公开(公告)号：US4405435A

公开(公告)日：1983-09-20

申请号：US296314

申请日：1981-08-26

申请人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

发明人： Hideki Tateishi ,  Tsuneaki Kamei ,  Katsuo Abe ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Masashi Nakatsukasa ,  Nobuyuki Takahashi ,  Ryuji Sugimoto

IPC分类号： B01J3/00 ,  C23C14/56 ,  C23C15/00

CPC分类号： B01J3/006 ,  C23C14/566 ,  Y10S414/137 ,  Y10S414/139

摘要： An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.

摘要翻译： 一种用于在真空中进行连续处理的装置，包括入口室，第一中间室，至少一个真空处理室，第二中间室和排出室，其按照依次传送基板的方向以指示的顺序排列。 安装在入口室入口的壁上，在相邻的室之间和在抽出室的出口侧的壁上的壁上安装有一个通常关闭和打开底板的打开装置。 用于通过打开装置沿水平方向输送每个基板的输送装置安装在每个室中，并且排气装置也安装在每个室中。 在第一和第二中间室中安装有用于将多个基板存储在盒中的基板存储装置。 至少一个真空处理装置安装在真空处理室中。

公开(公告)号：US4401539A

公开(公告)日：1983-08-30

申请号：US343858

申请日：1982-01-29

申请人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

发明人： Katsuo Abe ,  Shigeru Kobayashi ,  Tsuneaki Kamei ,  Hideki Tateishi ,  Susumu Aiuchi

IPC分类号： H01J37/34 ,  C23C15/00

CPC分类号： H01J37/3426 ,  H01J37/3408 ,  H01J37/3458 ,  H01J37/347

摘要： A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate. In view of the facts that lines of magnetic flux generated by a single magnetic flux source does not link each other and the Maxwell stress, the target structure includes the planar target plate and a magnetic flux source having at least three pole pieces in an arrangement that the planar target plate is disposed between the anode and the magnetic flux source, and the amount of magnetic flux starting from a portion of the pole pieces is controlled to control the amount of magnetic flux (or the flux density) existing at the remaining pole pieces and the magnetic flux distribution above the planar target plate, thereby controlling the position of a region where the plasma is formed.

摘要翻译： 公开了一种平面磁控管型的溅射装置，其中通过辉光放电使低压气体离子化，等离子体中的离子被施加在阴极和阳极之间的电压加速，以轰击靶结构，原子或颗粒 通过离子轰击从平面靶板溅射的靶材料沉积在设置在阳极侧的基板上，因此在基板上形成由与靶材料相同的材料制成的薄膜。 鉴于由单个磁通源产生的磁通线不彼此连接和麦克斯韦应力的事实，目标结构包括平面靶板和具有至少三个极片的磁通源，其结构设置为 平面靶板设置在阳极和磁通源之间，并且从极片的一部分开始的磁通量被控制以控制存在于剩余极片的磁通量（或磁通密度） 以及平面靶板上方的磁通分布，从而控制形成等离子体的区域的位置。

公开(公告)号：US4610770A

公开(公告)日：1986-09-09

申请号：US686005

申请日：1984-12-24

申请人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

发明人： Hiroshi Saito ,  Hideki Tateishi ,  Shigeru Kobayashi ,  Susumu Aiuchi ,  Yasumichi Suzuki ,  Masao Sakata ,  Hideaki Shimamura ,  Tsuneaki Kamei

IPC分类号： C23C14/36 ,  C23C14/34 ,  C23C14/35 ,  C23C14/46 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C14/34 ,  C23C14/46 ,  H01J37/3266 ,  H01J37/34

摘要： A pair of magnets for producing a mirror magnetic field are disposed outside of an electrode structure carrying a target. Microwaves from a microwave source are introduced toward and into a space defined by the mirror magnetic field for generating high-density plasma. While maintaining this high-density plasma over a wide area of the surface of the target, an electric field substantially perpendicular to the surface of the target is applied for sputtering of the target material. The optimized conditions for plasma generation can be selected when the high-density plasma formed outside of a processing chamber is guided to migrate toward an area above the target in the processing chamber. Capability of sputtering of the material from the entire surface of the target increases the rate of film deposition on a substrate and improves the target utilization rate (the quantity of the material deposited on the substrate/the usable area of the target).

