang

Inventor： Chun-Hsien Huang ,  Ming-Jui Chen ,  Te-Hung Wu ,  Yu-Shiang Yang

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G06F2217/12 ,  Y02P90/265

Abstract: A method to compensate optical proximity correction adapted for a photolithography process includes providing an integrated circuit (IC) layout. The IC layout includes active regions, a shallow trench isolation (STI) region and ion implant regions overlapped with a part of the STI region and at least a part of the active regions. Subsequently, at least a photoresist line width compensation region disposed in the STI region is acquired in a photoresist covering region outside the ion implant regions according to the IC layout. Afterwards, the IC layout is corrected according to a width of the photoresist line width compensation region, a length of a side of the active region facing a side of the photoresist line width compensation region and a distance from the side of the photoresist line width compensation region to the active region facing the side. Then, the corrected IC layout is transferred to a photomask.

Abstract translation: 补偿适用于光刻工艺的光学邻近校正的方法包括提供集成电路（IC）布局。 IC布局包括有源区域，浅沟槽隔离（STI）区域和与STI区域的一部分和至少一部分有源区域重叠的离子注入区域。 随后，根据IC布局，在离子注入区域外的光致抗蚀剂覆盖区域中至少获取设置在STI区域中的光致抗蚀剂线宽度补偿区域。 然后，根据光致抗蚀剂线宽度补偿区域的宽度，有源区域的面对光致抗蚀剂线宽度补偿区域的一侧的长度和距光致抗蚀剂线宽度补偿侧的距离来校正IC布局 区域到面向侧面的活动区域。 然后，将校正的IC布局转移到光掩模。

公开(公告)号：US08225237B2

公开(公告)日：2012-07-17

申请号：US12324858

申请日：2008-11-27

Applicant: Te-Hung Wu ,  Sheng-Yuan Huang ,  Cheng-Te Wang ,  Chia-Wei Huang ,  Ping-I Hsieh ,  Po-I Lee ,  Chuen Huei Yang ,  Pei-Ru Tsai

Inventor： Te-Hung Wu ,  Sheng-Yuan Huang ,  Cheng-Te Wang ,  Chia-Wei Huang ,  Ping-I Hsieh ,  Po-I Lee ,  Chuen Huei Yang ,  Pei-Ru Tsai

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method to determine a process window is disclosed. First, a pattern data is provided. Second, a bias set is determined. Then, a resizing procedure is performed on the pattern data in accordance with the bias set to obtain a usable final resized pattern to be a target pattern of changed area. The final resized pattern is consistent with a minimum spacing rule, a contact to poly rule and a contact to metal rule. Accordingly, the target pattern is output.

Abstract translation: 公开了一种确定处理窗口的方法。 首先，提供图案数据。 其次，确定偏差集。 然后，根据偏置设置对图案数据执行调整大小程序，以获得可用的最终调整尺寸图案作为改变区域的目标图案。 最终调整大小的模式与最小间距规则，与多边规则的联系以及与金属规则的联系是一致的。 因此，输出目标图案。