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    Carbon containing sputter target alloy compositions
    3.
    发明申请
    Carbon containing sputter target alloy compositions 审中-公开
    含碳溅射靶合金组成

    公开(公告)号：US20060110626A1

    公开(公告)日：2006-05-25

    申请号：US10995112

    申请日：2004-11-24

    申请人： Abdelouahab Ziani ,  Michael Lathrop ,  Francois Dary

    发明人： Abdelouahab Ziani ,  Michael Lathrop ,  Francois Dary

    IPC分类号： G11B5/66 ,  C23C14/00

    CPC分类号： C22C27/06 ,  B32B15/01 ,  B32B15/017 ,  C23C14/14 ,  C23C14/3414 ,  G11B5/7325 ,  G11B5/8404 ,  G11B5/851 ,  H01F10/005 ,  H01F41/183

    摘要： The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr—C, Cr—M—C or Cr—M1—M2—C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy.

    摘要翻译： 本发明提供溅射靶材料。 溅射靶材料包括包含Cr-C，Cr-MC或Cr-M 1 -M 2 -C-的合金体系，其中C包含至少0.5和至多 为20原子％; M包含至少0.5原子％至多20原子％，并且是选自Ti，V，Y，Zr，Nb，Mo，Hf，Ta和W的元素; M 1至少包含0.5和20原子百分比，并且是选自Ti，V，Zr，Nb，Mo，Hf，Ta和W的元素，M < SUB> 2 包含至少0.5和高达10原子％，并且是选自Li，Mg，Al，Sc，Mn，Y和Te的元素。 还提供了包括基底和包括本发明的溅射靶材料的至少底层的磁记录介质。 进一步提供制造溅射靶材料的方法。 该方法可以使用包括元素组合的粉末材料可以包括铬合金，含碳化物或含碳的母合金。