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    Method for growing carbon nanowalls
    1.
    发明申请
    Method for growing carbon nanowalls 失效
    生长碳纳米管的方法

    公开(公告)号：US20090274610A1

    公开(公告)日：2009-11-05

    申请号：US12501433

    申请日：2009-07-12

    申请人： MAHMOOD GHOANNEVISS ,  PARVIN ALIZADEH ESLAMI ,  SAEED NASIRI LAHEGHI

    发明人： MAHMOOD GHOANNEVISS ,  PARVIN ALIZADEH ESLAMI ,  SAEED NASIRI LAHEGHI

    IPC分类号： D01F9/12 ,  B01J8/02

    CPC分类号： B82Y30/00 ,  B01J19/088 ,  B01J2219/083 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0875 ,  B01J2219/0892 ,  B01J2219/0894 ,  B82Y40/00 ,  C01B32/18

    摘要： A method for growing carbon nanowalls on a base material is disclosed. The method comprises mixing a predetermined amount of a hydrocarbon gas with a predetermined amount of at least one non hydrocarbon gas; placing said base material in a reaction chamber having a first portion and a second portion, first portion is extended from a first end of reaction chamber to first end of base material; creating a radical in reaction chamber which comprises a hydrocarbon radical and a non hydrocarbon radical; applying the radical to the base material; and growing carbon nanowalls on said base material based on said hydrocarbon radical.

    摘要翻译： 公开了一种在基材上生长碳纳米壁的方法。 该方法包括将预定量的烃气与预定量的至少一种非烃气混合; 将所述基材放置在具有第一部分和第二部分的反应室中，第一部分从反应室的第一端延伸到基材的第一端; 在包含烃基和非烃基的反应室中产生自由基; 将基团施加到基材上; 以及基于所述烃基在所述基材上生长碳纳米壁。