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公开(公告)号:US20120247529A1
公开(公告)日:2012-10-04
申请号:US13193470
申请日:2011-07-28
申请人: Lingjun Zhang , Jian Shen , Xusheng Wang , Jian Wu , Feng Zhang
发明人: Lingjun Zhang , Jian Shen , Xusheng Wang , Jian Wu , Feng Zhang
IPC分类号: H01L31/05 , H01L31/0224
CPC分类号: H01L31/02245 , H01L31/0516 , Y02E10/50
摘要: Back contact solar cell modules and methods of manufacturing the same. The solar cell module comprises a back surface with a plurality of first electrodes and a plurality of second electrodes formed thereon, the plurality of first electrodes and the plurality of second electrodes being of opposite polarities, the back surface being configured to form an electric field thereon of the opposite polarity as the plurality of first electrodes; a first connecting strip electrically connecting the plurality of first electrodes; and an insulative member between the back surface and the first connecting strip.
摘要翻译: 背面接触式太阳能电池模块及其制造方法。 太阳能电池模块包括具有多个第一电极和形成在其上的多个第二电极的后表面,所述多个第一电极和多个第二电极具有相反的极性,所述后表面被配置为在其上形成电场 与所述多个第一电极相反极性; 电连接所述多个第一电极的第一连接条; 以及在所述后表面和所述第一连接条之间的绝缘构件。
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公开(公告)号:USD658577S1
公开(公告)日:2012-05-01
申请号:US29393634
申请日:2011-06-07
申请人: Lingjun Zhang , Weixu Long , Feng Zhang , Xusheng Wang
设计人: Lingjun Zhang , Weixu Long , Feng Zhang , Xusheng Wang
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公开(公告)号:US08916410B2
公开(公告)日:2014-12-23
申请号:US13193458
申请日:2011-07-28
申请人: Lingjun Zhang , Feng Zhang , Jian Wu , Xusheng Wang
发明人: Lingjun Zhang , Feng Zhang , Jian Wu , Xusheng Wang
IPC分类号: H01L21/00 , H01L31/0224 , H01L31/18
CPC分类号: H01L31/18 , H01L31/022441 , H01L31/02245 , H01L31/1804 , Y02E10/542 , Y02E10/547 , Y02P70/521
摘要: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.
摘要翻译: 提供了制造光电流转换器装置的过程。 这些工艺可以用于对位于顶表面上的仅位于电池顶表面上的PN结的电流转换器装置进行光照,并且沿着位于顶部的通孔的内表面的一部分对称地或不对称地 通孔的表面和整个内表面,或位于顶表面,通孔的完整内表面和电池底表面的一部分。 这些过程可以通过蚀刻发射体来隔离所需的PN结,在形成发射体之后使用阻挡层来保护发射体的部分免受蚀刻,或者使用阻挡层来防止发射体在 底物。
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4.
公开(公告)号:US20120298192A1
公开(公告)日:2012-11-29
申请号:US13193433
申请日:2011-07-28
申请人: Lingjun ZHANG , Jian WU , Feng ZHANG , Xusheng WANG
发明人: Lingjun ZHANG , Jian WU , Feng ZHANG , Xusheng WANG
IPC分类号: H01L31/0216 , H01L31/04 , H01L31/0236 , H01L31/0224
CPC分类号: H01L31/18 , H01L31/022441 , H01L31/02245 , H01L31/1804 , Y02E10/542 , Y02E10/547 , Y02P70/521
摘要: Light to current converter devices, such as solar cells, are disclosed. The devices may include via holes extending through the cell substrate and may include through-hole electrodes within the via holes. The through-hole electrodes may be made from one or more materials and may be hollow, partially hollow, or fully filled. Front and rear electrodes may also be formed on the device and can be made of the same or different materials as the through-hole electrode. The devices may include emitters located only on the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, or located on the top surface and full inner surface of the via holes. Processes for making light to current converter devices are also disclosed.
摘要翻译: 公开了诸如太阳能电池的光到电流转换器装置。 器件可以包括延伸穿过电池基板的通孔,并且可以在通孔内包括通孔电极。 通孔电极可以由一种或多种材料制成,并且可以是中空的,部分中空的或完全填充的。 前电极和后电极也可以形成在器件上,并且可以由与通孔电极相同或不同的材料制成。 这些装置可以包括仅位于电池顶表面上的发射器,位于顶表面上,沿着通孔的内表面的一部分对称地或不对称地位于通孔的顶表面和整个内表面上 。 还公开了用于制造光到电流转换器装置的过程。
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公开(公告)号:US20090093081A1
公开(公告)日:2009-04-09
申请号:US12286942
申请日:2008-10-03
申请人: Lingjun Zhang , Yunxiang Zuo
发明人: Lingjun Zhang , Yunxiang Zuo
IPC分类号: H01L21/00
CPC分类号: H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950° C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride atmosphere at 850-1050° C. to form a 10 to 30 nm thick oxide layer on the surface of said silicon wafer, diffusing from a phosphorus source at 850-900° C., until a block resistance of a material surface is controlled at 40 to 50 ohms, and the junction depth is at 0.2 to 1.0 microns, and annealing in a nitrogen atmosphere at 700-750° C. for thirty to sixty minutes to complete the phosphorus diffusion of said mono-crystalline silicon wafer. This invention allows the use of 4 N˜5 N mono-crystalline silicon as the material for manufacturing solar cells, so, the low purity material such as metallurgical silicon can be used, which greatly reduces the cost of materials.
