Semiconductor memory device and semiconductor device
    1.
    发明授权
    Semiconductor memory device and semiconductor device 失效
    半导体存储器件和半导体器件

    公开(公告)号:US07426152B2

    公开(公告)日:2008-09-16

    申请号:US11826751

    申请日:2007-07-18

    IPC分类号: G11C5/14

    摘要: A technology capable of improving the yield by the trimming of internal properties of a semiconductor device is provided. A semiconductor device is provided with an internal voltage step-down circuit and an internal voltage step-up circuit whose property values (internal voltage and others) are variable, a fuse circuit unit, a JTAG function unit 304 which inputs and retains signals from outside, a control circuit which perform logical operation based on an output signal of the fuse circuit unit and an output signal of the JTAG function unit, and the property values of the internal voltage step-down circuit and the internal voltage step-up circuit are controlled based on a result of the logical operation by the control circuit.

    摘要翻译: 提供了能够通过修整半导体器件的内部特性来提高产量的技术。 半导体器件具有内部降压电路和其特性值(内部电压等)可变的内部升压电路,熔丝电路单元,输入并保持来自外部的信号的JTAG功能单元304 控制电路,其基于熔丝电路单元的输出信号和JTAG功能单元的输出信号进行逻辑运算,并且控制内部降压电路和内部升压电路的特性值 基于控制电路的逻辑运算的结果。

    Semiconductor memory device and semiconductor device
    3.
    发明申请
    Semiconductor memory device and semiconductor device 有权
    半导体存储器件和半导体器件

    公开(公告)号:US20060221727A1

    公开(公告)日:2006-10-05

    申请号:US11391226

    申请日:2006-03-29

    IPC分类号: G11C7/00

    摘要: A technology capable of improving the yield by the trimming of internal properties of a semiconductor device is provided. A semiconductor device is provided with an internal voltage step-down circuit and an internal voltage step-up circuit whose property values (internal voltage and others) are variable, a fuse circuit unit, a JTAG function unit 304 which inputs and retains signals from outside, a control circuit which perform logical operation based on an output signal of the fuse circuit unit and an output signal of the JTAG function unit, and the property values of the internal voltage step-down circuit and the internal voltage step-up circuit are controlled based on a result of the logical operation by the control circuit.

    摘要翻译: 提供了能够通过修整半导体器件的内部特性来提高产量的技术。 半导体器件具有内部降压电路和其特性值(内部电压等)可变的内部升压电路,熔丝电路单元,输入并保持来自外部的信号的JTAG功能单元304 控制电路,其基于熔丝电路单元的输出信号和JTAG功能单元的输出信号进行逻辑运算,并且控制内部降压电路和内部升压电路的特性值 基于控制电路的逻辑运算的结果。

    Semiconductor memory device and semiconductor device
    4.
    发明申请
    Semiconductor memory device and semiconductor device 失效
    半导体存储器件和半导体器件

    公开(公告)号:US20070274139A1

    公开(公告)日:2007-11-29

    申请号:US11826751

    申请日:2007-07-18

    IPC分类号: G11C5/14

    摘要: A technology capable of improving the yield by the trimming of internal properties of a semiconductor device is provided. A semiconductor device is provided with an internal voltage step-down circuit and an internal voltage step-up circuit whose property values (internal voltage and others) are variable, a fuse circuit unit, a JTAG function unit 304 which inputs and retains signals from outside, a control circuit which perform logical operation based on an output signal of the fuse circuit unit and an output signal of the JTAG function unit, and the property values of the internal voltage step-down circuit and the internal voltage step-up circuit are controlled based on a result of the logical operation by the control circuit.

    摘要翻译: 提供了能够通过修整半导体器件的内部特性来提高产量的技术。 半导体器件具有内部降压电路和其特性值(内部电压等)可变的内部升压电路,熔丝电路单元,输入并保持来自外部的信号的JTAG功能单元304 控制电路,其基于熔丝电路单元的输出信号和JTAG功能单元的输出信号进行逻辑运算,并且控制内部降压电路和内部升压电路的特性值 基于控制电路的逻辑运算的结果。