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公开(公告)号：US09317965B2
公开(公告)日：2016-04-19
申请号：US13071130
申请日：2011-03-24
CPC分类号： G06T17/00 , G06F17/30241 , G06F17/3028 , G06F2217/16 , G06T9/00 , G06T2210/56
摘要： A method, apparatus, system, article of manufacture, and computer readable medium provide the ability to create a point cloud indexed file. A grid (of cells that are divided into subcells) is mapped over points in a point cloud dataset. An occupancy value, that indicates whether a subcell contains a point, is computed for each subcell. A surface area contribution factor is computed for each cell and identifies a count of subcells that are occupied divided by a total number of subcells. The surface area contribution factor for each cell and points for each cell are written to the point cloud indexed file.
摘要翻译： 方法，装置，系统，制品和计算机可读介质提供创建点云索引文件的能力。 在点云数据集中的点上映射网格（被划分成子单元的单元格）。 为每个子单元计算占用值，表示子单元是否包含点。 为每个单元计算表面积贡献因子，并识别被占用的子单元的数量除以子单元的总数。 每个单元格的表面积贡献因子和每个单元格的点都写入点云索引文件。
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公开(公告)号：US06462310B1
公开(公告)日：2002-10-08
申请号：US09638113
申请日：2000-08-11
IPC分类号： F27B514
CPC分类号： C23C16/463 , C23C16/455 , C23C16/4584 , C30B25/10 , C30B25/14 , F27B5/14 , F27B2005/161 , F27D1/1858 , F27D2003/0075 , H01L21/67109
摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is. configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.
摘要翻译： 公开了一种用于晶片热处理的设备。 该装置包括具有热源的加热室。 冷却室位于加热室附近并且包括冷却源。 晶圆座是。 构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。 一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。
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公开(公告)号：US4412812A
公开(公告)日：1983-11-01
申请号：US335170
申请日：1981-12-28
IPC分类号： F27B17/00 , H01L21/677 , F27B9/00 , F27B3/22 , F27D5/00
CPC分类号： F27B17/0025 , H01L21/67781 , Y10S414/14
摘要： A furnace (100) is provided which aids in the reduction of polysilicon and quartz contaminants during polysilicon deposition on monocrystalline wafers. The wafers are heated for polysilicon deposition within the interior of a quartz tube (102) which is mounted so that the interior sidewalls are vertical and the tube opening is at the top of the furnace. A quartz boat (104) is adapted for carrying the wafers in a spaced apart relationship with a quartz rod (144) maintaining the wafers within the boat when it is suspended vertically from an elevator bar (128). The elevator bar moves the quartz boat vertically into the interior of the quartz tube (102) for heating without contact between the quartz boat and sidewalls of the quartz tube. The level of contamination is therefore less and the yield of certain integrated circuits much improved.
摘要翻译： 提供了一种炉（100），其有助于在单晶晶片上多晶硅沉积期间减少多晶硅和石英污染物。 在石英管（102）的内部加热晶片以进行多晶硅沉积，石英管（102）被安装成使得内侧壁是垂直的并且管开口位于炉的顶部。 石英舟（104）适于以与石英棒（144）间隔开的关系承载晶片，当晶片从电梯杆（128）垂直悬挂时，将晶片保持在船内。 电梯杆将石英舟垂直移动到石英管（102）的内部，用于加热，而不会在石英舟与石英管的侧壁之间接触。 因此污染水平较低，某些集成电路的产量大大提高。
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4.发明授权
公开(公告)号：US5990911A
公开(公告)日：1999-11-23
申请号：US970959
申请日：1997-11-14
申请人： Matthew R. Arrott , Robert D. Covey , Ching-Chi Billy Hsu , Tanvir B. Hassan , Jeffrey M. Kowalski , Brian P. Mathews
发明人： Matthew R. Arrott , Robert D. Covey , Ching-Chi Billy Hsu , Tanvir B. Hassan , Jeffrey M. Kowalski , Brian P. Mathews
CPC分类号： G06T15/405 , G06T1/00
摘要： The present invention discloses an apparatus, method, and article of manufacture for generating graphic images. In accordance with the present invention, an application program receives commands from a computer user via an input device and provides an output command stream to a plurality of renderer programs. The renderer programs selectively modify the output command stream and transmit the output command stream to a graphics peripheral device or to one or more of the other renderer programs.
