公开(公告)号：US07470941B2

公开(公告)日：2008-12-30

申请号：US10313374

申请日：2002-12-06

申请人： Miroslav Micovic ,  Mike Antcliffe ,  Tahir Hussain ,  Paul Hashimoto

发明人： Miroslav Micovic ,  Mike Antcliffe ,  Tahir Hussain ,  Paul Hashimoto

IPC分类号： H01L31/0328

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/7787

摘要： A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.

摘要翻译： 提出了一种用于制造异质结场效应晶体管（HFET）和一系列HFET层结构的方法。 在该方法中，执行将HFET半导体结构沉积到衬底上的步骤。 接下来，沉积光致抗蚀剂材料。 对应于源极和漏极焊盘对，去除部分光致抗蚀剂材料。 金属层沉积在结构上，形成源极焊盘和漏极焊盘对。 去除光致抗蚀剂材料，将其暴露于不同于源极和漏极焊盘对的区域中。 每个源极和漏极焊盘对具有相应的曝光区域。 该结构进行退火，并且器件是电隔离的。 蚀刻每个器件的暴露面积以形成栅极凹部，并且在凹部中形成栅极结构。 还提出了用于GaN / AlGaN HFET的半导体层结构。

公开(公告)号：US07598131B1

公开(公告)日：2009-10-06

申请号：US12290921

申请日：2008-11-05

申请人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Mike Antcliffe

发明人： Miroslav Micovic ,  Tahir Hussain ,  Paul Hashimoto ,  Mike Antcliffe

IPC分类号： H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/7787

摘要： A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.

摘要翻译： 提出了一种用于制造异质结场效应晶体管（HFET）和一系列HFET层结构的方法。 在该方法中，执行将HFET半导体结构沉积到衬底上的步骤。 接下来，沉积光致抗蚀剂材料。 对应于源极和漏极焊盘对，去除部分光致抗蚀剂材料。 金属层沉积在结构上，形成源极焊盘和漏极焊盘对。 去除光致抗蚀剂材料，将其暴露于不同于源极和漏极焊盘对的区域中。 每个源极和漏极焊盘对具有相应的曝光区域。 该结构进行退火，并且器件是电隔离的。 蚀刻每个器件的暴露面积以形成栅极凹部，并且在凹部中形成栅极结构。 还提出了用于GaN / AlGaN HFET的半导体层结构。