公开(公告)号：US5204166A

公开(公告)日：1993-04-20

申请号：US659682

申请日：1991-02-25

申请人： Osamu Ito ,  Tadamichi Asai ,  Toshio Ogawa ,  Noritaka Kamimura ,  Yoshishige Endou ,  Takao Kobayashi ,  Hiromi Isomae ,  Masaki Kamiakutsu ,  Michio Otani ,  Katsuo Ebisawa

发明人： Osamu Ito ,  Tadamichi Asai ,  Toshio Ogawa ,  Noritaka Kamimura ,  Yoshishige Endou ,  Takao Kobayashi ,  Hiromi Isomae ,  Masaki Kamiakutsu ,  Michio Otani ,  Katsuo Ebisawa

IPC分类号： H01C17/06 ,  H01C7/00 ,  H01C17/065 ,  H01L27/01 ,  H05K1/16

CPC分类号： H01L27/013 ,  H01C17/06553 ,  H01C17/06566 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/25 ,  Y10T428/256

摘要： The present invention relates to a thick film resistor material which is suitable especially for thick film hybrid IC having conductor, resistor, semiconductor element and the like in which Cu is used as the conductor and furthermore, a thick film resistor composition which can be fired in a reducing atmosphere. The present invention further relates to a thick film hybrid IC using the thick film resistor composition as a resistor and a method for making it.

摘要翻译： 本发明涉及一种厚膜电阻材料，其特别适用于其中使用Cu作为导体的导体，电阻器，半导体元件等的厚膜混合IC，此外，还可以在 减少气氛。 本发明还涉及使用厚膜电阻器组合物作为电阻器的厚膜混合IC及其制造方法。