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公开(公告)号：US08623714B2
公开(公告)日：2014-01-07
申请号：US12728488
申请日：2010-03-22
申请人： Jae-Eun Park , Weipeng Li , Deleep R. Nair , M. Dean Sciacca , Voon-Yew Thean , Ava Wan , Dong-Hun Lee , Yong-Meng Lee
发明人： Jae-Eun Park , Weipeng Li , Deleep R. Nair , M. Dean Sciacca , Voon-Yew Thean , Ava Wan , Dong-Hun Lee , Yong-Meng Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/7833 , H01L21/28518 , H01L21/76895 , H01L29/665 , H01L29/6659
摘要： The present disclosure provides a method of forming an electrical device. The method may begin with forming a gate structure on a substrate, in which a spacer is present in direct contact with a sidewall of the gate structure. A source region and a drain region is formed in the substrate. A metal semiconductor alloy is formed on the gate structure, an outer sidewall of the spacer and one of the source region and the drain region. An interlevel dielectric layer is formed over the metal semiconductor alloy. A via is formed through the interlevel dielectric stopping on the metal semiconductor alloy. An interconnect is formed to the metal semiconductor alloy in the via. The present disclosure also includes the structure produced by the method described above.
摘要翻译： 本公开提供了形成电气装置的方法。 该方法可以从衬底上形成栅极结构开始，其中间隔物直接与栅极结构的侧壁接触。 源极区和漏极区形成在衬底中。 在栅极结构上形成金属半导体合金，间隔物的外侧壁和源极区域和漏极区域中的一个。 在金属半导体合金上形成层间电介质层。 通过金属半导体合金上的层间电介质停止形成通孔。 在通孔中的金属半导体合金形成互连。 本公开还包括通过上述方法制造的结构。
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公开(公告)号：US20110227136A1
公开(公告)日：2011-09-22
申请号：US12728488
申请日：2010-03-22
申请人： Jae-Eun Park , Weipeng Li , Deleep R. Nair , M. Dean Sciacca , Voon-Yew Thean , Ava Wan , Dong-Hun Lee , Yong-Meng Lee
发明人： Jae-Eun Park , Weipeng Li , Deleep R. Nair , M. Dean Sciacca , Voon-Yew Thean , Ava Wan , Dong-Hun Lee , Yong-Meng Lee
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7833 , H01L21/28518 , H01L21/76895 , H01L29/665 , H01L29/6659
摘要： The present disclosure provides a method of forming an electrical device. The method may begin with forming a gate structure on a substrate, in which a spacer is present in direct contact with a sidewall of the gate structure. A source region and a drain region is formed in the substrate. A metal semiconductor alloy is formed on the gate structure, an outer sidewall of the spacer and one of the source region and the drain region. An interlevel dielectric layer is formed over the metal semiconductor alloy. A via is formed through the interlevel dielectric stopping on the metal semiconductor alloy. An interconnect is formed to the metal semiconductor alloy in the via. The present disclosure also includes the structure produced by the method described above.
摘要翻译： 本公开提供了形成电气装置的方法。 该方法可以从衬底上形成栅极结构开始，其中间隔物直接与栅极结构的侧壁接触。 源极区和漏极区形成在衬底中。 在栅极结构上形成金属半导体合金，间隔物的外侧壁和源极区域和漏极区域中的一个。 在金属半导体合金上形成层间电介质层。 通过金属半导体合金上的层间电介质停止形成通孔。 在通孔中的金属半导体合金形成互连。 本公开还包括通过上述方法制造的结构。
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公开(公告)号：US07015140B2
公开(公告)日：2006-03-21
申请号：US10710131
申请日：2004-06-21
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/823835
摘要： Methods for selective salicidation of a semiconductor device. The invention implements a chemical surface pretreatment by immersion in ozonated water H2O prior to metal deposition. The pretreatment forms an interfacial layer that prevents salicidation over an n-type structure. As a result, the invention does not add any additional process steps to the conventional salicidation processing.
摘要翻译： 半导体器件选择性腐蚀的方法。 本发明在金属沉积之前通过浸没在臭氧水H 2 O 2中实现化学表面预处理。 预处理形成了防止n型结构上的水解的界面层。 结果，本发明不对常规的盐化处理添加任何额外的方法步骤。
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公开(公告)号：US20140019646A1
公开(公告)日：2014-01-16
申请号：US13547369
申请日：2012-07-12
IPC分类号： G06F3/00
CPC分类号： G06F1/185
摘要： A computer system having a host adapter is provided. The host adapter includes a primary port that follows a primary communication protocol. The primary port is connectable to at least one peripheral device. The host adapter includes a service port that follows a service communication protocol to monitor and send recovery commands to the peripheral device. The service port is decoupled and separate from the primary port and connectable to the at least one peripheral device.
摘要翻译： 提供具有主机适配器的计算机系统。 主机适配器包括遵循主要通信协议的主端口。 主端口可连接至少一个外围设备。 主机适配器包括遵循服务通信协议的服务端口，以监视和发送恢复命令到外围设备。 服务端口被解耦并与主端口分离并且可连接到至少一个外围设备。
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公开(公告)号：US09003068B2
公开(公告)日：2015-04-07
申请号：US13547369
申请日：2012-07-12
CPC分类号： G06F1/185
摘要： A computer system having a host adapter is provided. The host adapter includes a primary port that follows a primary communication protocol. The primary port is connectable to at least one peripheral device. The host adapter includes a service port that follows a service communication protocol to monitor and send recovery commands to the peripheral device. The service port is decoupled and separate from the primary port and connectable to the at least one peripheral device.
摘要翻译： 提供具有主机适配器的计算机系统。 主机适配器包括遵循主要通信协议的主端口。 主端口可连接至少一个外围设备。 主机适配器包括遵循服务通信协议的服务端口，以监视和发送恢复命令到外围设备。 服务端口被解耦并与主端口分离并且可连接到至少一个外围设备。
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