公开(公告)号：US06261726B1

公开(公告)日：2001-07-17

申请号：US09455570

申请日：1999-12-06

申请人： Cameron J. Brooks ,  Michael J. Lercel ,  Lynn A. Powers

发明人： Cameron J. Brooks ,  Michael J. Lercel ,  Lynn A. Powers

IPC分类号： G03F900

CPC分类号： G03F1/20 ,  H01J2237/0453 ,  H01J2237/31794

摘要： A stencil or scatterer mask for use with charged particle beam lithography such as projection electron-beam lithography comprises a membrane layer of a material having a Young's modulus of at least about 400 GPa and support struts supporting a surface of the membrane. The struts form and surrounding a plurality of discrete membrane areas of different aspect ratios aligned to design regions of an integrated circuit. The discrete membrane areas have different aspect ratios range from about 1:1 to about 12:1, and the discrete membrane areas have different size surface areas. The membrane is preferably silicon carbide, diamond, diamond-like carbon, amorphous carbon, carbon nitride or boron nitride. When used in scatterer masks, the ratio of discrete membrane area to membrane thickness is at least about 0.18 mm2/nm. When used in stencil masks, the ratio of discrete membrane area to membrane thickness is at least about 1.0 mm2/nm. The stencil mask is made by depositing a diamond membrane film patterned with a hardmask layer on a substrate, depositing an etch stop layer adjacent the diamond film, and forming supporting struts surrounding a plurality of discrete areas of the membrane film. The method then includes depositing a pattern over the membrane film within the discrete membrane film areas, the pattern conforming to one or more desired circuit elements, and etching the membrane film with a reactive ion etch containing oxygen to form openings in the membrane film.

摘要翻译： 用于带电粒子束光刻（例如投影电子束光刻）的模板或散射体掩模包括具有至少约400GPa的杨氏模量的材料的膜层和支撑膜表面的支撑支柱。 支柱形成并围绕与集成电路的设计区域对准的不同纵横比的多个离散膜区域。 离散膜区域具有从约1:1至约12:1范围内的不同纵横比，并且离散膜区域具有不同尺寸的表面积。 膜优选为碳化硅，金刚石，类金刚石碳，无定形碳，碳氮化物或氮化硼。 当用于散射体掩模时，离散膜面积与膜厚度的比率至少为约0.18mm 2 / nm。 当用于模板掩模时，离散膜面积与膜厚度的比率至少为约1.0mm 2 / nm。 模板掩模通过在衬底上沉积用硬掩模层图案化的金刚石膜膜，沉积与金刚石膜相邻的蚀刻停止层，以及形成围绕膜膜的多个离散区域的支撑柱而制成。 该方法然后包括在离散膜膜区域内的膜膜上沉积图案，该图案符合一个或多个期望的电路元件，以及用包含氧的反应离子蚀刻蚀刻膜膜以在膜膜中形成开口。