公开(公告)号：US20050271818A1

公开(公告)日：2005-12-08

申请号：US10529362

申请日：2003-09-26

申请人： Toshiaki Kakemura ,  Hiroto Kashima ,  Manabu Tsujino

发明人： Toshiaki Kakemura ,  Hiroto Kashima ,  Manabu Tsujino

IPC分类号： C23C16/04 ,  C23C16/52 ,  C23C16/32 ,  C23C16/00

CPC分类号： C23C16/52 ,  C23C16/045

摘要： In a thin film forming method in which a mixture gas which includes a monomer gas and an oxidizing reactive gas is plasmatized and a thin film which is formed of an oxide is formed on a surface of a substrate, the mixture gas is plasmatized while a flow amount ratio of the monomer gas with respect to the reactive gas is varied under the condition that the flow amount ratio is included within at least a specific range. In this case, a thin film forming device 10 in which high frequency electricity is supplied from a high frequency power supply section 30 to a plurality of thin film forming chambers is used. By doing this, it is possible to provide a thin film forming method and a thin film forming device in which it is possible to strictly form a thin film which has characteristics such as a gas barrier property without variation in quality and to provide flexibility to the thin film even if the thin film is formed onto a large number of substrates. Also, in a monitoring method for measuring the intensity of the hydrogen alpha rays and the intensity of the oxygen radiation rays which are radiated from the plasma while forming the thin film and comparing each intensity with a standard intensity of each radiation under the condition that the thin film has a desirable surface quality, and for determining whether or not a thin film which has a desirable surface quality is formed, a thin film forming device is provided with: an optical spectrometer 12 which measures the intensity of each radiation, a storage section which stores a standard intensity of each radiation, and a determining section which determines whether or not each measured intensity is in a specific range by comparing each measured intensity with the standard intensity of each radiation. By doing this, it is possible to determine whether or not the produced thin film has a desirable surface quality during the process.

公开(公告)号：US08062716B2

公开(公告)日：2011-11-22

申请号：US10529362

申请日：2003-09-26

申请人： Toshiaki Kakemura ,  Hiroto Kashima ,  Manabu Tsujino

发明人： Toshiaki Kakemura ,  Hiroto Kashima ,  Manabu Tsujino

IPC分类号： H05H1/24

CPC分类号： C23C16/52 ,  C23C16/045

摘要： A thin film forming method for plasmatizing a mixture gas, the mixture gas being made up of a monomer gas and an oxidizing reactive gas, and for forming a thin film on a surface of a substrate, the thin film being made of an oxide. The method includes forming a first thin film by plasmatizing the mixture gas while varying a supply flow amount ratio of the monomer gas with respect to the reactive gas and forming a final thin film by increasing the supply flow amount ratio of the monomer gas with respect to the reactive gas after the forming of the first film.

摘要翻译： 一种薄膜形成方法，用于对混合气体进行等离子化，该混合气体由单体气体和氧化反应气体组成，并且在基板的表面上形成薄膜，该薄膜由氧化物制成。 该方法包括通过使混合气体等离子化而形成第一薄膜，同时改变单体气体相对于反应气体的供应流量比，并通过增加单体气体的供应流量比相对于反应气体形成最终薄膜 在形成第一膜之后的反应气体。