公开(公告)号：US20050189315A1

公开(公告)日：2005-09-01

申请号：US10978633

申请日：2004-11-01

申请人： D. Knight ,  Michael Cleroux ,  Richard Finlay

发明人： D. Knight ,  Michael Cleroux ,  Richard Finlay

IPC分类号： C23F1/00 ,  H01L21/00 ,  H01L21/306 ,  H01S3/08 ,  H01S5/12 ,  H01S5/20 ,  H01S5/323

CPC分类号： H01S5/12 ,  H01L21/30612 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2081 ,  H01S5/3235 ,  H01S2301/173 ,  H01S2304/04

摘要： The present invention is a combination of in-situ etching using a grating mask that is formed in semiconductor material only and the subsequent overgrowth of additional semiconductor material to enclose the grating structure prior to exposure to the atmosphere and the contaminants therein. The present invention is based on a two-stage process. First the grating pattern is defined in a semiconductor material, which is the grating mask. This grating mask is created at a position above the material that is to ultimately contain the grating pattern. Upon the completion of the fabrication of the grating mask, the semiconductor structure is moved to a reactor, where in the second stage, the grating pattern defined by the grating mask is transferred into the underlying semiconductor layers by in-situ etching. The grating is subsequently overgrown with additional semiconductor material while in the same reactor, thereby not exposing the etched grating pattern to the atmosphere thereby reducing the contaminants in the grating structure of the semiconductor laser.

摘要翻译： 本发明是使用仅在半导体材料中形成的光栅掩模的原位蚀刻和随后的附加半导体材料的过度生长以在暴露于大气和其中的污染物之前封装光栅结构的组合。 本发明基于两阶段方法。 首先，光栅图案被定义在半导体材料中，其是光栅掩模。 该光栅掩模在最终包含光栅图案的材料上方的位置处产生。 在完成光栅掩模的制造之后，将半导体结构移动到电抗器，其中在第二阶段，由光栅掩模限定的光栅图案通过原位蚀刻转移到下面的半导体层中。 光栅随后在相同的反应器中长满了附加的半导体材料，从而不会将蚀刻的光栅图案暴露于大气中，从而减少半导体激光器的光栅结构中的污染物。

公开(公告)号：US20050208768A1

公开(公告)日：2005-09-22

申请号：US10978632

申请日：2004-11-01

申请人： Richard Finlay ,  D. Knight ,  Darren Goodchild ,  Karin Hinzer

发明人： Richard Finlay ,  D. Knight ,  Darren Goodchild ,  Karin Hinzer

IPC分类号： B44C1/22 ,  G02B5/18 ,  H01L21/302 ,  H01L21/308 ,  H01S5/12 ,  H01S5/20

CPC分类号： G02B5/1857 ,  H01L21/3083 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2081 ,  H01S2301/173

摘要： The present invention is a combination of in-situ etching with a grating mask pattern comprised only of semiconductor material, together with the fabrication of a protective layer beneath the semiconductor grating mask that protects the semiconductor material that readily oxidises. As such the present invention is based on a two-stage process. First the grating pattern is defined in a semiconductor material, wherein this pattern is called the semiconductor grating mask. The semiconductor grating mask sits on top of a layer of protective material, which in turn is on top of the semiconductor material that readily oxidises, wherein the protective layer prevents oxidation of the material below. The semiconductor structure is then moved to a reactor, where, in the second stage, the mask pattern is transferred into the underlying protective layer and the semiconductor material that readily oxidises, by in-situ etching. The grating is then overgrown in the same reactor without exposing the etched grating to the atmosphere. The overgrown material protects the underlying semiconductor material from oxidation when the structure is removed from the reactor.

摘要翻译： 本发明是原位蚀刻与仅由半导体材料组成的光栅掩模图案的组合，以及在半导体光栅掩模下面制造保护半导体材料的保护层，其保护易于氧化。 因此，本发明基于两阶段过程。 首先，光栅图案被限定在半导体材料中，其中该图案被称为半导体光栅掩模。 半导体光栅掩模位于保护材料层的顶部，保护材料层又在容易氧化的半导体材料的顶部上，其中保护层防止材料在下面被氧化。 然后将半导体结构移动到反应器中，其中在第二阶段中，通过原位蚀刻将掩模图案转移到下面的保护层和容易氧化的半导体材料。 然后光栅在相同的反应器中过度生长，而不会将蚀刻的光栅暴露在大气中。 当结构从反应器中移除时，杂色成长的材料保护下面的半导体材料免于氧化。

公开(公告)号：US20050141578A1

公开(公告)日：2005-06-30

申请号：US10871895

申请日：2004-06-18

申请人： Benoit Reid ,  Arnaud Fily ,  Norbert Lichtenstein ,  D. Knight

发明人： Benoit Reid ,  Arnaud Fily ,  Norbert Lichtenstein ,  D. Knight

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

CPC分类号： H01S5/2232 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/2237 ,  H01S5/32391

摘要： The present invention provides a self-aligned laser structure that can be fabricated on a p-substrate and provides a means for limiting the leakage current thereby improving the overall efficiency of the structure. The waveguide laser structure comprises a first series of layers deposited in sequence upon a p-InP, p-GaAs or p-GaN substrate or other form of p-substrate, wherein these layers form the p-clad layer. An active layer is subsequently deposited upon this first series of layers. A blocking layer of insulating or semi-insulating material is deposited upon the active layer, wherein this blocking layer has a trench formed therein, wherein this semi-insulating layer or layers are epitaxially deposited. The blocking layer provides a means for limiting current flow therethrough, thereby reducing leakage current. Upon the blocking layer are deposited a second series of layers completing the laser structure, wherein this second series of layers form the n-clad layer. Since the n-clad layer contains more than one material, the structure provides lateral waveguiding. Upon the completion of the deposition of all of the layers, a positive electrode is formed on the bottom surface of the first series of layers and a negative electrode is formed on the top of the second series of layers.

摘要翻译： 本发明提供了可以在p-基板上制造的自对准激光器结构，并提供用于限制漏电流的装置，从而提高结构的整体效率。 波导激光器结构包括依次沉积在p-InP，p-GaAs或p-GaN衬底或其他形式的p衬底上的第一系列层，其中这些层形成p覆层。 随后在该第一系列层上沉积有源层。 绝缘或半绝缘材料的阻挡层沉积在有源层上，其中该阻挡层具有形成在其中的沟槽，其中该半绝缘层被外延沉积。 阻挡层提供了限制电流从而减少泄漏电流的装置。 在阻挡层沉积完成激光结构的第二系列层，其中该第二系列层形成n覆层。 由于n覆层包含多于一种材料，所以该结构提供横向波导。 在完成所有层的沉积之后，在第一系列层的底表面上形成正电极，并且在第二系列层的顶部上形成负电极。