摘要翻译： 本发明公开了一种用于生成图形图像的装置，方法和制品。 根据本发明，应用程序经由输入设备从计算机用户接收命令，并向多个渲染器程序提供输出命令流。 渲染器程序选择性地修改输出命令流并将输出命令流传输到图形外围设备或一个或多个其他渲染器程序。
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公开(公告)号：US5679168A
公开(公告)日：1997-10-21
申请号：US565177
申请日：1995-11-28
IPC分类号： H01L21/683 , H01L21/00 , H01L21/22 , H01L21/31 , H01L21/324 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67309 , H01L21/67109 , H01L21/67303
摘要： A thermal treatment boat having a plurality of annular, coaxial, spaced apart bands having substantially the same inner diameters. The bands are separated by a band spacing distance of from about 3.8 to 12.7 mm, each of the bands having a height, Height.sub.Band, in mm according to the equation: ##EQU1## wherein Height.sub.Band is always.gtoreq.wafer thickness; ColumnHeight is the total height of the treatment boat, mm; BandSpacing is the band spacing distance between adjacent bands, mm; and NumberBands is the total number of bands in the treatment boat. Preferably the NumberBands is from about 12 to about 100. Each band includes wafer support means for supporting a wafer therein at a position which is substantially centered between the upper edge surface and said lower edge surface thereof, the wafer support means in one embodiment including at least three inwardly extending projections. Each band is sized to provide a radial clearance between the outer edge of the wafer and the inner surface of the respective band within the range of from about 1.5 to 6.3 mm. In the process, the heat provided by the heater is sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of from 50.degree. C./min to 100.degree. C./min without causing mechanical damage due to induced stresses in the wafers.
摘要翻译： 一种具有多个具有基本相同内径的环形同轴的间隔开的带的热处理舟。 带的间隔距离约为3.8至12.7毫米，每个带的高度，高度（mm）以mm为单位，根据以下等式：其中HeightBand总是≥晶圆厚度; ColumnHeight是处理船的总高度，mm; BandSpacing是相邻带之间的带间距，mm; 而NumberBands是处理船的总数。 优选地，NumberBands为约12至约100.每个带包括晶片支撑装置，用于在基本上位于其上边缘表面和所述下边缘表面之间的位置处支撑晶片，晶片支撑装置在一个实施例中包括 至少三个向内延伸的投影。 每个带的尺寸设置成在晶片的外边缘和相应带的内表面之间提供在约1.5至6.3mm的范围内的径向间隙。 在此过程中，由加热器提供的热量足以将晶片的温度从21℃升高至1100℃，速率为50℃/分钟至100℃/分钟，而不引起 由于晶片中的应力引起的机械损伤。
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公开(公告)号：US5626680A
公开(公告)日：1997-05-06
申请号：US399108
申请日：1995-03-03
IPC分类号： H01L21/00 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67303 , H01L21/67109 , H01L21/67309
摘要： Process for treating multiple parallel wafers positioned in a heating zone surrounded by a heater emitting radiant heat. A space of from 0.5 to 2.55 cm is maintained between each wafer, and the outer portions of each wafer are shielded from radiant heat emitted by the heater by means of a circular heat shield positioned between the outer edge of the wafer and the heater. The circular heat shield has an upper edge and a bottom edge, and is positioned at a distance of less than 0.5 cm from the outer edge of the wafer. The wafer is positioned to be substantially centered between said upper edge and said bottom edge of its respective heat shield, and the circular heat shield has a height of from 0.35 to 0.95. The heat provided by the heater can be sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of 100.degree. C./min without causing thermal stress damage to the wafers. The thermal treatment apparatus comprises a combination of heating chamber surrounded by a heater and a thermal treatment boat as described above. Each wafer is positioned within a circular shield wall, and a distance of from 0.5 to 2.55 cm is maintained between adjacent wafers. The inner diameter of the circular shield wall is from 20.3 to 21.0 cm and the height thereof is from 0.35 to 0.95 cm. The inner diameter of the circular shield wall can be 3 mm greater than the outer diameter of said wafer.
摘要翻译： 用于处理位于由发射辐射热的加热器包围的加热区域中的多个平行晶片的处理。 在每个晶片之间保持0.5至2.55cm的空间，并且通过位于晶片的外边缘和加热器之间的圆形隔热屏蔽每个晶片的外部部分与由加热器发射的辐射热。 圆形隔热罩具有上边缘和下边缘，并且位于离晶片外缘小于0.5cm的距离处。 晶片被定位成基本上位于其各自的隔热罩的上边缘和所述底部边缘之间的中心，并且圆形隔热罩具有0.35至0.95的高度。 由加热器提供的热可以足以使晶片的温度从100℃/分钟升高到1100℃，而不会对晶片造成热应力损坏。 热处理装置包括如上所述的由加热器包围的加热室和热处理舟的组合。 每个晶片定位在圆形屏蔽壁内，相邻晶片之间保持0.5至2.55厘米的距离。 圆形屏蔽壁的内径为20.3〜21.0cm，高度为0.35〜0.95cm。 圆形屏蔽壁的内径可以比所述晶片的外径大3mm。
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公开(公告)号：US06900413B2
公开(公告)日：2005-05-31
申请号：US10261963
申请日：2002-09-30
IPC分类号： C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , F27B5/14 , F27B5/16 , F27D1/18 , F27D3/00 , H01L21/00
CPC分类号： C23C16/463 , C23C16/455 , C23C16/4584 , C30B25/10 , C30B25/14 , F27B5/14 , F27B2005/161 , F27D1/1858 , F27D2003/0075 , H01L21/67109
摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.