摘要翻译： 用于产生镜面磁场的一对磁体设置在承载目标的电极结构的外侧。 来自微波源的微波被引入并由用于产生高密度等离子体的反射镜磁场限定的空间中。 当在靶的表面的较宽区域上保持这种高密度等离子体时，施加基本上垂直于靶的表面的电场，以溅射目标材料。 当在处理室外部形成的高密度等离子体被引导以朝向处理室内的目标区域迁移时，可以选择等离子体产生的优化条件。 从靶的整个表面溅射材料的能力增加了基板上的膜沉积速率，并提高了目标利用率（沉积在基板上的材料的量/目标的可用面积）。

公开(公告)号：US4675096A

公开(公告)日：1987-06-23

申请号：US645671

申请日：1984-08-30

申请人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

发明人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

IPC分类号： B65G49/07 ,  C23C14/34 ,  C23C14/56 ,  H01L21/203 ,  C23C14/36

CPC分类号： C23C14/566 ,  C23C14/568

摘要： A continuous sputtering apparatus comprising a main vacuum chamber, one loading station and a plurality of process stations capable of having their pressures controlled separately. The process station includes a sub vacuum chamber capable of being in communication with the main vacuum chamber through an opening and an evacuation port. The loading station and the process stations are arranged to be spaced with equal angles. Substrate holders are provided to face the stations and are rotated by said equal angle in a time. The substrate holder opens and closes the opening of the sub vacuum chamber to serve as a gate valve.

摘要翻译： 一种连续溅射装置，包括主真空室，一个装载站和能够分别控制其压力的多个处理站。 处理站包括能够通过开口和排气口与主真空室连通的副真空室。 装载站和处理站被布置为以相等角度间隔开。 基板保持器被设置成面对车站，并且在一段时间内以相等的角度旋转。 基板保持器打开和关闭副真空室的开口以用作闸阀。

公开(公告)号：US08205625B2

公开(公告)日：2012-06-26

申请号：US11987078

申请日：2007-11-27

申请人： Hideki Tateishi ,  Tsutomu Nakada ,  Akira Susaki ,  Shohei Shima ,  Yukio Fukunaga

发明人： Hideki Tateishi ,  Tsutomu Nakada ,  Akira Susaki ,  Shohei Shima ,  Yukio Fukunaga

IPC分类号： B08B5/00 ,  B08B13/00

CPC分类号： B24B37/04 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/76814 ,  H01L21/76883

摘要： A surface treatment apparatus of a substrate can clean a substrate surface in the air without employing a vacuum apparatus, and can remove a natural oxide film or an organic material, such as BTA, from the substrate surface without resorting to plasma cleaning. The surface treatment apparatus includes: an inert gas supply section for supplying an inert gas to the whole or part of a substrate surface to form an oxygen-blocking zone; a heating section for keeping the substrate surface at a predetermined temperature; and a cleaning gas supply section for supplying a cleaning gas to the oxygen-blocking zone to clean the substrate surface.

摘要翻译： 基板的表面处理装置可以在不使用真空装置的情况下清洁空气中的基板表面，并且可以从基板表面去除自然氧化膜或有机材料（例如BTA）而不用等离子体清洗。 表面处理装置包括：惰性气体供给部，用于向基板表面的全部或一部分供给惰性气体，形成阻氧区; 用于将基板表面保持在预定温度的加热部分; 以及清洁气体供给部，用于向氧阻挡区域供给清洁气体以清洁基板表面。

公开(公告)号：US20110155581A1

公开(公告)日：2011-06-30

申请号：US12977592

申请日：2010-12-23

申请人： Akira SUSAKI ,  Tsutomu Nakada ,  Hideki Tateishi

发明人： Akira SUSAKI ,  Tsutomu Nakada ,  Hideki Tateishi

IPC分类号： C25D5/10 ,  C25D3/02 ,  C25D3/38 ,  C25D3/12 ,  C25D5/34 ,  C25D5/12

CPC分类号： C25D3/38 ,  C25D3/12 ,  C25D5/38 ,  C25D5/42 ,  C25D5/44

摘要： A metal film-forming method is capable of forming a metal film on a surface of a base metal film, formed on a surface of a substrate, with sufficient adhesion to the base metal film even when a natural oxide film is formed on the surface of the base metal film. The metal film-forming method includes: preparing a substrate having a base metal film formed on a surface; and carrying out electroplating of the substrate using the base metal film as a cathode and another metal as an anode while immersing the substrate in a solution containing a metal complex and a reducing material, both dissolved in a solvent, to form a metal film, deriving from a metal contained in the metal complex, on the surface of the base metal film.

