摘要:
Provided are a method, system, and article of manufacture for configuring host settings to specify encryption and a key label referencing a key encrypting key to use to encrypt an encryption key provided to a storage drive to use to encrypt data from the host. User settings are received to configure a data class having data attributes with encryption settings. The data class is stored with the received user encryption settings. A job is received indicating a data set to store to a removable storage medium. A data class is determined having data class attributes matching data attributes of the data set indicated in the job. A determination is made from the determined data class whether to encrypt the data. The data set and a command to encrypt the data set are transmitted to a storage drive in response to determining that the determined data class indicates to encrypt the data, wherein the command to encrypt the data set causes the storage drive to encrypt the data sets written to the removable storage medium with an encryption key.
摘要:
An architecture and process for forming CMOS vertical replacement gate metal oxide semiconductor field-effect transistors is disclosed. The integrated circuit structure includes a semiconductor area with a major surface formed along a plane and first and second source/drain dopes regions formed in the surface. An insulating trench is formed between the first and second source/drain regions. A third doped region forming a channel of a different conductivity type than the first source/drain region is positioned over the first source/drain region. A fourth doped region is formed over the second source/drain region, having an opposite conductivity type with respect to the second source/drain region, and forming a channel region. Fifth and sixth source/drain regions are formed respectively over the third and fourth doped regions. In an associated method of manufacturing the semiconductor device, first and second source/drain regions are formed in the semiconductor layer, followed by the formation of third and fourth doped regions forming the channel. Fifth and sixth doped regions are then formed over the channels to complete the structure. An insulating region is formed between the first and the second source/drain regions to isolate these regions of opposite conductivity type.
摘要:
A computerized locking system for storage of bicycles and accessories includes: plurality of receiving bays to releasably secure the bicycles; a plurality of equipment storage units; a support surface for the receiving bays and the equipment storage units; and a computerized access box. The access box controls the locking and releasing of the bicycle and the storage unit.
摘要:
Provided are a method, system, and article of manufacture for configuring host settings to specify encryption and a key label referencing a key encrypting key to use to encrypt an encryption key provided to a storage drive to use to encrypt data from the host. User settings are received to configure a data class having data attributes with encryption settings. The data class is stored with the received user encryption settings. A job is received indicating a data set to store to a removable storage medium. A data class is determined having data class attributes matching data attributes of the data set indicated in the job. A determination is made from the determined data class whether to encrypt the data. The data set and a command to encrypt the data set are transmitted to a storage drive in response to determining that the determined data class indicates to encrypt the data, wherein the command to encrypt the data set causes the storage drive to encrypt the data sets written to the removable storage medium with an encryption key.
摘要:
A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.
摘要:
A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. The trenches are formed using a stop layer so that the depth of the trenches may be precisely controlled. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.