Lithography system and projection method
    1.
    发明申请
    Lithography system and projection method 失效
    光刻系统和投影方法

    公开(公告)号:US20070064213A1

    公开(公告)日:2007-03-22

    申请号:US11521671

    申请日:2006-09-15

    IPC分类号: G03B27/54

    摘要: The inventions relates to a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using a holed mirror for on axis incidence of said light beams on said light sensitive part, the hole or, alternatively, holes of said mirror being provided for passage of said exposure projections.

    摘要翻译: 本发明涉及一种光刻系统,其中电子图像图案被传送到用于将图像投影到目标表面的曝光工具,所述曝光工具包括用于控制曝光投影的控制单元,所述控制单元至少部分地包括在 所述曝光工具的投影空间,并且通过光信号提供控制数据,所述光信号通过使用自由空间光学互连而耦合到所述控制单元,所述自由空间光学互连包括发射到光敏部分的光敏部分的调制光束 所述控制单元,其中所述调制光束使用用于所述光束在所述光敏部分上的轴入射的孔眼耦合到所述光敏部分,所述孔或者所述反射镜的孔可选地用于通过 曝光预测

    Lithography system, sensor and measuring method
    2.
    发明申请
    Lithography system, sensor and measuring method 有权
    光刻系统,传感器和测量方法

    公开(公告)号:US20070057204A1

    公开(公告)日:2007-03-15

    申请号:US11521705

    申请日:2006-09-14

    IPC分类号: G21K5/10

    摘要: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

    摘要翻译: 用于测量带电粒子束系统的大量带电粒子束的特性的光刻系统,传感器和方法,特别是直接写入光刻系统,其中通过使用转换器元件将带电粒子束转换成光束,使用 与所述转换器元件成一直线的一系列光敏检测器,例如二极管,CCD或CMOS器件,用于检测所述光束,用所述光束曝光之后,从所述检测器电子地读出所得到的信号,利用所述信号确定 一个或多个光束特性的值,从而使用自动电子计算器,以及电子地调整带电粒子系统,以便校正超出所有或多个所述带电粒子束的规格范围值,每一个用于一个或多个属性, 基于所述计算的属性值。