公开(公告)号：US07301202B2

公开(公告)日：2007-11-27

申请号：US11151410

申请日：2005-06-14

申请人： Shigeo Kouzuki ,  Hideki Okumura ,  Wataru Saito ,  Masaru Izumisawa ,  Masahiko Shiomi ,  Hitoshi Kobayashi ,  Kenichi Tokano ,  Satoshi Yanagisawa ,  Hironori Yoshioka ,  Manabu Kimura

发明人： Shigeo Kouzuki ,  Hideki Okumura ,  Wataru Saito ,  Masaru Izumisawa ,  Masahiko Shiomi ,  Hitoshi Kobayashi ,  Kenichi Tokano ,  Satoshi Yanagisawa ,  Hironori Yoshioka ,  Manabu Kimura

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/66712 ,  H01L29/7811

摘要： A semiconductor substrate of a first conduction type is provided for serving as a common drain to a plurality of power MISFET cells. A middle semiconductor layer is formed on the semiconductor substrate and has a lower impurity concentration than that of the semiconductor substrate. Pillar regions are formed on the middle semiconductor layer and include semiconductor regions of the first conduction type having a lower impurity concentration than that of the middle semiconductor layer.

摘要翻译： 提供第一导电类型的半导体衬底作为用于多个功率MISFET单元的公共漏极。 在半导体衬底上形成中间半导体层，其杂质浓度低于半导体衬底的杂质浓度。 柱状区域形成在中间半导体层上，并且包括具有比中间半导体层的杂质浓度低的第一导电类型的半导体区域。

公开(公告)号：US20060138536A1

公开(公告)日：2006-06-29

申请号：US11151410

申请日：2005-06-14

申请人： Shigeo Kouzuki ,  Hideki Okumura ,  Wataru Saito ,  Masaru Izumisawa ,  Masahiko Shiomi ,  Hitoshi Kobayashi ,  Kenichi Tokano ,  Satoshi Yanagisawa ,  Hironori Yoshioka ,  Manabu Kimura

发明人： Shigeo Kouzuki ,  Hideki Okumura ,  Wataru Saito ,  Masaru Izumisawa ,  Masahiko Shiomi ,  Hitoshi Kobayashi ,  Kenichi Tokano ,  Satoshi Yanagisawa ,  Hironori Yoshioka ,  Manabu Kimura

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/66712 ,  H01L29/7811

摘要： A semiconductor substrate of a first conduction type is provided for serving as a common drain to a plurality of power MISFET cells. A middle semiconductor layer is formed on the semiconductor substrate and has a lower impurity concentration than that of the semiconductor substrate. Pillar regions are formed on the middle semiconductor layer and include semiconductor regions of the first conduction type having a lower impurity concentration than that of the middle semiconductor layer.

摘要翻译： 提供第一导电类型的半导体衬底作为用于多个功率MISFET单元的公共漏极。 在半导体衬底上形成中间半导体层，其杂质浓度低于半导体衬底的杂质浓度。 柱状区域形成在中间半导体层上，并且包括具有比中间半导体层的杂质浓度低的第一导电类型的半导体区域。