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公开(公告)号：US07781313B2
公开(公告)日：2010-08-24
申请号：US12584269
申请日：2009-09-01
CPC分类号： H01L21/304 , H01L21/02024 , H01L21/2007 , H01L21/76256
摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.
摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。
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公开(公告)号：US20080132032A1
公开(公告)日：2008-06-05
申请号：US11946643
申请日：2007-11-28
IPC分类号： H01L21/30
CPC分类号： H01L21/304 , H01L21/02024 , H01L21/2007 , H01L21/76256
摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.
摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。
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公开(公告)号：US20090325385A1
公开(公告)日：2009-12-31
申请号：US12584269
申请日：2009-09-01
IPC分类号： H01L21/304
CPC分类号： H01L21/304 , H01L21/02024 , H01L21/2007 , H01L21/76256
摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.
摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得了具有高平坦度的SOI晶片或外延硅晶片。
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公开(公告)号：US07902039B2
公开(公告)日：2011-03-08
申请号：US11946643
申请日：2007-11-28
IPC分类号： H01L21/00
CPC分类号： H01L21/304 , H01L21/02024 , H01L21/2007 , H01L21/76256
摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.
摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。
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