摘要翻译： 公开了一种用于晶片热处理的设备。 该装置包括具有热源的加热室。 冷却室位于加热室附近并且包括冷却源。 晶片保持器构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。 一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。
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公开(公告)号：US6005225A
公开(公告)日：1999-12-21
申请号：US827542
申请日：1997-03-28
申请人： Jeffrey M. Kowalski , Christopher T. Ratliff , Terry A. Koble, Jr. , Jon H. Pack , Michael H. Yang
发明人： Jeffrey M. Kowalski , Christopher T. Ratliff , Terry A. Koble, Jr. , Jon H. Pack , Michael H. Yang
CPC分类号： H01L21/67098
摘要： A vertical rapid heating furnace for treating semiconductor wafers comprising a hot wall reaction tube positioned within a cylindrical array of circular parallel heating elements substantially concentric therewith, each heating element being spaced from the hot wall reaction tube, each heating element comprising a coil of resistance heating conductor. The coiled resistance heating conductor can be a coil of resistance heating wire, the coil having an outer diameter of from 1 to 7 mm and supported in an annular heating element support. Each heating element support is dimensioned to support and accommodate the thermally expanded heating element supported therein at both the minimum and maximum furnace temperatures. Preferably, each annular heating element support is provided by an annular recess in the insulation surrounding the array of heating elements. The preferred vertical rapid heating and cooling furnace for treating semiconductor wafers comprises a hot wall reaction tube and a cylindrical array of circular parallel heating elements substantially concentric therewith and spaced therefrom to define a cooling gas passageway between said hot wall reaction tube and said cylindrical array of heating elements. The cooling gas passageway has lower and upper ends, the furnace has a cooling gas inlet opening in communication with said lower end, and a cooling gas exhaust outlet in communication with said upper end.
摘要翻译： 一种用于处理半导体晶片的垂直快速加热炉，其包括位于与其基本上同心的圆形平行加热元件的圆柱形阵列内的热壁反应管，每个加热元件与热壁反应管间隔开，每个加热元件包括电阻加热线圈 导体。 线圈电阻加热导体可以是电阻加热线的线圈，线圈的外径为1至7mm，并且支撑在环形加热元件支架中。 每个加热元件支撑件的尺寸被设计成在最小和最大炉温度下支撑和容纳支撑在其中的热膨胀的加热元件。 优选地，每个环形加热元件支撑件由围绕加热元件阵列的绝缘体中的环形凹部提供。 用于处理半导体晶片的优选的垂直快速加热和冷却炉包括热壁反应管和与其基本同心的圆形平行加热元件的圆柱形阵列，并与之隔开，以在所述热壁反应管和所述圆柱形阵列之间限定冷却气体通道 加热元件。 冷却气体通路具有下端和上端，炉具有与所述下端连通的冷却气体入口，以及与所述上端连通的冷却气体排出口。
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公开(公告)号：US20120246166A1
公开(公告)日：2012-09-27
申请号：US13071130
申请日：2011-03-24
IPC分类号： G06F17/30
CPC分类号： G06T17/00 , G06F17/30241 , G06F17/3028 , G06F2217/16 , G06T9/00 , G06T2210/56
摘要： A method, apparatus, system, article of manufacture, and computer readable medium provide the ability to create a point cloud indexed file. A grid (of cells that are divided into subcells) is mapped over points in a point cloud dataset. An occupancy value, that indicates whether a subcell contains a point, is computed for each subcell. A surface area contribution factor is computed for each cell and identifies a count of subcells that are occupied divided by a total number of subcells. The surface area contribution factor for each cell and points for each cell are written to the point cloud indexed file.
摘要翻译： 方法，装置，系统，制品和计算机可读介质提供创建点云索引文件的能力。 在点云数据集中的点上映射网格（被划分成子单元的单元格）。 为每个子单元计算占用值，表示子单元是否包含点。 为每个单元计算表面积贡献因子，并识别被占用的子单元的数量除以子单元的总数。 每个单元格的表面积贡献因子和每个单元格的点都写入点云索引文件。
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公开(公告)号：US06844528B2
公开(公告)日：2005-01-18
申请号：US10262215
申请日：2002-09-30
IPC分类号： C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , F27B5/14 , F27B5/16 , F27D1/18 , F27D3/00 , H01L21/00
CPC分类号： C23C16/463 , C23C16/455 , C23C16/4584 , C30B25/10 , C30B25/14 , F27B5/14 , F27B2005/161 , F27D1/1858 , F27D2003/0075 , H01L21/67109
摘要： An apparatus for heat treatment of a wafer. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.
摘要翻译： 一种用于晶片热处理的设备。 该装置包括具有热源的加热室。 冷却室位于加热室附近并且包括冷却源。 晶片保持器构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。 一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。
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