公开(公告)号：US08067801B2

公开(公告)日：2011-11-29

申请号：US12181692

申请日：2008-07-29

申请人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

发明人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

IPC分类号： H01L29/735

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823468 ,  H01L27/088 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device is provided, which comprises a first transistor and a second transistor formed in a semiconductor layer. The first transistor includes a first source region and a first drain region sandwiching a first gate electrode with the first source region. The second transistor includes an LDD region and a drift region sandwiching the second gate electrode with the LDD region, and a second drain region adjacent to the drift region to sandwich the second gate electrode with the second source region. The first gate electrode has a first sidewall formed on sides thereof and the second gate electrode has a second sidewall formed on sides thereof. The width of the former along the first insulator differs from the width of the latter along the second insulator.

摘要翻译： 提供了一种半导体器件，其包括形成在半导体层中的第一晶体管和第二晶体管。 第一晶体管包括第一源极区域和与第一源极区域夹持第一栅电极的第一漏极区域。 第二晶体管包括LDD区和漂移区，其夹持具有LDD区的第二栅极，以及与漂移区相邻的第二漏极区，以将第二栅电极夹在第二源极区。 第一栅电极具有形成在其侧面上的第一侧壁，并且第二栅电极具有形成在其侧面上的第二侧壁。 沿着第一绝缘体的前者的宽度与第二绝缘体的宽度不同。

公开(公告)号：US20090032869A1

公开(公告)日：2009-02-05

申请号：US12181692

申请日：2008-07-29

申请人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

发明人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823468 ,  H01L27/088 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device is provided, which comprises a first transistor and a second transistor formed in a semiconductor layer. The first transistor includes a first source region and a first drain region sandwiching a first gate electrode with the first source region. The second transistor includes an LDD region and a drift region sandwiching the second gate electrode with the LDD region, and a second drain region adjacent to the drift region to sandwich the second gate electrode with the second source region. The first gate electrode has a first sidewall formed on sides thereof and the second gate electrode has a second sidewall formed on sides thereof. The width of the former along the first insulator differs from the width of the latter along the second insulator.

摘要翻译： 提供了一种半导体器件，其包括形成在半导体层中的第一晶体管和第二晶体管。 第一晶体管包括第一源极区域和与第一源极区域夹持第一栅电极的第一漏极区域。 第二晶体管包括LDD区和漂移区，其夹持具有LDD区的第二栅极，以及与漂移区相邻的第二漏极区，以将第二栅电极夹在第二源极区。 第一栅电极具有形成在其侧面上的第一侧壁，并且第二栅电极具有形成在其侧面上的第二侧壁。 沿着第一绝缘体的前者的宽度与第二绝缘体的宽度不同。

公开(公告)号：US20110233668A1

公开(公告)日：2011-09-29

申请号：US13053063

申请日：2011-03-21

申请人： Manji OBATAKE ,  Tomoko Matsudai

发明人： Manji OBATAKE ,  Tomoko Matsudai

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835

摘要： According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region. As viewed in a direction perpendicular to the surface of the base region, the source region and at least a part of the drain region extend generally parallel in a line shape, and a length of a portion of the drift region sandwiched between the insulating layer and the base region is shorter in the generally parallel extending direction than in a direction generally perpendicular to the generally parallel extending direction.

摘要翻译： 根据一个实施例，半导体器件包括第二导电类型的基极区域，第一导电类型的漂移区域，绝缘层，第一导电类型的漏极区域，栅极氧化物膜，栅电极， 第一主电极和第二主电极。 基极区域包括第一导电类型的源极区域。 漂移区域与基底区域相邻。 绝缘层从漂移区域的表面到内部提供。 漏极区域设置在漂移区域的表面中，并且跨越基极区域和绝缘层与源极区域相对。 栅极氧化膜设置在基极区域的表面上。 栅电极设置在栅氧化膜上。 第一主电极连接到源区。 第二主电极连接到漏区。 从与基底区域的表面垂直的方向观察，源极区域和漏极区域的至少一部分大致平行地呈直线状延伸，漂移区域的一部分的长度夹在绝缘层和 基本区域在大致平行的延伸方向上比在大致垂直于大致平行的延伸方向的方向上更短。

