公开(公告)号：US6005225A

公开(公告)日：1999-12-21

申请号：US827542

申请日：1997-03-28

申请人： Jeffrey M. Kowalski ,  Christopher T. Ratliff ,  Terry A. Koble, Jr. ,  Jon H. Pack ,  Michael H. Yang

发明人： Jeffrey M. Kowalski ,  Christopher T. Ratliff ,  Terry A. Koble, Jr. ,  Jon H. Pack ,  Michael H. Yang

IPC分类号： B01J19/00 ,  H01L21/00 ,  H01L21/22 ,  H05B3/06 ,  C23C16/00 ,  F27D15/02 ,  H05B3/66

CPC分类号： H01L21/67098

摘要： A vertical rapid heating furnace for treating semiconductor wafers comprising a hot wall reaction tube positioned within a cylindrical array of circular parallel heating elements substantially concentric therewith, each heating element being spaced from the hot wall reaction tube, each heating element comprising a coil of resistance heating conductor. The coiled resistance heating conductor can be a coil of resistance heating wire, the coil having an outer diameter of from 1 to 7 mm and supported in an annular heating element support. Each heating element support is dimensioned to support and accommodate the thermally expanded heating element supported therein at both the minimum and maximum furnace temperatures. Preferably, each annular heating element support is provided by an annular recess in the insulation surrounding the array of heating elements. The preferred vertical rapid heating and cooling furnace for treating semiconductor wafers comprises a hot wall reaction tube and a cylindrical array of circular parallel heating elements substantially concentric therewith and spaced therefrom to define a cooling gas passageway between said hot wall reaction tube and said cylindrical array of heating elements. The cooling gas passageway has lower and upper ends, the furnace has a cooling gas inlet opening in communication with said lower end, and a cooling gas exhaust outlet in communication with said upper end.

摘要翻译： 一种用于处理半导体晶片的垂直快速加热炉，其包括位于与其基本上同心的圆形平行加热元件的圆柱形阵列内的热壁反应管，每个加热元件与热壁反应管间隔开，每个加热元件包括电阻加热线圈 导体。 线圈电阻加热导体可以是电阻加热线的线圈，线圈的外径为1至7mm，并且支撑在环形加热元件支架中。 每个加热元件支撑件的尺寸被设计成在最小和最大炉温度下支撑和容纳支撑在其中的热膨胀的加热元件。 优选地，每个环形加热元件支撑件由围绕加热元件阵列的绝缘体中的环形凹部提供。 用于处理半导体晶片的优选的垂直快速加热和冷却炉包括热壁反应管和与其基本同心的圆形平行加热元件的圆柱形阵列，并与之隔开，以在所述热壁反应管和所述圆柱形阵列之间限定冷却气体通道 加热元件。 冷却气体通路具有下端和上端，炉具有与所述下端连通的冷却气体入口，以及与所述上端连通的冷却气体排出口。