公开(公告)号：US4810664A

公开(公告)日：1989-03-07

申请号：US896560

申请日：1986-08-14

申请人： Theodore I. Kamins ,  Jean-Pierre Colinge ,  Paul J. Marcoux ,  Lynn M. Roylance ,  John L. Moll

发明人： Theodore I. Kamins ,  Jean-Pierre Colinge ,  Paul J. Marcoux ,  Lynn M. Roylance ,  John L. Moll

IPC分类号： H01L27/12 ,  H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L21/762 ,  H01L29/78 ,  H01L21/76

CPC分类号： H01L21/76264 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/76267 ,  H01L21/76281

摘要： A method for producing buried oxide layers in selected portions of a semiconductor substrate including the steps of applying a patterned mask made from a high-density material over a semiconductor substrate and selectively forming buried oxide layers by oxygen ion implantation. The high-density material of the mask is preferably tungsten, but can also be made from other suitable materials such as silicon nitride. A MOS transistor is made by the process of the present invention by applying the high-density mask material over the gate of the transistor, and forming buried oxide layers by ion implantation beneath only the source region and drain region of the transistor. The completed MOS transistor has the characteristics of reduced drain and source capacitance, reduced leakage, and faster response, but does not suffer from the floating-body effect of MOS transistors made by SOI processes.

摘要翻译： 一种用于在半导体衬底的选定部分中制造掩埋氧化物层的方法，包括以下步骤：将由高密度材料制成的图案化掩模施加在半导体衬底上，并通过氧离子注入选择性地形成掩埋氧化物层。 掩模的高密度材料优选为钨，但也可以由其它合适的材料如氮化硅制成。 通过在晶体管的栅极上施加高密度掩模材料，并且通过仅在晶体管的源极区域和漏极区域下的离子注入形成掩埋氧化物层，通过本发明的方法制造MOS晶体管。 完成的MOS晶体管具有降低的漏极和源极电容，减少的泄漏和更快的响应特性，但不受SOI工艺制造的MOS晶体管的浮体效应。