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公开(公告)号:US09153713B2
公开(公告)日:2015-10-06
申请号:US13193470
申请日:2011-07-28
申请人: Lingjun Zhang , Jian Shen , Xusheng Wang , Jian Wu , Feng Zhang
发明人: Lingjun Zhang , Jian Shen , Xusheng Wang , Jian Wu , Feng Zhang
IPC分类号: H01L31/0224 , H01L31/05
CPC分类号: H01L31/02245 , H01L31/0516 , Y02E10/50
摘要: Back contact solar cell modules and methods of manufacturing the same. The solar cell module comprises a back surface with a plurality of first electrodes and a plurality of second electrodes formed thereon, the plurality of first electrodes and the plurality of second electrodes being of opposite polarities, the back surface being configured to form an electric field thereon of the opposite polarity as the plurality of first electrodes; a first connecting strip electrically connecting the plurality of first electrodes; and an insulative member between the back surface and the first connecting strip.
摘要翻译: 背面接触式太阳能电池模块及其制造方法。 太阳能电池模块包括具有多个第一电极和形成在其上的多个第二电极的后表面,所述多个第一电极和多个第二电极具有相反的极性,所述后表面被配置为在其上形成电场 与所述多个第一电极相反极性; 电连接所述多个第一电极的第一连接条; 以及在所述后表面和所述第一连接条之间的绝缘构件。
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公开(公告)号:US20120301997A1
公开(公告)日:2012-11-29
申请号:US13193458
申请日:2011-07-28
申请人: Lingjun ZHANG , Feng Zhang , Jian Wu , Xusheng Wang
发明人: Lingjun ZHANG , Feng Zhang , Jian Wu , Xusheng Wang
IPC分类号: H01L31/18
CPC分类号: H01L31/18 , H01L31/022441 , H01L31/02245 , H01L31/1804 , Y02E10/542 , Y02E10/547 , Y02P70/521
摘要: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.
摘要翻译: 提供了制造光电流转换器装置的过程。 这些工艺可以用于对位于顶表面上的仅位于电池顶表面上的PN结的电流转换器装置进行光照,并且沿着位于顶部的通孔的内表面的一部分对称地或不对称地 通孔的表面和整个内表面,或位于顶表面,通孔的完整内表面和电池底表面的一部分。 这些过程可以通过蚀刻发射体来隔离所需的PN结,在形成发射体之后使用阻挡层来保护发射体的部分免受蚀刻,或者使用阻挡层来防止发射体在 底物。
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公开(公告)号:US07611977B2
公开(公告)日:2009-11-03
申请号:US12286942
申请日:2008-10-03
申请人: Lingjun Zhang , Yunxiang Zuo
发明人: Lingjun Zhang , Yunxiang Zuo
IPC分类号: H01L21/22
CPC分类号: H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950° C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride atmosphere at 850-1050° C. to form a 10 to 30 nm thick oxide layer on the surface of said silicon wafer, diffusing from a phosphorus source at 850-900° C., until a block resistance of a material surface is controlled at 40 to 50 ohms, and the junction depth is at 0.2 to 1.0 microns, and annealing in a nitrogen atmosphere at 700-750° C. for thirty to sixty minutes to complete the phosphorus diffusion of said mono-crystalline silicon wafer. This invention allows the use of 4 N˜5 N mono-crystalline silicon as the material for manufacturing solar cells, so, the low purity material such as metallurgical silicon can be used, which greatly reduces the cost of materials.
摘要翻译: 本发明公开了一种用于制造太阳能电池的磷扩散方法,包括在900-950℃的氮气气氛中将单晶硅晶片退火二十至三十分钟,在850-1050℃的氯化氢气氛中进行氧化处理 在所述硅晶片的表面上形成10至30nm厚的氧化物层,在850-900℃从磷源扩散,直到材料表面的阻挡电阻控制在40至50欧姆, 并且结深度为0.2-1.0微米,并在氮气气氛中在700-750℃退火三十到六十分钟以完成所述单晶硅晶片的磷扩散。 本发明允许使用4N〜5N单晶硅作为制造太阳能电池的材料,因此,可以使用诸如冶金硅的低纯度材料,这大大降低了材料的成本。
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9.
公开(公告)号:US09281435B2
公开(公告)日:2016-03-08
申请号:US13193433
申请日:2011-07-28
申请人: Lingjun Zhang , Jian Wu , Feng Zhang , Xusheng Wang
发明人: Lingjun Zhang , Jian Wu , Feng Zhang , Xusheng Wang
IPC分类号: H01L31/00 , H01L31/18 , H01L31/0224
CPC分类号: H01L31/18 , H01L31/022441 , H01L31/02245 , H01L31/1804 , Y02E10/542 , Y02E10/547 , Y02P70/521
摘要: Light to current converter devices, such as solar cells, are disclosed. The devices may include via holes extending through the cell substrate and may include through-hole electrodes within the via holes. The through-hole electrodes may be made from one or more materials and may be hollow, partially hollow, or fully filled. Front and rear electrodes may also be formed on the device and can be made of the same or different materials as the through-hole electrode. The devices may include emitters located only on the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, or located on the top surface and full inner surface of the via holes. Processes for making light to current converter devices are also disclosed.
摘要翻译: 公开了诸如太阳能电池的光电转换器装置。 器件可以包括延伸穿过电池基板的通孔,并且可以在通孔内包括通孔电极。 通孔电极可以由一种或多种材料制成,并且可以是中空的,部分中空的或完全填充的。 前电极和后电极也可以形成在器件上,并且可以由与通孔电极相同或不同的材料制成。 这些装置可以包括仅位于电池顶表面上的发射器,位于顶表面上,沿着通孔的内表面的一部分对称地或不对称地位于通孔的顶表面和整个内表面上 。 还公开了用于制造光到电流转换器装置的过程。
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