公开(公告)号：US20050189315A1

公开(公告)日：2005-09-01

申请号：US10978633

申请日：2004-11-01

申请人： D. Knight ,  Michael Cleroux ,  Richard Finlay

发明人： D. Knight ,  Michael Cleroux ,  Richard Finlay

IPC分类号： C23F1/00 ,  H01L21/00 ,  H01L21/306 ,  H01S3/08 ,  H01S5/12 ,  H01S5/20 ,  H01S5/323

CPC分类号： H01S5/12 ,  H01L21/30612 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2081 ,  H01S5/3235 ,  H01S2301/173 ,  H01S2304/04

摘要： The present invention is a combination of in-situ etching using a grating mask that is formed in semiconductor material only and the subsequent overgrowth of additional semiconductor material to enclose the grating structure prior to exposure to the atmosphere and the contaminants therein. The present invention is based on a two-stage process. First the grating pattern is defined in a semiconductor material, which is the grating mask. This grating mask is created at a position above the material that is to ultimately contain the grating pattern. Upon the completion of the fabrication of the grating mask, the semiconductor structure is moved to a reactor, where in the second stage, the grating pattern defined by the grating mask is transferred into the underlying semiconductor layers by in-situ etching. The grating is subsequently overgrown with additional semiconductor material while in the same reactor, thereby not exposing the etched grating pattern to the atmosphere thereby reducing the contaminants in the grating structure of the semiconductor laser.

摘要翻译： 本发明是使用仅在半导体材料中形成的光栅掩模的原位蚀刻和随后的附加半导体材料的过度生长以在暴露于大气和其中的污染物之前封装光栅结构的组合。 本发明基于两阶段方法。 首先，光栅图案被定义在半导体材料中，其是光栅掩模。 该光栅掩模在最终包含光栅图案的材料上方的位置处产生。 在完成光栅掩模的制造之后，将半导体结构移动到电抗器，其中在第二阶段，由光栅掩模限定的光栅图案通过原位蚀刻转移到下面的半导体层中。 光栅随后在相同的反应器中长满了附加的半导体材料，从而不会将蚀刻的光栅图案暴露于大气中，从而减少半导体激光器的光栅结构中的污染物。