公开(公告)号：US08507985B2

公开(公告)日：2013-08-13

申请号：US13052027

申请日：2011-03-18

申请人： Hirofumi Hirasozu ,  Kimihiko Deguchi ,  Manji Obatake ,  Tomoko Matsudai

发明人： Hirofumi Hirasozu ,  Kimihiko Deguchi ,  Manji Obatake ,  Tomoko Matsudai

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0873 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

摘要： According to one embodiment, a semiconductor device, includes a semiconductor layer, a first base region of a first conductivity type, a first source region of a second conductivity type, a second base region of the first conductivity type, a back gate region of the first conductivity type, a drift region of the second conductivity type, a drain region of the second conductivity type, a first insulating region, a second insulating region, a gate oxide film, a first gate electrode, a second gate electrode, a first main electrode and a second main electrode. These constituent elements are provided on the surface of the semiconductor layer. The distance between the first base region and the first insulating region is not more than 1.8 μm. The distance between the first base region and the first insulating region is shorter than a distance between the second base region and the second insulating region.

摘要翻译： 根据一个实施例，半导体器件包括半导体层，第一导电类型的第一基极区域，第二导电类型的第一源极区域，第一导电类型的第二基极区域，第一导电类型的第二基极区域， 第一导电类型，第二导电类型的漂移区，第二导电类型的漏极区，第一绝缘区，第二绝缘区，栅极氧化膜，第一栅电极，第二栅电极，第一主电极 电极和第二主电极。 这些构成元件设置在半导体层的表面上。 第一基极区域和第一绝缘区域之间的距离不大于1.8μm。 第一基极区域和第一绝缘区域之间的距离比第二基极区域和第二绝缘区域之间的距离短。

公开(公告)号：US08159036B2

公开(公告)日：2012-04-17

申请号：US12141386

申请日：2008-06-18

申请人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

发明人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

IPC分类号： H01L21/02

CPC分类号： H01L29/0847 ,  H01L21/2652 ,  H01L21/2658 ,  H01L29/42376 ,  H01L29/66659 ,  H01L29/7835

摘要： A LDD layer of the second conduction type locates in the surface of a semiconductor layer beneath a sidewall insulator film. A source layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the LDD layer. A resurf layer of the second conduction type is formed in the surface of the semiconductor layer at a position sandwiching the gate electrode with the LDD layer. A drain layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the resurf layer. The resurf layer is formed in depth to have peaks of a first and a second impurity concentration in turn from the surface of the semiconductor layer. The peak of the first impurity concentration is smaller than the peak of the second impurity concentration.

摘要翻译： 第二导电类型的LDD层位于侧壁绝缘膜下面的半导体层的表面。 第二导电类型的源极层在与LDD层相邻的位置处形成在半导体层的表面中。 在半导体层的表面上，在与LDD层夹着栅电极的位置处形成第二导电类型的复层。 第二导电类型的漏极层在与复层层相邻的位置处形成在半导体层的表面中。 再次形成深度为半导体层表面的第一和第二杂质浓度的峰值。 第一杂质浓度的峰值小于第二杂质浓度的峰值。

公开(公告)号：US20110303979A1

公开(公告)日：2011-12-15

申请号：US13052027

申请日：2011-03-18

申请人： Hirofumi HIRASOZU ,  Kimihiko Deguchi ,  Manji Obatake ,  Tomoko Matsudai

发明人： Hirofumi HIRASOZU ,  Kimihiko Deguchi ,  Manji Obatake ,  Tomoko Matsudai

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0873 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

摘要： According to one embodiment, a semiconductor device, includes a semiconductor layer, a first base region of a first conductivity type, a first source region of a second conductivity type, a second base region of the first conductivity type, a back gate region of the first conductivity type, a drift region of the second conductivity type, a drain region of the second conductivity type, a first insulating region, a second insulating region, a gate oxide film, a first gate electrode, a second gate electrode, a first main electrode and a second main electrode. These constituent elements are provided on the surface of the semiconductor layer. The distance between the first base region and the first insulating region is not more than 1.8 μm. The distance between the first base region and the first insulating region is shorter than a distance between the second base region and the second insulating region.

