公开(公告)号：US06787415B1

公开(公告)日：2004-09-07

申请号：US10402698

申请日：2003-03-28

申请人： Mei-Hua Chung ,  Ching-Hwa Chen ,  Vei-Han Chan

发明人： Mei-Hua Chung ,  Ching-Hwa Chen ,  Vei-Han Chan

IPC分类号： H01L21336

CPC分类号： H01L27/11526 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11531

摘要： Nonvolatile memory wordlines (160) are formed as sidewall spacers on sidewalls of row structures (280). Each row structure may contain floating and control gates (120, 140), or some other elements. Pedestals (340) are formed adjacent to the row structures before the conductive layer (160) for the wordlines is deposited. The pedestals are formed in the area of the contact openings (330.1) that will be etched in an overlying dielectric (310) to form contacts to the wordlines. The pedestals raise the top surface of the wordline layer near the contact openings, so the contact opening etch can be made shorter. The pedestals also increase the minimum thickness of the wordline layer near the contact openings, so the loss of the wordline layer during the etch of the contact openings becomes less critical, and the photolithographic tolerances required for patterning the contact openings can be relaxed. The pedestals can be dummy structures (they may have no electrical functionality).

摘要翻译： 非易失性存储字字（160）形成为在行结构（280）的侧壁上的侧壁间隔物。 每个行结构可以包含浮动和控制门（120,140）或一些其它元件。 在放置用于字线的导电层（160）之前，与行结构相邻地形成基座（340）。 基座形成在接触开口（330.1）的将在上覆电介质（310）中被蚀刻以形成与字线的接触的区域中。 基座使接触开口附近的字线层的上表面升高，因此可以使接触开口蚀刻更短。 基座也增加了接触开口附近的字线层的最小厚度，因此在接触开口的蚀刻期间字线层的损失变得不那么关键，并且可以放宽图形化接触开口所需的光刻公差。 基座可以是虚拟结构（它们可能没有电气功能）。