摘要:
A patterned magnetic recording media and method thereof is provided. A recording layer comprises a continuous surface of more-noble elements and less-noble elements, such as CoXYZ, wherein X can be Pt, Pd, Ru, Rh, Ir, Os, or Au, wherein Y can be null or Cr, and wherein Z can be null, Cu, Ta, Ti, O, B, Ag, or TiO2. The recording layer is masked, shielding areas for recording domains and exposing areas between the recording domains. A voltage bias establishes the substrate as an anode in the presence of Pt cathode, in an electrolyte bath. Ions of the less-noble element are anodically removed predominantly from the exposed areas of the recording layer for a controlled time. The controlled time minimizes oxidation of the nobler element and reduces undercutting of the recording domains. The article produced can have separating areas with surfaces substantially formed of the more-noble element.
摘要:
A patterned magnetic recording media and method thereof is provided. A recording layer comprises a continuous surface of more-noble elements and less-noble elements, such as CoXYZ, wherein X can be Pt, Pd, Ru, Rh, Ir, Os, or Au, wherein Y can be null or Cr, and wherein Z can be null, Cu, Ta, Ti, O, B, Ag, or TiO2. The recording layer is masked, shielding areas for recording domains and exposing areas between the recording domains. A voltage bias establishes the substrate as an anode in the presence of Pt cathode, in an electrolyte bath. Ions of the less-noble element are anodically removed predominantly from the exposed areas of the recording layer for a controlled time. The controlled time minimizes oxidation of the nobler element and reduces undercutting of the recording domains. The article produced can have separating areas with surfaces substantially formed of the more-noble element.
摘要:
Aspects include methods to produce pattern media templates and the templates. A pattern of resist structures is formed on a first material layer. A conformal layer of a second material is deposited on the resist pattern, covering tops and side walls of the resist structures. The first material is more resistant to ion milling than the second material, and less resistant to plasma etching than the second material. The first material can be amorphous carbon and the second material can be aluminum oxide. The second material is removed on the tops, and preserved on the side walls. The resist structures and portions of the first layer not supporting second layer material are removed by plasma. The remaining structure is 2× denser than the resist pattern. Conformal deposition of second material and ion milling can be repeated. CMP removes the second material down to a portion of remaining first material, and remaining first material is removed by plasma, leaving a 4× denser pitch pattern structure formed from the second material.