公开(公告)号：US4914495A

公开(公告)日：1990-04-03

申请号：US804711

申请日：1985-12-05

Applicant: Paul R. Norton ,  Michael Moroz ,  Carol S. Talley

Inventor： Paul R. Norton ,  Michael Moroz ,  Carol S. Talley

IPC: H01L31/0296 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1832 ,  H01L31/02966 ,  H01L31/1032 ,  H01L31/18

Abstract: Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductive material that includes a region of first conductivity type and a region of second conductivity type where the first region overlies and substantially covers the top and sides of the region of second conductivity type and where the junction between the first and second regions creates a depletion layer that separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.

Abstract translation: 产生接近理论最大检测率的检测率的光电检测器包括承载半导体材料体的电绝缘基板，其包括第一导电类型的区域和第二导电类型的区域，其中第一区域覆盖并基本上覆盖 第二导电类型的区域，并且其中第一和第二区域之间的结形成了在第一导电类型的区域中将第二导电类型的区域中的少数载流子与多数载流子分离的耗尽层。 这些光电检测器产生高检测率，其中入射到检测器上的辐射波长在约1至约25微米或更大的范围内，特别是在低背景条件下。

公开(公告)号：US5004698A

公开(公告)日：1991-04-02

申请号：US464840

申请日：1990-01-16

Applicant: Paul R. Norton ,  Michael Moroz ,  Carol S. Talley

Inventor： Paul R. Norton ,  Michael Moroz ,  Carol S. Talley

IPC: H01L31/0296 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1032 ,  H01L31/02966 ,  H01L31/18 ,  H01L31/1832

Abstract: Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductive material that includes a region of first conductivity type and a region of second conductivity type where the first region overlies and substantially covers the top and sides of the region of second conductivity type and where the junction between the first and second regions creates a depletion layer that separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.

Abstract translation: 产生接近理论最大检测率的检测率的光电检测器包括承载半导体材料体的电绝缘基板，其包括第一导电类型的区域和第二导电类型的区域，其中第一区域覆盖并基本上覆盖 第二导电类型的区域，并且其中第一和第二区域之间的结形成了在第一导电类型的区域中将第二导电类型的区域中的少数载流子与多数载流子分离的耗尽层。 这些光电检测器产生高检测率，其中入射到检测器上的辐射波长在约1至约25微米或更大的范围内，特别是在低背景条件下。

公开(公告)号：US06324040B1

公开(公告)日：2001-11-27

申请号：US09416322

申请日：1999-10-12

Applicant: Peter Saladin ,  Michael Moroz

Inventor： Peter Saladin ,  Michael Moroz

IPC: H02H300

CPC classification number: F02D41/221 ,  F02D2041/2031 ,  F02D2041/2051 ,  F02D2041/2089 ,  H02H3/12 ,  Y02T10/40

Abstract: A sensor circuit (10) device for detecting an open circuit to an electronic component (20) is disclosed. The sensor circuit (10) includes a detector circuit (12) operatively coupled to the electronic component (20), with the electronic component (20) drawing a known current and with the detector circuit (12) including an energy storage component (24). A charging circuit (14) is arranged to charge the energy storage component (24), and a processing system (16) is operatively coupled to the detector circuit (12). The processing system (16) is arranged to monitor the voltage across the energy storage component, and the processing system determines the fault status indicative of an actual current drawn by the electronic component.

Abstract translation: 公开了一种用于检测对电子部件（20）的开路的传感器电路（10）装置。 传感器电路（10）包括可操作地耦合到电子部件（20）的检测器电路（12），电子部件（20）绘制已知电流，并且检测器电路（12）包括能量存储部件（24） 。 充电电路（14）被布置成对能量存储组件（24）充电，并且处理系统（16）可操作地耦合到检测器电路（12）。 处理系统（16）被布置成监视能量存储部件两端的电压，并且处理系统确定指示由电子部件绘制的实际电流的故障状态。