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99 条记录 (耗时 0.028 秒)

    Semiconductor type physical quantity sensor
    3.
    发明授权
    Semiconductor type physical quantity sensor 失效
    半导体型物理量传感器

    公开(公告)号：US5986316A

    公开(公告)日：1999-11-16

    申请号：US979705

    申请日：1997-11-26

    申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Nobukazu Oba ,  Hiroaki Tanaka

    发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Nobukazu Oba ,  Hiroaki Tanaka

    IPC分类号： G01L9/00 ,  H01L29/06 ,  G01L9/06 ,  H01L41/00

    CPC分类号： G01L19/141 ,  G01L19/0084 ,  G01L19/146 ,  G01L19/147

    摘要： A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.

    摘要翻译： 在硅衬底的具有平面取向为（110）的表面中形成扩散计。 扩散计量器被设置为使得其主电流沿着与硅衬底的表面中由于基底的变形而在一个方向上产生大的应力的方向垂直的<110>方向流动。 因此，即使在硅衬底的表面产生大的偏压应力的情况下，由于扩散计的主电流流动的<110>方向与偏压应力的方向垂直，所以有一点变化 在扩散计的电阻值中。 结果，可以减少由基座的失真引起的检测误差。

    Sensor chip having a diode portions and a thin-wall portion
    4.
    发明授权
    Sensor chip having a diode portions and a thin-wall portion 失效
    传感器芯片具有二极管部分和薄壁部分

    公开(公告)号：US5932921A

    公开(公告)日：1999-08-03

    申请号：US958319

    申请日：1997-10-27

    申请人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

    发明人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

    IPC分类号： G01L9/00 ,  H01L21/3063 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01L9/0042 ,  H01L29/84

    摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

    摘要翻译： 当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。 该蚀刻通过电化学停止蚀刻进行。 在该过程中，向隔膜部分施加电压。 二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。 二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。 集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。 此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。

    Membrane type gas sensor and method for manufacturing membrane type gas sensor
    6.
    发明授权
    Membrane type gas sensor and method for manufacturing membrane type gas sensor 有权
    膜式气体传感器及膜式气体传感器的制造方法

    公开(公告)号：US07157054B2

    公开(公告)日：2007-01-02

    申请号：US10211259

    申请日：2002-08-05

    申请人： Inao Toyoda ,  Yasutoshi Suzuki

    发明人： Inao Toyoda ,  Yasutoshi Suzuki

    IPC分类号： B32B5/02 ,  G01P21/00 ,  G21C17/00

    CPC分类号： G01N27/128

    摘要： A gas sensor includes a semiconductor substrate and a sensing membrane. The sensing membrane is located at the bottom of a recess, which is formed by etching the substrate, and includes a heater, heater extension electrodes, a gas sensitive film, and gas-sensitive-film extension electrodes. A first end of each heater extension electrode is in contact with the heater, and a second end of each heater extension electrode extends outward from the sensing membrane. A first end of each gas-sensitive-film extension electrode is in contact with the gas sensitive film, and a second end of each gas-sensitive-film extension electrode extends outward from the sensing membrane. All of the heater, the heater extension electrodes, and the gas-sensitive-film extension electrodes are made of polycrystalline silicon.

    摘要翻译： 气体传感器包括半导体衬底和感测膜。 检测膜位于通过蚀刻基板形成的凹部的底部，并且包括加热器，加热器延伸电极，气敏膜和气敏膜延伸电极。 每个加热器延伸电极的第一端与加热器接触，并且每个加热器延伸电极的第二端从感测膜向外延伸。 每个气敏膜延伸电极的第一端与气体敏感膜接触，并且每个气敏膜延伸电极的第二端从感测膜向外延伸。 所有加热器，加热器延伸电极和气敏膜延伸电极均由多晶硅制成。

    PRESSURE SENSOR HAVING DIAPHRAGM
    9.
    发明申请
    PRESSURE SENSOR HAVING DIAPHRAGM 有权
    带压力传感器的压力传感器

    公开(公告)号：US20050166682A1

    公开(公告)日：2005-08-04

    申请号：US11019286

    申请日：2004-12-23

    申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

    发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

    IPC分类号： G01L1/16 ,  G01L1/18 ,  G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L9/08 ,  G01L19/04 ,  G01L23/18 ,  G01L23/22

    CPC分类号： G01L1/18 ,  G01L9/0042 ,  G01L9/0058 ,  G01L23/18 ,  G01L23/22

    摘要： A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

    摘要翻译： 压力传感器包括：壳体; 具有量规电阻器的传感器芯片; 设在量规电阻上的一个老板; 能够根据压力变形的金属隔膜; 以及设置在所述金属膜和所述凸台之间的载荷传递部件。 壳体容纳传感器芯片，凸台和负载传递构件。 外壳被金属隔膜覆盖。 检测施加到隔膜的压力，使得通过金属隔膜，负载传递构件和凸台将对应于压力的负载施加到量规电阻器，使得基于量规的电阻变化来测量压力 电阻。 量规电阻大于凸台。

    Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate
    10.
    发明授权
    Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate 失效
    具有应变计的半导体压力传感器和半导体衬底上的电路部分

    公开(公告)号：US06653702B2

    公开(公告)日：2003-11-25

    申请号：US09866752

    申请日：2001-05-30

    申请人： Seiichiro Ishio ,  Inao Toyoda ,  Kazuaki Hamamoto ,  Yasutoshi Suzuki

    发明人： Seiichiro Ishio ,  Inao Toyoda ,  Kazuaki Hamamoto ,  Yasutoshi Suzuki

    IPC分类号： H01L2982

    CPC分类号： H01L27/1203 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2203/0778 ,  G01L9/0054 ,  G01L9/06 ,  H01L21/84

    摘要： A semiconductor pressure sensor includes a SOI substrate composed of first and second silicon substrates. A diaphragm portion is formed by the first silicon substrate as a bottom of a recess portion formed in the second silicon substrate. Strain gauges are formed on the diaphragm portion, and a circuit portion is formed on the first silicon substrate at a region other than the diaphragm portion. A LOCOS film for isolating the strain gauges from the circuit portion is formed on the first silicon substrate outside the outermost peripheral portion of the diaphragm portion.

    摘要翻译： 半导体压力传感器包括由第一和第二硅衬底构成的SOI衬底。 隔膜部分由第一硅衬底形成为形成在第二硅衬底中的凹部的底部。 应变计形成在隔膜部分上，并且电路部分在隔膜部分以外的区域形成在第一硅衬底上。 在隔膜部分的最外周部分的外侧的第一硅基板上形成用于将应变计与电路部分隔离的LOCOS膜。