利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.008 秒)

    Manufacturing a semiconductor device with isolated circuit-element formation layers of different thicknesses
    1.
    发明授权
    Manufacturing a semiconductor device with isolated circuit-element formation layers of different thicknesses 有权
    制造具有不同厚度的隔离电路元件形成层的半导体器件

    公开(公告)号：US06387741B1

    公开(公告)日：2002-05-14

    申请号：US09762056

    申请日：2001-02-01

    申请人： Michihiro Kawano

    发明人： Michihiro Kawano

    IPC分类号： H01L2184

    CPC分类号： H01L21/84 ,  H01L21/76264 ,  H01L21/76281 ,  H01L27/1203

    摘要： Silicon layers 2a, 2b comprised of different thicknesses are formed concurrently so as to be isolated from each other while a silicon oxide layer 1 serving as a foundation layer is controlled to be free from hollows by implanting ions only into a field silicon oxide layer 5a comprised of a thick film thickness among field silicon oxide layers 5a, 5b to be used for separating circuit elements, and thereby altering etching rates of the field silicon oxide layers 5a, 5b.

    摘要翻译： 同时形成由不同厚度组成的硅层2a，2b，以便通过将离子注入仅包含在氧化硅层5a中的场氧化物层5a中，而将用作基础层的氧化硅层1控制为不含空洞 在用于分离电路元件的场氧化硅层5a，5b之间具有厚膜厚度，从而改变场氧化硅层5a，5b的蚀刻速率。