公开(公告)号：US07110172B2

公开(公告)日：2006-09-19

申请号：US10880100

申请日：2004-06-30

申请人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto

发明人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto

IPC分类号： G02B21/00

CPC分类号： G02B21/0016 ,  G02B21/33 ,  Y10S359/90

摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.

摘要翻译： 对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式中进行观察，该两种控制模式包括SIL 3位于待机位置的第一模式，并且基于第一模式的基板的折射率no和厚度对其执行聚焦和像差校正 半导体器件S和第二模式，其中SIL 3位于插入位置，并且基于衬底的折射率no和厚度t 0 0进行聚焦和像差校正， 和折射率n 1 1，厚度d 1，以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。

公开(公告)号：US20050190436A1

公开(公告)日：2005-09-01

申请号：US10880100

申请日：2004-06-30

申请人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto

发明人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto

IPC分类号： G02B21/00 ,  G02B21/33

CPC分类号： G02B21/0016 ,  G02B21/33 ,  Y10S359/90

摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.

摘要翻译： 对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式中进行观察，该两种控制模式包括SIL 3位于待机位置的第一模式，并且基于第一模式的基板的折射率no和厚度对其执行聚焦和像差校正 半导体器件S和第二模式，其中SIL 3位于插入位置，并且基于衬底的折射率no和厚度t 0 0进行聚焦和像差校正， 和折射率n 1 1，厚度d 1，以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。

公开(公告)号：US07576910B2

公开(公告)日：2009-08-18

申请号：US11979592

申请日：2007-11-06

申请人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

发明人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

IPC分类号： G02B21/00

CPC分类号： G02B21/33 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95684 ,  G02B21/0016 ,  G02B21/362

摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.

摘要翻译： 对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察，该两种控制模式由SIL 3位于待机位置的第一模式进行，并且基于第一模式的基板的折射率n0和厚度t0进行聚焦和像差校正 半导体器件S和第二模式，其中SIL 3位于插入位置，并且基于衬底的折射率n0和厚度t0执行聚焦和像差校正，并且折射率n1，厚度 d1和SIL3的曲率半径R1。这提供了能够容易地观察对半导体器件的微结构等的分析所需的样品的显微镜和样品观察方法。

公开(公告)号：US20080074739A1

公开(公告)日：2008-03-27

申请号：US11979592

申请日：2007-11-06

申请人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

发明人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

IPC分类号： G02B21/00

CPC分类号： G02B21/33 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95684 ,  G02B21/0016 ,  G02B21/362

摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.

摘要翻译： 对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察，该两种控制模式由SIL 3位于待机位置的第一模式组成，并且基于折射率n <0>进行聚焦和像差校正， 半导体器件S的衬底的厚度t 0 <0 _{和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0，折射率n <1，厚度d 1， 以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。}

公开(公告)号：US07312921B2

公开(公告)日：2007-12-25

申请号：US11333550

申请日：2006-01-18

申请人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

发明人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

IPC分类号： G02B21/00

CPC分类号： G02B21/33 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95684 ,  G02B21/0016 ,  G02B21/362

摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.

摘要翻译： 对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察，该两种控制模式由SIL 3位于待机位置的第一模式组成，并且基于折射率n <0>进行聚焦和像差校正， 半导体器件S的衬底的厚度t 0 <0 _{和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0，折射率n <1，厚度d 1， 以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。}

公开(公告)号：US20060176548A1

公开(公告)日：2006-08-10

申请号：US11333550

申请日：2006-01-18

申请人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

发明人： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto ,  Yoshio Isobe

IPC分类号： G02B21/00

CPC分类号： G02B21/33 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95684 ,  G02B21/0016 ,  G02B21/362

摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.

摘要翻译： 对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式下进行观察，该两种控制模式由SIL 3位于待机位置的第一模式组成，并且基于折射率n <0>进行聚焦和像差校正， 半导体器件S的衬底的厚度t 0 <0 _{和其中SIL 3位于插入位置并且基于折射率执行聚焦和像差校正的第二模式 n 和底层的厚度t 0 <0，折射率n <1，厚度d 1， 以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。}