公开(公告)号：US20120090381A1

公开(公告)日：2012-04-19

申请号：US13263132

申请日：2009-04-06

申请人： Mike Andersson

发明人： Mike Andersson

IPC分类号： G01N27/414

CPC分类号： G01N27/129 ,  G01N27/4141 ,  G01N33/0059

摘要： A field effect gas sensor (1) for detection of at least one non-hydrogen containing substance in a gas comprising hydrogen or hydrogen-containing substances. The field effect gas sensor comprises a semiconductor layer (2,3) having a surface, at least one ohmic contact (8) contacting the semiconductor (3), a first electron insulating layer (7) covering at least a part of the surface of the semiconductor layer, a second insulating layer (11) comprising a material substantially chemically inert to hydrogen or hydrogen-containing substances, the second insulating layer contacting at least one of the first electron insulating layer (7) and the semiconductor layer (3), at least one electrical contact (12) contacting the second insulating material (11) and comprising a conducting, semi-conducting and/or ion conducting layer. The field effect gas sensor is configured so interaction of the at least one non-hydrogen containing substance with at least part of the at least one electrical contact affects the work function of the conducting, semi-conducting and/or ion conducting layer (12) and/or the electric field in the semiconductor layer (3) in such way that the current-voltage (I-V) or the capacitance-voltage (C-V) characteristics of said field effect gas sensor are changed, wherein the change in I-V or C-V characteristics provide information about the presence of said at least one non-hydrogen containing substance in said gas. Use of the field effect gas sensor for EGR (Exhaust Gas Recirculation) applications. Use of a material substantially chemically inert to hydrogen in a field effect gas sensor.

摘要翻译： 一种用于在包含氢或含氢物质的气体中检测至少一种不含氢物质的场效应气体传感器（1）。 场效应气体传感器包括具有表面的半导体层（2,3），与半导体（3）接触的至少一个欧姆接触（8），覆盖至少一部分表面的第一电子绝缘层（7） 所述半导体层，包含对氢或含氢物质基本上化学惰性的材料的第二绝缘层（11），所述第二绝缘层与所述第一电子绝缘层（7）和所述半导体层（3）中的至少一个接触， 至少一个接触第二绝缘材料（11）并且包括导电，半导电和/或离子传导层的电触点（12）。 场效应气体传感器被配置为使得至少一种非含氢物质与至少一个电接触的至少一部分的相互作用影响导电，半导电和/或离子传导层（12）的功函数， 和/或半导体层（3）中的电场使得所述场效应气体传感器的电流 - 电压（IV）或电容 - 电压（CV）特性改变，其中IV或CV特性的变化 提供关于在所述气体中存在所述至少一种不含氢物质的信息。 使用场效应气体传感器进行EGR（排气再循环）应用。 在场效应气体传感器中使用基本上对化学惰性的物质。

公开(公告)号：US09157888B2

公开(公告)日：2015-10-13

申请号：US14115818

申请日：2011-05-05

申请人： Mike Andersson ,  Lars Hultman ,  Anita Lloyd Spetz ,  Ruth Pearce ,  Rositsa Yakimova

发明人： Mike Andersson ,  Lars Hultman ,  Anita Lloyd Spetz ,  Ruth Pearce ,  Rositsa Yakimova

IPC分类号： H01L29/06 ,  G01N27/414

CPC分类号： G01N27/4146 ,  G01N27/4141 ,  H01L29/0673

摘要： A field effect transistor (20) for chemical sensing, comprising an electrically conducting and chemically sensitive channel (2) extending between drain (5) and source (6) electrodes. A gate electrode (7) is separated from the channel (2) by a gap (10) through which a chemical to be sensed can reach the channel (2) which comprises a continuous monocrystalline graphene layer (2a) arranged on an electrically insulating graphene layer substrate (1). The graphene layer (2a) extends between and is electrically connected to the source electrode (5) and the drain electrode (6). The substrate supports the graphene layer, allowing it to stay 2-dimensional and continuous, and enables it to be provided on a well defined surface, and be produced and added to the transistor as a separate part. This is beneficial for reproducibility and reduces the risk of damage to the graphene layer during production and after. Low detection limits with low variability between individual transistors are also enabled. There is also provided a chemical sensor (30) using the transistor (20) and a method for providing the transistor (20).

摘要翻译： 一种用于化学感测的场效应晶体管（20），包括在漏极（5）和源极（6）之间延伸的导电和化学敏感的通道（2）。 栅电极（7）通过间隙（10）与通道（2）分开，待检测的化学物质可通过该间隙（10）到达通道（2），通道（2）包括布置在电绝缘石墨烯上的连续单晶石墨烯层（2a） 层基板（1）。 石墨烯层（2a）在源电极（5）和漏电极（6）之间延伸并电连接。 衬底支撑石墨烯层，使其保持2维和连续，并使其能够在良好限定的表面上提供，并作为单独部分产生并添加到晶体管。 这有利于重现性，并降低在生产和之后石墨烯层损坏的风险。 单个晶体管之间的低可变性的低检测限也可实现。 还提供了使用晶体管（20）的化学传感器（30）和用于提供晶体管（20）的方法。