公开(公告)号：US20240079515A1

公开(公告)日：2024-03-07

申请号：US18388286

申请日：2023-11-09

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Alexander FREY ,  Benjamin HAGEDORN

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0384

CPC classification number: H01L31/1808 ,  H01L31/02167 ,  H01L31/02245 ,  H01L31/0384 ,  H01L31/1852 ,  H01L31/1868 ,  Y02E10/544

Abstract: A method for structuring an insulating layer on a semiconductor wafer includes providing a semiconductor wafer with a top, a bottom and includes multiple solar cell stacks, wherein each solar cell stack is a Ge substrate, which forms the bottom of the semiconductor wafer, a Ge subcell and at least two III-V subcells, in the above order, and at least one passage opening, which extends from the top to the bottom of the semiconductor wafer and has a connected side wall, an insulating layer two-dimensionally deposited on the top of the semiconductor wafer, on the side wall of the passage opening and/or on the bottom of the semiconductor wafer, and the deposition of an etch-resistant filling material by means of a printing process on an area of the top which include the passage opening, and into the passage opening.

公开(公告)号：US11881532B2

公开(公告)日：2024-01-23

申请号：US17101494

申请日：2020-11-23

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Wolfgang Koestler ,  Alexander Frey

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0687 ,  H01L31/18

CPC classification number: H01L31/02168 ,  H01L31/02245 ,  H01L31/18 ,  H01L31/0687

Abstract: A stacked multi-junction solar cell with a front side contacted through the rear side and having a solar cell stack having a Ge substrate layer, a Ge subcell, and at least two III-V subcells, with a through contact opening, a front terminal contact, a rear terminal contact, an antireflection layer formed on a part of the front side of the multi-junction solar cell, a dielectric insulating layer, and a contact layer. The dielectric insulating layer covers the antireflection layer, an edge region of a top of the front terminal contact, a lateral surface of the through contact opening, and a region of the rear side of the solar cell stack adjacent to the through contact opening. The contact layer from a region of the top of the front terminal contact that is not covered by the dielectric insulating layer through the through contact opening to the rear side.

公开(公告)号：US20230246118A1

公开(公告)日：2023-08-03

申请号：US17913088

申请日：2021-03-24

Applicant: SINGULUS TECHNOLOGIES AG

Inventor： Benjamin Mandlmeier ,  Simon Hübner ,  Peter Wohlfart

IPC: H01L31/20 ,  H01L31/18

CPC classification number: H01L31/208 ,  H01L31/206 ,  H01L31/1868 ,  H01L31/1864 ,  H01L31/02245

Abstract: The present invention is directed to a method as well as to a machine for producing a starting material for a silicon solar cell with passivated contacts.

公开(公告)号：US20180277700A1

公开(公告)日：2018-09-27

申请号：US15991702

申请日：2018-05-29

Applicant: KANEKA CORPORATION

Inventor： Gensuke KOIZUMI ,  Daisuke ADACHI ,  Kunihiro NAKANO

IPC: H01L31/05 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/0504 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/02245 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/04 ,  H01L31/05 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/0747 ,  H01L31/1884 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell comprises forming a first conductivity-type silicon-based thin-film on a first surface of a substrate; forming a second conductivity-type silicon-based thin-film different from the first conductivity-type silicon-based thin-film, on a second surface of the substrate that is opposite to the first surface of the substrate; forming a first transparent electrode layer on the first conductivity-type silicon-based thin-film; and forming a second transparent electrode layer on the second conductivity-type silicon-based thin-film; forming a first metal seed layer on a first transparent electrode layer; forming a second metal seed layer on a second transparent electrode layer; forming a third metal seed layer on a peripheral edge and on an end-edge of the second conductivity-type silicon-based thin-film; forming a first plating layer on the first metal seed layer and a third plating layer on the third metal seed layer simultaneously by an electroplating method.

公开(公告)号：US10074766B2

公开(公告)日：2018-09-11

申请号：US15119376

申请日：2015-02-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin Von Malm ,  Alexander F. Pfeuffer ,  Tansen Varghese ,  Philipp Kreuter

IPC: H01L31/18 ,  H01L31/0224 ,  H01L33/00 ,  H01L33/38 ,  H01L31/0352 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/056 ,  H01L23/544 ,  H01L31/0304 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L31/1892 ,  H01L21/76898 ,  H01L23/544 ,  H01L31/02245 ,  H01L31/022466 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/186 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L2223/5446 ,  H01L2933/0016 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

Abstract: A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.

公开(公告)号：US10002985B2

公开(公告)日：2018-06-19

申请号：US15261365

申请日：2016-09-09

Applicant: LG ELECTRONICS INC.

