公开(公告)号：US5761957A

公开(公告)日：1998-06-09

申请号：US796117

申请日：1997-02-06

申请人： Nobukazu Oba ,  Yasutoshi Suzuki ,  Inao Toyoda ,  Masaki Onoue

发明人： Nobukazu Oba ,  Yasutoshi Suzuki ,  Inao Toyoda ,  Masaki Onoue

IPC分类号： B81C1/00 ,  G01L9/00 ,  G01L19/04 ,  G01L9/06 ,  H01C17/28

CPC分类号： B81C1/00404 ,  G01L19/04 ,  G01L9/0042 ,  Y10T29/49103

摘要： A semiconductor pressure sensor includes a diaphragm of an octagonal shape formed on a (110) silicon substrate by anisotropic etching. When a distance between two sides of the diaphragm, which are defined by intersecting lines of a (110) face and a (111) face of the silicon substrate, is represented as L1 and a length of a side of the diaphragm, which is defined by an intersecting line of the (110) face and a (100) face, is represented as L2, the diaphragm is formed so as to satisfy the following relationship: 0.65

摘要翻译： 半导体压力传感器包括通过各向异性蚀刻形成在（110）硅衬底上的八边形形状的膜片。 当由膜的（110）面和（111）面的交叉线限定的隔膜的两侧之间的距离被表示为L1和限定的隔膜的一侧的长度 通过（110）面和（100）面的交线表示为L2，膜片形成为满足以下关系：0.65