摘要翻译： 根据一个实施例，半导体器件包括半导体层，第一导电类型的第一基极区域，第二导电类型的第一源极区域，第一导电类型的第二基极区域，第一导电类型的第二基极区域， 第一导电类型，第二导电类型的漂移区，第二导电类型的漏极区，第一绝缘区，第二绝缘区，栅极氧化膜，第一栅电极，第二栅电极，第一主电极 电极和第二主电极。 这些构成元件设置在半导体层的表面上。 第一基极区域和第一绝缘区域之间的距离不大于1.8μm。 第一基极区域和第一绝缘区域之间的距离比第二基极区域和第二绝缘区域之间的距离短。

公开(公告)号：US08637928B2

公开(公告)日：2014-01-28

申请号：US13053063

申请日：2011-03-21

申请人： Manji Obatake ,  Tomoko Matsudai

发明人： Manji Obatake ,  Tomoko Matsudai

IPC分类号： H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/7835

摘要： According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region. As viewed in a direction perpendicular to the surface of the base region, the source region and at least a part of the drain region extend generally parallel in a line shape, and a length of a portion of the drift region sandwiched between the insulating layer and the base region is shorter in the generally parallel extending direction than in a direction generally perpendicular to the generally parallel extending direction.

摘要翻译： 根据一个实施例，半导体器件包括第二导电类型的基极区域，第一导电类型的漂移区域，绝缘层，第一导电类型的漏极区域，栅极氧化物膜，栅电极， 第一主电极和第二主电极。 基极区域包括第一导电类型的源极区域。 漂移区域与基底区域相邻。 绝缘层从漂移区域的表面到内部提供。 漏极区域设置在漂移区域的表面中，并且跨越基极区域和绝缘层与源极区域相对。 栅极氧化膜设置在基极区域的表面上。 栅电极设置在栅氧化膜上。 第一主电极连接到源区。 第二主电极连接到漏区。 从与基底区域的表面垂直的方向观察，源极区域和漏极区域的至少一部分大致平行地呈直线状延伸，漂移区域的一部分的长度夹在绝缘层和 基本区域在大致平行的延伸方向上比在大致垂直于大致平行的延伸方向的方向上更短。

公开(公告)号：US20080315305A1

公开(公告)日：2008-12-25

申请号：US12141386

申请日：2008-06-18

申请人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

发明人： Tomoko Matsudai ,  Norio Yasuhara ,  Manji Obatake

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/2652 ,  H01L21/2658 ,  H01L29/42376 ,  H01L29/66659 ,  H01L29/7835

摘要： A LDD layer of the second conduction type locates in the surface of a semiconductor layer beneath a sidewall insulator film. A source layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the LDD layer. A resurf layer of the second conduction type is formed in the surface of the semiconductor layer at a position sandwiching the gate electrode with the LDD layer. A drain layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the resurf layer. The resurf layer is formed in depth to have peaks of a first and a second impurity concentration in turn from the surface of the semiconductor layer. The peak of the first impurity concentration is smaller than the peak of the second impurity concentration.

摘要翻译： 第二导电类型的LDD层位于侧壁绝缘膜下面的半导体层的表面。 第二导电类型的源极层在与LDD层相邻的位置处形成在半导体层的表面中。 在半导体层的表面上，在与LDD层夹着栅电极的位置处形成第二导电类型的复层。 第二导电类型的漏极层在与复层层相邻的位置处形成在半导体层的表面中。 再次形成深度为半导体层表面的第一和第二杂质浓度的峰值。 第一杂质浓度的峰值小于第二杂质浓度的峰值。