公开(公告)号：US4405435A

公开(公告)日：1983-09-20

申请号：US296314

申请日：1981-08-26

申请人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

发明人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

IPC分类号： B01J3/00 ,  C23C14/56 ,  C23C15/00

CPC分类号： B01J3/006 ,  C23C14/566 ,  Y10S414/137 ,  Y10S414/139

摘要： An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.

摘要翻译： 一种用于在真空中进行连续处理的装置，包括入口室，第一中间室，至少一个真空处理室，第二中间室和排出室，其按照依次传送基板的方向以指示的顺序排列。 安装在入口室入口的壁上，在相邻的室之间和在抽出室的出口侧的壁上的壁上安装有一个通常关闭和打开底板的打开装置。 用于通过打开装置沿水平方向输送每个基板的输送装置安装在每个室中，并且排气装置也安装在每个室中。 在第一和第二中间室中安装有用于将多个基板存储在盒中的基板存储装置。 至少一个真空处理装置安装在真空处理室中。

公开(公告)号：US4379743A

公开(公告)日：1983-04-12

申请号：US287925

申请日：1981-07-29

申请人： Masashi Nakatsukasa ,  Nobuyuki Takahashi

发明人： Masashi Nakatsukasa ,  Nobuyuki Takahashi

IPC分类号： C23C14/56 ,  H01L21/02 ,  H01L21/203 ,  H01L21/31 ,  C23C15/00

CPC分类号： C23C14/566

摘要： In a sputtering apparatus comprising a main chamber for carrying out sputtering and a preliminary chamber for preliminarily processing a substrate prior to sputtering, a gate valve interposed between the chambers is opened with the pressure in the preliminary chamber is reduced lower than that in the main chamber after completion of the preliminary processing. The pressure reduction is carried out by reducing supply of a gas into the preliminary chamber by the use of a pressure control system coupled to the preliminary chamber. Preferably, the supply of the gas is bypassed through a valve to an exhausting system for the preliminary chamber. Alternatively, the pressure in the main chamber is made higher than that in the preliminary chamber after completion of the preliminary processing by squeezing an evacuation system for the main chamber to reduce the rate of evacuation. Supply of the gas into the preliminary chamber and evacuation of the main chamber may be simultaneously reduced.

摘要翻译： 在包括用于进行溅射的主室和用于在溅射之前预先处理衬底的预备室的溅射装置中，插入在室之间的闸阀被打开，预备室中的压力比主室中的压力降低 完成初步处理后。 通过使用耦合到预备室的压力控制系统减少气体进入预备室来进行减压。 优选地，气体的供应通过阀旁路到用于预备室的排气系统。 或者，通过挤压主室的抽空系统，在完成初步处理之后，使主室中的压力高于预备室中的压力，以降低排气速率。 可以同时减少将气体供应到预备室中并且主室的抽空。