摘要翻译： 金属膜形成方法能够在形成在基板表面上的基底金属膜的表面上形成金属膜，即使当在基体金属膜的表面上形成自然氧化膜时，也能够对基底金属膜具有足够的粘合力 贱金属膜。 金属膜形成方法包括：制备在表面上形成有贱金属膜的基板; 并且使用基底金属膜作为阴极和另一种金属作为阳极进行基板的电镀，同时将基板浸入含有溶解在溶剂中的金属络合物和还原材料的溶液中以形成金属膜，得到 从包含在金属络合物中的金属在基底金属膜的表面上。

公开(公告)号：US07709394B2

公开(公告)日：2010-05-04

申请号：US11687738

申请日：2007-03-19

申请人： Hidenori Miyoshi ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

发明人： Hidenori Miyoshi ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.

摘要翻译： 一种用于处理具有绝缘膜和金属层的基板的方法，包括以下步骤：向基材供应羧酸酐，并在将羧酸酐供应到基材的步骤期间加热基材。

公开(公告)号：US20100097607A1

公开(公告)日：2010-04-22

申请号：US11989763

申请日：2006-08-01

申请人： Akira Susaki ,  Shohei Shima ,  Yukio Fukunaga ,  Hideki Tateishi ,  Junko Mine

发明人： Akira Susaki ,  Shohei Shima ,  Yukio Fukunaga ,  Hideki Tateishi ,  Junko Mine

IPC分类号： G01B11/06 ,  C23C14/52 ,  B05C11/00 ,  B01J19/00 ,  G01J4/00 ,  C23G1/02

CPC分类号： G01B11/0641

摘要： A film thickness measuring method can carry out measurement of a thickness of an oxide film more simply in a shorter time. The film thickness measuring method includes determining a thickness of an oxide film or thin film of a metal or alloy by solely using a phase difference Δ, measured by ellipsometry, based on a predetermined relationship between the phase difference Δ and the thickness of the oxide film or thin film of the metal or alloy.

摘要翻译： 膜厚测量方法可以在更短的时间内更简单地进行氧化膜厚度的测量。 薄膜厚度测量方法包括基于相位差＆Dgr之间的预定关系，通过使用通过椭偏仪测量的相位差＆Dgr i来确定金属或合金的氧化物膜或薄膜的厚度; 以及金属或合金的氧化膜或薄膜的厚度。

公开(公告)号：US20070224725A1

公开(公告)日：2007-09-27

申请号：US11687738

申请日：2007-03-19

申请人： Hidenori MIYOSHI ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

发明人： Hidenori MIYOSHI ,  Kenji Ishikawa ,  Yukio Takigawa ,  Yoshihiro Nakata ,  Hideki Tateishi

IPC分类号： H01L51/40 ,  H01L21/00

CPC分类号： H01L21/02063 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

摘要： A method for processing a substrate having an insulation film and a metal layer thereon comprises the steps of supplying a carboxylic acid anhydride to the substrate, and heating the substrate during the step of supplying the carboxylic acid anhydride to the substrate.

摘要翻译： 一种用于处理具有绝缘膜和金属层的基板的方法，包括以下步骤：向基材供应羧酸酐，并在将羧酸酐供应到基材的步骤期间加热基材。

公开(公告)号：US20090204252A1

公开(公告)日：2009-08-13

申请号：US12391852

申请日：2009-02-24

申请人： Hidenori MIYOSHI ,  Kenji Ishikawa ,  Hideki Tateishi ,  Masakazu Hayashi ,  Nobuyuki Nishikawa

发明人： Hidenori MIYOSHI ,  Kenji Ishikawa ,  Hideki Tateishi ,  Masakazu Hayashi ,  Nobuyuki Nishikawa

IPC分类号： C23G1/02 ,  H01L21/34 ,  C09K3/00 ,  B01J19/00 ,  C23G1/00 ,  B08B5/00 ,  G06F17/00

CPC分类号： H01L21/02063 ,  H01L21/67207 ,  H01L21/76814 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target substrate while setting the target substrate to be kept at a first temperature, and a second step of sublimating the metal complex by heating the target substrate to maintain it at a second temperature higher than the first temperature.

摘要翻译： 基板处理方法包括：第一步骤，通过在将目标基板保持在第一温度的同时，使含有有机化合物的处理气体被形成在目标基板上的金属层吸附而形成金属络合物， 通过加热目标基板使其维持在比第一温度高的第二温度升华金属络合物的步骤。