Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process

    公开(公告)号:US20050271818A1

    公开(公告)日:2005-12-08

    申请号:US10529362

    申请日:2003-09-26

    CPC分类号: C23C16/52 C23C16/045

    摘要: In a thin film forming method in which a mixture gas which includes a monomer gas and an oxidizing reactive gas is plasmatized and a thin film which is formed of an oxide is formed on a surface of a substrate, the mixture gas is plasmatized while a flow amount ratio of the monomer gas with respect to the reactive gas is varied under the condition that the flow amount ratio is included within at least a specific range. In this case, a thin film forming device 10 in which high frequency electricity is supplied from a high frequency power supply section 30 to a plurality of thin film forming chambers is used. By doing this, it is possible to provide a thin film forming method and a thin film forming device in which it is possible to strictly form a thin film which has characteristics such as a gas barrier property without variation in quality and to provide flexibility to the thin film even if the thin film is formed onto a large number of substrates. Also, in a monitoring method for measuring the intensity of the hydrogen alpha rays and the intensity of the oxygen radiation rays which are radiated from the plasma while forming the thin film and comparing each intensity with a standard intensity of each radiation under the condition that the thin film has a desirable surface quality, and for determining whether or not a thin film which has a desirable surface quality is formed, a thin film forming device is provided with: an optical spectrometer 12 which measures the intensity of each radiation, a storage section which stores a standard intensity of each radiation, and a determining section which determines whether or not each measured intensity is in a specific range by comparing each measured intensity with the standard intensity of each radiation. By doing this, it is possible to determine whether or not the produced thin film has a desirable surface quality during the process.

    Mold for plastic bottles
    2.
    发明授权
    Mold for plastic bottles 失效
    塑料瓶模具

    公开(公告)号:US5217729A

    公开(公告)日:1993-06-08

    申请号:US672669

    申请日:1991-03-21

    IPC分类号: B29C33/10 B29C49/04 B29C49/62

    摘要: A mold for plastic bottles is designed to have an internal arithmetic average of roughness height of a cavity-forming wall to be less than 0.25 .mu.m. The mold has air passages for decompressing air in the cavity and absorbing the air between the wall and a parison expanded by blowing into it. The mold has air suction passages around the mouth portion of the mold and between the main body and the bottom portion of the mold. The surface of the bottle and the molds have so little air stagnated between the mold and the bottle wall that the resulting bottle results in a high gloss.

    摘要翻译: 用于塑料瓶的模具被设计成具有凹陷形成壁的粗糙度的内部算术平均值小于0.25μm。 该模具具有用于对空腔中的空气进行减压的空气通道,并吸收壁和通过吹入其中膨胀的型坯之间的空气。 模具具有在模具口部周围以及主体与模具底部之间的吸气通道。 瓶子和模具的表面在模具和瓶壁之间几乎没有空气滞留,所得瓶子产生高光泽。

    Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process
    3.
    发明授权
    Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process 有权
    薄膜形成方法,薄膜形成装置及薄膜形成工序的监控方法

    公开(公告)号:US08062716B2

    公开(公告)日:2011-11-22

    申请号:US10529362

    申请日:2003-09-26

    IPC分类号: H05H1/24

    CPC分类号: C23C16/52 C23C16/045

    摘要: A thin film forming method for plasmatizing a mixture gas, the mixture gas being made up of a monomer gas and an oxidizing reactive gas, and for forming a thin film on a surface of a substrate, the thin film being made of an oxide. The method includes forming a first thin film by plasmatizing the mixture gas while varying a supply flow amount ratio of the monomer gas with respect to the reactive gas and forming a final thin film by increasing the supply flow amount ratio of the monomer gas with respect to the reactive gas after the forming of the first film.

    摘要翻译: 一种薄膜形成方法,用于对混合气体进行等离子化,该混合气体由单体气体和氧化反应气体组成,并且在基板的表面上形成薄膜,该薄膜由氧化物制成。 该方法包括通过使混合气体等离子化而形成第一薄膜,同时改变单体气体相对于反应气体的供应流量比,并通过增加单体气体的供应流量比相对于反应气体形成最终薄膜 在形成第一膜之后的反应气体。