Field effect transistor for chemical sensing using graphene, chemical sensor using the transistor and method for producing the transistor
    1.
    发明授权
    Field effect transistor for chemical sensing using graphene, chemical sensor using the transistor and method for producing the transistor 有权
    用于使用石墨烯的化学感测的场效应晶体管,使用晶体管的化学传感器和用于制造晶体管的方法

    公开(公告)号:US09157888B2

    公开(公告)日:2015-10-13

    申请号:US14115818

    申请日:2011-05-05

    IPC分类号: H01L29/06 G01N27/414

    摘要: A field effect transistor (20) for chemical sensing, comprising an electrically conducting and chemically sensitive channel (2) extending between drain (5) and source (6) electrodes. A gate electrode (7) is separated from the channel (2) by a gap (10) through which a chemical to be sensed can reach the channel (2) which comprises a continuous monocrystalline graphene layer (2a) arranged on an electrically insulating graphene layer substrate (1). The graphene layer (2a) extends between and is electrically connected to the source electrode (5) and the drain electrode (6). The substrate supports the graphene layer, allowing it to stay 2-dimensional and continuous, and enables it to be provided on a well defined surface, and be produced and added to the transistor as a separate part. This is beneficial for reproducibility and reduces the risk of damage to the graphene layer during production and after. Low detection limits with low variability between individual transistors are also enabled. There is also provided a chemical sensor (30) using the transistor (20) and a method for providing the transistor (20).

    摘要翻译: 一种用于化学感测的场效应晶体管(20),包括在漏极(5)和源极(6)之间延伸的导电和化学敏感的通道(2)。 栅电极(7)通过间隙(10)与通道(2)分开,待检测的化学物质可通过该间隙(10)到达通道(2),通道(2)包括布置在电绝缘石墨烯上的连续单晶石墨烯层(2a) 层基板(1)。 石墨烯层(2a)在源电极(5)和漏电极(6)之间延伸并电连接。 衬底支撑石墨烯层,使其保持2维和连续,并使其能够在良好限定的表面上提供,并作为单独部分产生并添加到晶体管。 这有利于重现性,并降低在生产和之后石墨烯层损坏的风险。 单个晶体管之间的低可变性的低检测限也可实现。 还提供了使用晶体管(20)的化学传感器(30)和用于提供晶体管(20)的方法。