Inventor： Joonhan Kwon ,  Hyeyoung Yang ,  Bojoong Kim

IPC: B21D53/06 ,  H01L31/05 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/068 ,  H01L31/049 ,  H01L31/0216

CPC classification number: H01L31/0516 ,  H01L31/0216 ,  H01L31/02245 ,  H01L31/022458 ,  H01L31/0481 ,  H01L31/049 ,  H01L31/0512 ,  H01L31/0682 ,  Y02E10/547 ,  Y10T29/49355

Abstract: A solar cell module and a method for manufacturing the same are disclosed. The solar cell module includes solar cells each including a semiconductor substrate, and first electrodes and second electrodes extending in a first direction on a surface of the semiconductor substrate, conductive lines extended in a second direction crossing the first direction on the surface of the semiconductor substrate and connected to the first electrodes or the second electrodes through a conductive adhesive, and an insulating adhesive portion extending in the first direction on at least a portion of the surface of the semiconductor substrate, on which the conductive lines are disposed, and fixing the conductive lines to the semiconductor substrate and the first and second electrodes. The insulating adhesive portion is attached up to an upper part and a side of at least a portion of each conductive line.

公开(公告)号：US20170186901A1

公开(公告)日：2017-06-29

申请号：US15300289

申请日：2015-03-31

Applicant: Stichting Energieonderzoek Centrum Nederland

Inventor： Evert Eugène Bende ,  Bas Bernardus van Aken ,  Nicolas Guillevin ,  Markus Johan Jansen ,  Ilkay Cesar

IPC: H01L31/05 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/044

CPC classification number: H01L31/0443 ,  H01L27/1421 ,  H01L31/02013 ,  H01L31/022441 ,  H01L31/02245 ,  H01L31/022458 ,  H01L31/044 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0508 ,  H01L31/0516 ,  Y02E10/50

Abstract: Back side connection layer for a photo-voltaic module with a plurality of PV-cells (1, 2). The PV-cells (1, 2) are of a type having a plurality of back side contacts (11, 12). A by-pass diode connection path (6) is formed in the back side connection layer (3) along an edge direction of two adjacent cells (1, 2) with a straight or meandering pattern around outer contacts (4, 5) of the plurality of back side contacts (11, 12) of the two adjacent cells (1, 2).

公开(公告)号：US20170110604A1

公开(公告)日：2017-04-20

申请号：US15337590

申请日：2016-10-28

Applicant: Stephen J. Fonash

Inventor： Stephen J. Fonash

IPC: H01L31/0224 ,  H01L31/056

CPC classification number: H01L31/022441 ,  H01L31/022433 ,  H01L31/02245 ,  H01L31/0236 ,  H01L31/0392 ,  H01L31/056 ,  Y02E10/52

Abstract: A photovoltaic or light detecting device is provided that includes a periodic array of dome or dome-like protrusions at the light impingement surface and three forms of reflector/back electrode at the device back. The beneficial interaction between an appropriately designed top protrusion array and these reflector/electrode back contacts (R/EBCs) serve (1) to refract the incoming light thereby providing photons with an advantageous larger momentum component parallel to the plane of the back (R/EBC) contact and (2) to provide optical impedance matching for the short wavelength incoming light. The reflector/back electrode operates as a back light reflector and counter electrode to the periodic array of dome or dome-like structures. A substrate supports the reflector/back electrode.

公开(公告)号：US09627566B2

公开(公告)日：2017-04-18

申请号：US14954030

申请日：2015-11-30

Applicant: Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

Inventor： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/0236 ,  H01L31/0745

CPC classification number: H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20160118513A1

公开(公告)日：2016-04-28

申请号：US14890397

申请日：2013-05-13

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Shuichiro ADACHI ,  Masato YOSHIDA ,  Takeshi NOJIRI ,  Yasushi KURATA ,  Yoshiaki KURIHARA ,  Takahiko KATO

IPC: H01L31/0224

CPC classification number: H01L31/022425 ,  C03C3/0745 ,  C03C3/21 ,  H01B1/22 ,  H01L31/022441 ,  H01L31/02245 ,  H01L31/022458 ,  Y02E10/50

Abstract: A composition for forming an electrode includes a phosphorus-containing copper alloy particle, a tin-containing particle, a specific metal element M-containing particle, a glass particle, a solvent and a resin, in which M is at least one selected from the group consisting of Li, Be, Na, Mg, K, Ca, Rb, Sr, Cs, Ba, Fr, Ra, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Pd, Ag, Cd, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Al, Ga, Ge, In, Sb, Tl, Pb, Bi and Po.

Abstract translation: 用于形成电极的组合物包括含磷铜合金颗粒，含锡颗粒，特定金属元素M的颗粒，玻璃颗粒，溶剂和树脂，其中M是选自 由Li，Be，Na，Mg，K，Ca，Rb，Sr，Cs，Ba，Fr，Ra，Sc，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Y，Zr组成的组 ，Nb，Mo，Tc，Ru，Pd，Ag，Cd，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Hf，Ta， ，Re，Os，Ir，Pt，Au，Hg，Al，Ga，Ge，In，Sb，Tl，Pb，Bi和Po。