公开(公告)号：US5041393A

公开(公告)日：1991-08-20

申请号：US290932

申请日：1988-12-28

申请人： Richard E. Ahrens ,  Albert G. Baca ,  Randolph H. Burton ,  Michael P. Iannuzzi ,  Alex Lahav ,  Shin-Shem Pei ,  Claude L. Reynolds, Jr. ,  Thi-Hong-Ha Vuong

发明人： Richard E. Ahrens ,  Albert G. Baca ,  Randolph H. Burton ,  Michael P. Iannuzzi ,  Alex Lahav ,  Shin-Shem Pei ,  Claude L. Reynolds, Jr. ,  Thi-Hong-Ha Vuong

IPC分类号： H01L29/80 ,  H01L21/20 ,  H01L21/338 ,  H01L21/76 ,  H01L21/8252 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01L21/7605 ,  H01L21/8252 ,  Y10S148/072

摘要： A process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs), a desired wafer structure for SDHT fabrication and a method for isolating SDHTs on the wafer are disclosed herein. The wafer has epitaxial layers grown on a substrate. The layers are: a buffer layer of GaAs, a first spacer layer of AlGaAs, a donor layer of AlGaAs, a second spacer layer of AlGaAs, a first cap layer of GaAs, an etch-stop layer of AlGaAs and a second cap layer of GaAs. A protective layer of AlGaAs may then be grown on the second cap layer to protect the second cap layer from contamination or damage. Also a superlattice may first be grown on the substrate.This invention was made with Government support under contract No. F29601-87-R-0202 awarded by the Defense Advanced Research Projects Agency, and under contract No. F33615-84-C-1570 awarded by the Air Force Wright Aeronautical Laboratories. The Government has certain rights in this invention.